公开(公告)号：WO2006051994A2

公开(公告)日：2006-05-18

申请号：PCT/JP2005/020981

申请日：2005-11-09

Applicant: CANON KABUSHIKI KAISHA ,  TOKYO INSTITUTE OF TECHNOLOGY ,  DEN, Tohru ,  IWASAKI, Tatsuya ,  HOSONO, Hideo ,  KAMIYA, Toshio ,  NOMURA, Kenji

Inventor： DEN, Tohru ,  IWASAKI, Tatsuya ,  HOSONO, Hideo ,  KAMIYA, Toshio ,  NOMURA, Kenji

IPC: H01L27/32 ,  H01L29/786

CPC classification number: H01L27/1225 ,  G03G5/08 ,  G03G5/144 ,  H01L27/1214 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/78693 ,  H01L2251/5315

Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Abstract translation: 本发明的目的是提供一种使用无定形氧化物的新的发光装置。 发光器件具有存在于第一和第二电极之间的发光层和场效应晶体管，其中有源层是无定形的。

公开(公告)号：WO2002061844A1

公开(公告)日：2002-08-08

申请号：PCT/GB2001/002190

申请日：2001-05-17

Applicant: JAPAN SCIENCE AND TECHNOLOGY CORPORATION ,  HITACHI EUROPE LIMITED ,  CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LTD. ,  KAMIYA, Toshio ,  DURRANI, Zahid, Ali, Khan ,  TAN, Yong, Tong ,  AHMED, Haroon ,  MIZUTA, Hiroshi ,  FURUTA, Yoshikazu

Inventor： KAMIYA, Toshio ,  DURRANI, Zahid, Ali, Khan ,  TAN, Yong, Tong ,  AHMED, Haroon ,  MIZUTA, Hiroshi ,  FURUTA, Yoshikazu

IPC: H01L29/76

CPC classification number: B82Y10/00 ,  H01L29/66439 ,  H01L29/7613

Abstract: A single-electron transistor (1) has a point-contact channel (2) and side gates (5) formed in a granular layer (6). The granular layer is fabricated by depositing a nanocrystalline silicon layer (6') using plasma-enhanced chemical vapour deposition (PECVD), carrying out oxidation in dry oxygen at 750 °C and performing an anneal in argon at 1000 °C. The granular layer comprises crystallinreconductive regions (8) and amorphous insulating regions (10), wherein the amorphous region forms a tunnel barrier with a height greater than 100 meV. The single-electron transistor exhibits Coulomb blockade at room temperature.

Abstract translation: 单电子晶体管（1）具有形成在粒状层（6）中的点接触沟道（2）和侧栅极（5）。 通过使用等离子体增强化学气相沉积（PECVD）沉积纳米晶硅层（6'），在750℃的干燥氧气中进行氧化并在1000℃的氩气中进行退火来制造颗粒层。颗粒层 包括晶状体导电区域（8）和非晶绝缘区域（10），其中非晶区域形成高度大于100meV的隧道势垒。 单电子晶体管在室温下表现出库仑阻滞。

公开(公告)号：WO2006051993A3

公开(公告)日：2006-09-14

申请号：PCT/JP2005020980

申请日：2005-11-09

Applicant: CANON KK ,  TOKYO INST TECH ,  SANO MASAFUMI ,  NAKAGAWA KATSUMI ,  HOSONO HIDEO ,  KAMIYA TOSHIO ,  NOMURA KENJI

Inventor： SANO MASAFUMI ,  NAKAGAWA KATSUMI ,  HOSONO HIDEO ,  KAMIYA TOSHIO ,  NOMURA KENJI

IPC: H01L29/786 ,  H01L21/363 ,  H01L21/428

CPC classification number: H01L29/78693 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Abstract translation: 提供了例如可应用于TFT的有源层的新型无定形氧化物。 无定形氧化物包含微晶。

