公开(公告)号：EP2897159B1

公开(公告)日：2017-06-14

申请号：EP12884698.7

申请日：2012-12-31

Applicant: Jiangsu R&D Center For Internet Of Things ,  The Institute of Microelectronics of Chinese Academy of Sciences ,  Jiangsu Cas-IGBT Technology Co., Ltd

Inventor： ZHU, Yangjun ,  WANG, Bo ,  LU, Shuojin ,  HU, Aibin

IPC: H01L21/328 ,  H01L21/331 ,  H01L29/739 ,  H01L29/66 ,  H01L29/06 ,  H01L29/165

CPC classification number: H01L29/66348 ,  H01L29/0634 ,  H01L29/165 ,  H01L29/7397

公开(公告)号：EP2897159A1

公开(公告)日：2015-07-22

申请号：EP12884698.7

申请日：2012-12-31

Applicant: Jiangsu R&D Center For Internet Of Things ,  The Institute of Microelectronics of Chinese Academy of Sciences ,  Jiangsu Cas-IGBT Technology Co., Ltd

Inventor： ZHU, Yangjun ,  WANG, Bo ,  LU, Shuojin ,  HU, Aibin

IPC: H01L21/328 ,  H01L21/331 ,  H01L29/73

CPC classification number: H01L29/66348 ,  H01L29/0634 ,  H01L29/165 ,  H01L29/7397

Abstract: A method for manufacturing a high-voltage super junction insulated gate bipolar transistor (IGBT), including the following steps: respectively etching trenches on N type and P type substrates; respectively filling the trenches with epitaxy P type and N type monocrystalline silicon, and flattening and thinning the facades after filling; polishing the facades of silicon wafers, and treating the silicon wafers through acid; accurately aligning the two treated silicon wafers and bonding; thinning the back surface of the bonded silicon wafer to remove an N layer to expose an N and P alternately distributed layout; repeating step 3 and step 4 to bond for the second time; fabricating the facade of the device, and fabricating a back surface collector layer by depositing a P type strain SiGe layer; fabricating a metal layer on the back surface by using metal Al/Ti/Ni/Ag. The super junction IGBT manufactured by a twice bonding method has a larger depth-width ratio, thus being suitable for high-voltage devices.

Abstract translation: 一种用于制造高压超结绝缘栅双极晶体管（IGBT）的方法，包括以下步骤：分别蚀刻N型和P型衬底上的沟槽; 分别用外延P型和N型单晶硅填充沟槽，并在填充后使外墙变平和变薄; 抛光硅晶片的立面，并通过酸处理硅晶片; 准确对准两个经处理的硅晶片并进行接合; 使接合的硅晶片的背面变薄以除去N层以露出N和P交替分布的布局; 重复步骤3和步骤4第二次结合; 制造器件的立面，并通过沉积P型应变SiGe层制造后表面集电极层; 通过使用金属Al / Ti / Ni / Ag在后表面上制造金属层。 通过两次接合方法制造的超结IGBT具有较大的深度比，因此适用于高压器件。

公开(公告)号：EP2930739A1

公开(公告)日：2015-10-14

申请号：EP12889660.2

申请日：2012-12-06

Applicant: Institute Of Microelectronics, Chinese Academy Of Sciences ,  Jiangsu Cas-IGBT Technology Co., Ltd ,  Jiangsu R&D Center For Internet Of Things

Inventor： ZHANG, Wenliang ,  ZHU, Yangjun ,  LU, Shuojin ,  TIAN, Xiaoli ,  CHU, Weili

IPC: H01L21/00 ,  H01L21/336 ,  H01L21/261 ,  H01L21/263

CPC classification number: H01L21/261 ,  H01L21/263 ,  H01L29/0634 ,  H01L29/7395 ,  H01L29/7802

Abstract: Provided is a super-junction manufacturing method, comprising: providing a lightly doped substrate (S11); employing a transmutation doping process to form a P-type heavily doped region (S12) or an N-type heavily doped region (S13); and performing annealing treatment (S14); or providing a first-type heavily doped substrate; employing the transmutation doping process to form a second-type heavily doped region; and performing annealing treatment. Thereby, the manufacturing process is simplified, and production costs are reduced.

