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1.发明授权Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer 有权用于形成二氧化硅基绝缘层的组合物，二氧化硅基绝缘层和二氧化硅基绝缘层的制造方法公开(公告)号：US09574108B2
公开(公告)日：2017-02-21
申请号：US14259845
申请日：2014-04-23
Applicant: Eun-Su Park , Taek-Soo Kwak , Yoong-Hee Na , Hyun-Ji Song , Han-Song Lee , Seung-Hee Hong
Inventor： Eun-Su Park , Taek-Soo Kwak , Yoong-Hee Na , Hyun-Ji Song , Han-Song Lee , Seung-Hee Hong
IPC: C08L83/05 , B05D1/00 , C09D183/04 , C08L83/02 , H01L21/02
CPC classification number: C09D183/04 , C08L83/02 , H01L21/02126 , H01L21/02216 , H01L21/02282
Abstract: A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1:
Abstract translation: 用于形成二氧化硅基绝缘层的组合物，二氧化硅系绝缘层，以及二氧化硅系绝缘层的制造方法，所述组合物含有溶剂; 和含有下述化学式1表示的结构单元的有机硅烷缩聚产物：
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2.发明授权Resist underlayer composition and process of producing integrated circuit devices using the same 有权抗蚀底层组合物和使用其制造集成电路器件的工艺公开(公告)号：US08962747B2
公开(公告)日：2015-02-24
申请号：US13539971
申请日：2012-07-02
Applicant: Mi-Young Kim , Woo-Jin Lee , Kwen-Woo Han , Han-Song Lee , Sang-Kyun Kim , Jong-Seob Kim
Inventor： Mi-Young Kim , Woo-Jin Lee , Kwen-Woo Han , Han-Song Lee , Sang-Kyun Kim , Jong-Seob Kim
IPC: C08L83/00 , H01L21/033 , G03F7/075 , G03F7/09 , H01L21/02
CPC classification number: H01L21/0332 , C08G77/80 , C09D183/04 , G03F7/0752 , G03F7/091 , H01L21/02126 , H01L21/02216 , H01L21/02282
Abstract: A resist underlayer composition includes a solvent, and an organosilane condensation polymerization product of: a compound represented by the following Chemical Formula 1, a compound represented by the following Chemical Formula 2, and a compound represented by the following Chemical Formula 3, [R1O]3Si—X [Chemical Formula 1] [R2O]3Si—R3 [Chemical Formula 2] [R4O]3Si—Si[OR5]3. [Chemical Formula 3]
Abstract translation: 抗蚀剂底层组合物包括溶剂和由以下化学式1表示的化合物，由以下化学式2表示的化合物和由以下化学式3表示的化合物的有机硅烷缩聚产物[R1O] 3Si-X [化学式1] [R2O] 3Si-R3 [化学式2] [R4O] 3Si-Si [OR5] 3。 [化学式3]
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3.发明授权Resist underlayer composition and process of producing integrated circuit devices using same 有权抗蚀底层组成和使用其制造集成电路器件的工艺公开(公告)号：US08841218B2
公开(公告)日：2014-09-23
申请号：US13571751
申请日：2012-08-10
Applicant: Kwen-Woo Han , Mi-Young Kim , Woo-Jin Lee , Han-Song Lee , Seung-Hee Hong , Sang-Kyun Kim , Jin-Wook Lee
Inventor： Kwen-Woo Han , Mi-Young Kim , Woo-Jin Lee , Han-Song Lee , Seung-Hee Hong , Sang-Kyun Kim , Jin-Wook Lee
IPC: H01L21/311 , C08L83/06
CPC classification number: C08L83/06 , G03F7/0752 , G03F7/091 , G03F7/094
Abstract: A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product of hydrolyzed products produced from a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and a compound represented by Chemical Formula 3.
