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    Improvements in or relating to portable turning lathes
    1.
    发明专利
    Improvements in or relating to portable turning lathes 未知

    公开(公告)号：GB913214A

    公开(公告)日：1962-12-19

    申请号：GB1142459

    申请日：1959-04-03

    Applicant: JOHN DEVLIN HOTCHKISS

    IPC: B23B5/00

    Abstract: 913,214. Portable lathes. HOTCHKISS, J. D. June 13, 1960 [April 3, 1959], No. 11424/59. Class 83 (3). Portable turning apparatus for re-shaping a shaft comprises two end structures held in spaced relationship by support members secured to and extending between the structures, each end structure having an aperture through which the shaft passes, bearing means for mounting the end structures on the shaft so that the apparatus may rotate bodily about the shaft and a tool-holder mounted for rotation with the end structures. The clamping plates 2, 2a, forming the end supports may be split and are rotatable about the work 1 to be reconditioned. One or both plates may be in two parts to form driving pulleys. Tie-rods 3-5 maintain the plates rigidly apart and the tool-saddle 10 is adapted to slide along the rods 4, 5. The rods may be inclined for taper work and the tool is traversed by a screw 11 driven intermittently by a ratchet projection 16 striking a stop 18 secured to the shaft. The rest 13 is pivoted at 14 and moved by a nut 15 to adjust the cut.

    System and method for allocating multi-function resources for a wetdeck process in semiconductor wafer fabrication
    4.
    发明授权
    System and method for allocating multi-function resources for a wetdeck process in semiconductor wafer fabrication 有权
    用于在半导体晶片制造中为湿法工艺分配多功能资源的系统和方法

    公开(公告)号：US07184850B1

    公开(公告)日：2007-02-27

    申请号：US11263589

    申请日：2005-10-31

    Applicant: George Logsdon ,  Gary Elmore ,  John Devlin

    Inventor： George Logsdon ,  Gary Elmore ,  John Devlin

    IPC: G05B19/00

    CPC classification number: G05B19/41865 ,  G05B2219/31264 ,  G05B2219/31379 ,  G05B2219/45031 ,  G06Q10/0631 ,  Y02P90/20

    Abstract: A system and method is disclosed for allocating multi-function resources among a plurality of tasks within a wetdeck process in semiconductor wafer fabrication. A resource allocator allocates multi-function resources among tasks within a process system that executes at least one application process. The resource allocator comprises a monitoring controller, model of the process system and a resource allocation controller. The monitoring controller monitors measurable characteristics associated with the executing application process, multi-function resources and tasks. The model represents the multi-function resources and the tasks, and defines relationships among them. The resource allocation controller operates the model in response to the monitored measurable characteristics and allocates ones of the multi-function resources among ones of the tasks to efficiently execute the wetdeck process of the semiconductor wafer fabrication process.

    Abstract translation: 公开了一种用于在半导体晶片制造中的湿地工艺中的多个任务之间分配多功能资源的系统和方法。 资源分配器在执行至少一个应用进程的进程系统内的任务之间分配多功能资源。 资源分配器包括监视控制器，过程系统的模型和资源分配控制器。 监视控制器监视与执行的应用进程相关的可测量特征，多功能资源和任务。 该模型代表多功能资源和任务，并定义了它们之间的关系。 资源分配控制器响应于可监测的可测量特性来操作模型，并且在任务之一中分配多个功能资源中的一个以有效地执行半导体晶片制造过程的湿法处理。

    Semiconductor structure with flared mesa burying layers
    5.
    发明授权
    Semiconductor structure with flared mesa burying layers 失效
    半导体结构具有扩张的台面埋层

    公开(公告)号：US4935936A

    公开(公告)日：1990-06-19

    申请号：US313636

    申请日：1989-02-22

    Applicant: Andrew W. Nelson ,  Richard E. Hobbs ,  W. John Devlin ,  Charles G. Lenton

    Inventor： Andrew W. Nelson ,  Richard E. Hobbs ,  W. John Devlin ,  Charles G. Lenton

    IPC: G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  H01L21/205 ,  H01L31/04 ,  H01L31/10 ,  H01L33/00 ,  H01S5/00 ,  H01S5/227

    CPC classification number: H01L33/0062 ,  H01S5/227 ,  H01S5/2275

    Abstract: A semiconductor structure and methods for making it, for use in opto-electronic devices, employs only MOVPE growth steps. The structure is based on a mesa having substantially non-reentrant sides. To make it, an initial semiconductor structure is produced which comprises a substrate with a mesa thereon, the mesa having a self-aligned, central stripe of metal organic vapour phase growth suppressing material on its uppermost surface. Burying layers are then grown by MOVPE at either side of the mesa, the stripe removed, and covering layers grown over the mesa and adjoining regions of the burying layers. To make an opto-electronic device, a silica window can be formed on the uppermost surface of the covering layers and contacts provided through the window and to the remote face of the substrate. Two methods of making the initial semiconductor structure are described. Devices such as optical detectors and waveguides can be made using methods according to the invention. Particularly importantly, semiconductor lasers which will operate in a single transverse mode can be made.

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