Abstract translation: 提供一种超接合制造方法，包括：提供轻掺杂衬底（S11）; 采用变形掺杂工艺以形成P型重掺杂区域（S12）或N型重掺杂区域（S13）; 并进行退火处理（S14）。 或提供第一种重掺杂衬底; 采用转化掺杂工艺形成第二种重掺杂区; 并进行退火处理。 由此，简化了制造工序，降低了生产成本。

公开(公告)号：US20150137304A1

公开(公告)日：2015-05-21

申请号：US14412404

申请日：2013-01-21

Applicant: JIANGSU R&D CENTER FOR INTERNET OF THINGS

Inventor： Haiyang Mao ,  Wen Ou

IPC: H01L31/0352 ,  H01L27/144 ,  H01L31/18 ,  H01L31/028

CPC classification number: H01L31/0352 ,  G01J5/022 ,  G01J5/12 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/028 ,  H01L31/1804 ,  H01L35/32

Abstract: The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black silicon-based IR absorber is set on the releasing barrier band; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures as well as the heat conductor under the first thermal-conductive-electrical-isolated structures. The hot junctions of the thermopile are in contact with the IR absorber through the second thermal-conductive-electrical-isolated structures, and the second thermal-conductive-electrical-isolated structures are located above the releasing barrier band. The structure of such detector is simple, and it is easy to implement and can also be monolithicly integrated. Such detector has high responsivity and detection rate, and is CMOS-compatible, thus can be used widely in a safe and reliable manner.

Abstract translation: 本发明涉及高性能红外探测器的结构和制造方法。 该结构包括基底; 衬底上的释放阻挡带; 由隔离带构成的隔热室; 位于热隔离室正上方的黑色硅基IR吸收体和黑色硅系IR吸收体设置在释放屏障带上; 围绕黑色硅基IR吸收体的侧面设置多个热电偶。 黑色硅基IR吸收体周围的热电堆串联电连接。 热电堆的冷接头通过第一导热电隔离结构以及在第一热导电隔离结构下的导热体连接到基板。 热电堆的热接头通过第二导热电隔离结构与IR吸收体接触，第二导热电隔离结构位于释放阻挡带上方。 这种检测器的结构简单，易于实现，也可以整体集成。 这种检测器具有高响应度和检测率，并且兼容CMOS，因此可以安全可靠地广泛使用。

公开(公告)号：US20150168221A1

公开(公告)日：2015-06-18

申请号：US14412408

申请日：2013-01-21

Applicant: JIANGSU R&D CENTER FOR INTERNET OF THINGS

Inventor： Haiyang Mao ,  Wen Ou

IPC: G01J5/12 ,  B81C1/00 ,  H01L35/34 ,  B81B7/02 ,  H01L35/32 ,  H01L35/22

CPC classification number: G01J5/12 ,  B81B7/02 ,  B81B2201/0278 ,  B81C1/00111 ,  G01J5/022 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34

Abstract: This invention involves structure and fabrication method of a black silicon-based MEMS thermopile IR detector. The high-performance black silicon-based MEMS thermopile IR detector includes a substrate; a releasing barrier band on the substrate; a thermal isolation cavity constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation cavity; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series thus to form a thermopile. Metallic electrodes are located beside the electrically-connected thermopiles for signal output. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures, the heat conductor is located at the lateral sides of the thermal isolation cavity. The hot junctions of the thermopile are in contact with the IR absorber through the second thermal-conductive-electrical-isolated structures, and the second thermal-conductive-electrical-isolated structures are located above the releasing barrier band. The structure of such detector is simple, and it is easy to implement and can also be monolithicly integrated. Such detector has high responsivity and detection rate, and is CMOS-compatible, thus can be used widely in a safe and reliable manner.

Abstract translation: 本发明涉及黑色硅基MEMS热电堆IR检测器的结构和制造方法。 高性能黑色硅基MEMS热电堆IR检测器包括基板; 衬底上的释放阻挡带; 由释放阻挡带构成的热隔离腔; 位于热隔离腔正上方的黑色硅基红外吸收体; 围绕黑色硅基IR吸收体的侧面设置多个热电偶。 黑色硅基IR吸收体周围的热电堆串联电连接形成热电堆。 金属电极位于电连接的热电堆旁边，用于信号输出。 热电堆的冷接头通过第一导热电隔离结构连接到基板，热导体位于热隔离腔的侧面。 热电堆的热接头通过第二导热电隔离结构与IR吸收体接触，第二导热电隔离结构位于释放阻挡带上方。 这种检测器的结构简单，易于实现，也可以整体集成。 这种检测器具有高响应度和检测率，并且兼容CMOS，因此可以安全可靠地广泛使用。