Abstract translation: 包含溶剂的抗蚀剂底层组合物和由化学式1表示的化合物，由化学式2表示的化合物和由化学式3表示的化合物制备的水解产物的有机硅烷缩聚产物。
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4.发明授权公开(公告)号：US09312122B2
公开(公告)日：2016-04-12
申请号：US14090003
申请日：2013-11-26
Applicant: Jin-Hee Bae , Han-Song Lee , Wan-Hee Lim , Go-Un Kim , Taek-Soo Kwak , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Youn-Jin Cho , Kwen-Woo Han , Byeong-Gyu Hwang
Inventor： Jin-Hee Bae , Han-Song Lee , Wan-Hee Lim , Go-Un Kim , Taek-Soo Kwak , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Youn-Jin Cho , Kwen-Woo Han , Byeong-Gyu Hwang
CPC classification number: H01L21/0206 , C08G77/54 , C08G77/62 , C09D183/14 , C09D183/16 , C11D7/266 , C11D7/5022 , C11D11/0047 , H01L21/02087 , H01L21/0209 , H01L21/02164 , H01L21/02214 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L27/1085 , H01L28/40
Abstract: A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:
Abstract translation: 一种用于绝缘层的冲洗液，所述漂洗液包括由以下化学式1表示的溶剂：
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5.发明申请公开(公告)号：US20140315367A1
公开(公告)日：2014-10-23
申请号：US14090003
申请日：2013-11-26
Applicant: Jin-Hee BAE , Han-Song LEE , Wan-Hee LIM , Go-Un KIM , Taek-Soo KWAK , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Youn-Jin CHO , Kwen-Woo HAN , Byeong-Gyu HWANG
Inventor： Jin-Hee BAE , Han-Song LEE , Wan-Hee LIM , Go-Un KIM , Taek-Soo KWAK , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Youn-Jin CHO , Kwen-Woo HAN , Byeong-Gyu HWANG
IPC: H01L21/02 , H01L27/108
CPC classification number: H01L21/0206 , C08G77/54 , C08G77/62 , C09D183/14 , C09D183/16 , C11D7/266 , C11D7/5022 , C11D11/0047 , H01L21/02087 , H01L21/0209 , H01L21/02164 , H01L21/02214 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L27/1085 , H01L28/40
Abstract: A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:
Abstract translation: 一种用于绝缘层的冲洗液，所述漂洗液包括由以下化学式1表示的溶剂：
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Patent Agency Ranking
6.发明申请PROCESS OF PREPARING A GAP FILLER AGENT, A GAP FILLER AGENT PREPARED USING SAME, AND A METHOD FOR MANUFACTURING SEMICONDUCTOR CAPACITOR USING THE GAP FILLER AGENT 有权制备GAP填料剂的方法，使用其制备的GAP填料剂以及使用GAP填料剂制造半导体电容器的方法公开(公告)号：US20140187017A1
公开(公告)日：2014-07-03
申请号：US14144738
申请日：2013-12-31
Applicant: Jin-Hee BAE , Han-Song LEE , Taek-Soo KWAK , Go-Un KIM , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Sang-Hak LIM , Wan-Hee LIM , Seung-Hee HONG , Byeong-Gyu HWANG
Inventor： Jin-Hee BAE , Han-Song LEE , Taek-Soo KWAK , Go-Un KIM , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Sang-Hak LIM , Wan-Hee LIM , Seung-Hee HONG , Byeong-Gyu HWANG
IPC: H01L49/02
CPC classification number: H01L28/92 , C08G77/00 , C08G77/62 , C09D183/16 , H01L21/02222 , H01L21/02282 , H01L21/02326
Abstract: A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.
Abstract translation: 制备间隙填充剂的方法包括向碱性溶剂中加入卤代硅烷，并且向碱性溶剂和卤代硅烷中添加约50至约70重量份的氨，基于100重量份的卤代硅烷 以约1g / hr至约15g / hr的速率。
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7.发明授权Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer 有权用于形成二氧化硅基绝缘层的组合物，二氧化硅基绝缘层和二氧化硅基绝缘层的制造方法公开(公告)号：US09362030B2
公开(公告)日：2016-06-07
申请号：US14268193
申请日：2014-05-02
Applicant: Eun-Su Park , Taek-Soo Kwak , Yoong-Hee Na , Hyun-Ji Song , Han-Song Lee , Seung-Hee Hong
Inventor： Eun-Su Park , Taek-Soo Kwak , Yoong-Hee Na , Hyun-Ji Song , Han-Song Lee , Seung-Hee Hong
IPC: H01B3/00 , H01B3/46 , H01B17/00 , H01B17/60 , C08G77/44 , H01B19/02 , H01B3/18 , H01B19/04 , C08G77/54 , C09D183/14
Abstract: A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product, the organosilane-based condensation polymerization product being prepared from a compound mixture, the compound mixture including compounds represented by the following Chemical Formulae 1 and 2: (R1)3SiXSi(R1)3 [Chemical Formula 1] R2e(Si)OR34-e. [Chemical Formula 2]
Abstract translation: 用于形成二氧化硅基绝缘层的组合物，二氧化硅系绝缘层，以及二氧化硅系绝缘层的制造方法，所述组合物含有溶剂; 和由有机硅烷类缩聚产物，由化合物混合物制备的有机硅烷缩合产物，该化合物混合物包括由以下化学式1和2表示的化合物：（R1）3SiXSi（R1）3 [化学式1 ] R2e（Si）OR34-e。 [化学式2]
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8.发明申请COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, SILICA BASED INSULATING LAYER AND METHOD FOR MANUFACTURING SILICA BASED INSULATING LAYER 有权用于形成二氧化硅基绝缘层的组合物，基于二氧化硅的绝缘层和用于制造基于二氧化硅的绝缘层的方法公开(公告)号：US20150044883A1
公开(公告)日：2015-02-12
申请号：US14259845
申请日：2014-04-23
Applicant: Eun-Su PARK , Taek-Soo KWAK , Yoong-Hee NA , Hyun-Ji SONG , Han-Song LEE , Seung-Hee HONG
Inventor： Eun-Su PARK , Taek-Soo KWAK , Yoong-Hee NA , Hyun-Ji SONG , Han-Song LEE , Seung-Hee HONG
IPC: C09D183/04 , H01L21/02
CPC classification number: C09D183/04 , C08L83/02 , H01L21/02126 , H01L21/02216 , H01L21/02282
Abstract: A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1:
Abstract translation: 用于形成二氧化硅基绝缘层的组合物，二氧化硅系绝缘层，以及二氧化硅系绝缘层的制造方法，所述组合物含有溶剂; 和含有下述化学式1表示的结构单元的有机硅烷缩聚产物：
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9.发明申请RESIST UNDERLAYER COMPOSITION AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING SAME 有权使用相同的底漆组合物和制造集成电路装置的方法公开(公告)号：US20130037921A1
公开(公告)日：2013-02-14
申请号：US13571751
申请日：2012-08-10
Applicant: Kwen-Woo HAN , Mi-Young KIM , Woo-Jin LEE , Han-Song LEE , Seung-Hee HONG , Sang-Kyun KIM , Jin-Wook LEE
Inventor： Kwen-Woo HAN , Mi-Young KIM , Woo-Jin LEE , Han-Song LEE , Seung-Hee HONG , Sang-Kyun KIM , Jin-Wook LEE
CPC classification number: C08L83/06 , G03F7/0752 , G03F7/091 , G03F7/094
Abstract: A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product of hydrolyzed products produced from a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and a compound represented by Chemical Formula 3.
Abstract translation: 包含溶剂的抗蚀剂底层组合物和由化学式1表示的化合物，由化学式2表示的化合物和由化学式3表示的化合物制备的水解产物的有机硅烷缩聚产物。
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10.发明申请RESIST UNDERLAYER COMPOSITION AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THE SAME 有权使用相同的底层组合物和制造集成电路装置的方法公开(公告)号：US20120270981A1
公开(公告)日：2012-10-25
申请号：US13539971
申请日：2012-07-02
Applicant: Mi-Young KIM , Woo-Jin LEE , Kwen-Woo HAN , Han-Song LEE , Sang-Kyun KIM , Jong-Seob KIM
Inventor： Mi-Young KIM , Woo-Jin LEE , Kwen-Woo HAN , Han-Song LEE , Sang-Kyun KIM , Jong-Seob KIM
CPC classification number: H01L21/0332 , C08G77/80 , C09D183/04 , G03F7/0752 , G03F7/091 , H01L21/02126 , H01L21/02216 , H01L21/02282
Abstract: A resist underlayer composition includes a solvent, and an organosilane condensation polymerization product of: a compound represented by the following Chemical Formula 1, a compound represented by the following Chemical Formula 2, and a compound represented by the following Chemical Formula 3, [R1O]3Si—X [Chemical Formula 1] [R2O]3Si—R3 [Chemical Formula 2] [R4O]3Si—Si[OR5]3. [Chemical Formula 3]
Abstract translation: 抗蚀剂底层组合物包括溶剂和由以下化学式1表示的化合物，由以下化学式2表示的化合物和由以下化学式3表示的化合物的有机硅烷缩聚产物[R1O] 3Si-X [化学式1] [R2O] 3Si-R3 [化学式2] [R4O] 3Si-Si [OR5] 3。 [化学式3]
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