公开(公告)号：US09222837B2

公开(公告)日：2015-12-29

申请号：US14412408

申请日：2013-01-21

Applicant: JIANGSU R&D CENTER FOR INTERNET OF THINGS

Inventor： Haiyang Mao ,  Wen Ou

IPC: H01L31/058 ,  G01J5/12 ,  G01J5/02 ,  B81B7/02 ,  B81C1/00 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34

CPC classification number: G01J5/12 ,  B81B7/02 ,  B81B2201/0278 ,  B81C1/00111 ,  G01J5/022 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34

Abstract: This invention involves structure and fabrication method of a black silicon-based MEMS thermopile IR detector. The high-performance black silicon-based MEMS thermopile IR detector includes a substrate; a releasing barrier band on the substrate; a thermal isolation cavity constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation cavity; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series thus to form a thermopile. Metallic electrodes are located beside the electrically-connected thermopiles for signal output. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures, the heat conductor is located at the lateral sides of the thermal isolation cavity. The hot junctions of the thermopile are in contact with the IR absorber through the second thermal-conductive-electrical-isolated structures, and the second thermal-conductive-electrical-isolated structures are located above the releasing barrier band. The structure of such detector is simple, and it is easy to implement and can also be monolithically integrated. Such detector has high responsivity and detection rate, and is CMOS-compatible, thus can be used widely in a safe and reliable manner.

Abstract translation: 本发明涉及黑色硅基MEMS热电堆IR检测器的结构和制造方法。 高性能黑色硅基MEMS热电堆IR检测器包括基板; 衬底上的释放阻挡带; 由释放阻挡带构成的热隔离腔; 位于热隔离腔正上方的黑色硅基红外吸收体; 围绕黑色硅基IR吸收体的侧面设置多个热电偶。 黑色硅基IR吸收体周围的热电堆串联电连接形成热电堆。 金属电极位于电连接的热电堆旁边，用于信号输出。 热电堆的冷接头通过第一导热电隔离结构连接到基板，热导体位于热隔离腔的侧面。 热电堆的热接头通过第二导热电隔离结构与IR吸收体接触，第二导热电隔离结构位于释放阻挡带上方。 这种检测器的结构简单，易于实现，也可以单片集成。 这种检测器具有高响应度和检测率，并且兼容CMOS，因此可以安全可靠地广泛使用。

公开(公告)号：US09117949B2

公开(公告)日：2015-08-25

申请号：US14412404

申请日：2013-01-21

Applicant: JIANGSU R&D CENTER FOR INTERNET OF THINGS

Inventor： Haiyang Mao ,  Wen Ou

IPC: H01L31/058 ,  H01L31/0352 ,  G01J5/12 ,  H01L35/32 ,  G01J5/02 ,  H01L27/144 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/0352 ,  G01J5/022 ,  G01J5/12 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/028 ,  H01L31/1804 ,  H01L35/32

Abstract: The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black silicon-based IR absorber is set on the releasing barrier band; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures as well as the heat conductor under the first thermal-conductive-electrical-isolated structures. The hot junctions of the thermopile are in contact with the IR absorber through the second thermal-conductive-electrical-isolated structures, and the second thermal-conductive-electrical-isolated structures are located above the releasing barrier band. The structure of such detector is simple, and it is easy to implement and can also be monolithicly integrated. Such detector has high responsivity and detection rate, and is CMOS-compatible, thus can be used widely in a safe and reliable manner.

Abstract translation: 本发明涉及高性能红外探测器的结构和制造方法。 该结构包括基底; 衬底上的释放阻挡带; 由隔离带构成的隔热室; 位于热隔离室正上方的黑色硅基IR吸收体和黑色硅系IR吸收体设置在释放屏障带上; 围绕黑色硅基IR吸收体的侧面设置多个热电偶。 黑色硅基IR吸收体周围的热电堆串联电连接。 热电堆的冷接头通过第一导热电隔离结构以及在第一热导电隔离结构下的导热体连接到基板。 热电堆的热接头通过第二导热电隔离结构与IR吸收体接触，第二导热电隔离结构位于释放阻挡带上方。 这种检测器的结构简单，易于实现，也可以整体集成。 这种检测器具有高响应度和检测率，并且兼容CMOS，因此可以安全可靠地广泛使用。