公开(公告)号：WO2006051994A3

公开(公告)日：2006-07-06

申请号：PCT/JP2005020981

申请日：2005-11-09

Applicant: CANON KK ,  TOKYO INST TECH ,  DEN TOHRU ,  IWASAKI TATSUYA ,  HOSONO HIDEO ,  KAMIYA TOSHIO ,  NOMURA KENJI

Inventor： DEN TOHRU ,  IWASAKI TATSUYA ,  HOSONO HIDEO ,  KAMIYA TOSHIO ,  NOMURA KENJI

IPC: H01L27/32 ,  B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  G09F9/30 ,  H01L29/786 ,  H01L51/50 ,  H05B33/10

CPC classification number: H01L29/04 ,  G03G5/08 ,  G03G5/144 ,  H01L27/1214 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78693 ,  H01L2251/5315

Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer (78) existing between first and second electrodes (77, 79) and a field effect transistor, of which the active layer (72) is an amorphous oxide.

Abstract translation: 本发明的目的是提供一种使用无定形氧化物的新的发光装置。 发光器件具有存在于第一和第二电极（77,79）之间的发光层（78）和场效应晶体管，其中有源层（72）是无定形氧化物。

公开(公告)号：WO2006051995A1

公开(公告)日：2006-05-18

申请号：PCT/JP2005/020982

申请日：2005-11-09

Applicant: CANON KABUSHIKI KAISHA ,  TOKYO INSTITUTE OF TECHNOLOGY ,  SANO, Masafumi ,  NAKAGAWA, Katsumi ,  HOSONO, Hideo ,  KAMIYA, Toshio ,  NOMURA, Kenji

Inventor： SANO, Masafumi ,  NAKAGAWA, Katsumi ,  HOSONO, Hideo ,  KAMIYA, Toshio ,  NOMURA, Kenji

IPC: H01L29/786 ,  H01L21/363

CPC classification number: H01L29/51 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

Abstract: A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1 ~10-18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

Abstract translation: 提供了一种采用无定形氧化物的新型场效应晶体管。 在本发明的实施例中，晶体管包括含有浓度小于1〜10-18 / cm3的电子载体的无定形氧化物层，栅极绝缘层由与非晶氧化物接触的第一层 以及与第一层不同的第二层。

公开(公告)号：WO2006051993A2

公开(公告)日：2006-05-18

申请号：PCT/JP2005/020980

申请日：2005-11-09

Applicant: CANON KABUSHIKI KAISHA ,  TOKYO INSTITUTE OF TECHNOLOGY ,  SANO, Masafumi ,  NAKAGAWA, Katsumi ,  HOSONO, Hideo ,  KAMIYA, Toshio ,  NOMURA, Kenji

Inventor： SANO, Masafumi ,  NAKAGAWA, Katsumi ,  HOSONO, Hideo ,  KAMIYA, Toshio ,  NOMURA, Kenji

IPC: H01L29/786 ,  H01L21/428 ,  H01L21/363

CPC classification number: H01L29/78693 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Abstract translation: 提供了例如适用于TFT的有源层的新颖的无定形氧化物。 无定形氧化物包括微晶。

公开(公告)号：JPS534903A

公开(公告)日：1978-01-18

申请号：JP7800276

申请日：1976-07-01

Applicant: KAMIYA TOSHIO

Inventor： KAMIYA TOSHIO

IPC: C09K3/10 ,  B29C73/16

公开(公告)号：JP2001105416A

公开(公告)日：2001-04-17

申请号：JP29284899

申请日：1999-10-14

Applicant: KAMIYA TOSHIO

Inventor： KAMIYA TOSHIO

IPC: B28B3/26 ,  B28B3/20

Abstract: PROBLEM TO BE SOLVED: To provide a mold for molding a wet tile of a novel structure capable of integrally extrusion molding three or more tile blank plates superposed in a plate thickness direction. SOLUTION: Inner balls 18 are arranged in an extrusion port 14 of the mold 10 to substantially partition into a plurality of regions therein to form molding ports 58 of three or more tile blank plates 20 superposed in a plate thickness direction. Then, molding ports 60 of plate-like couplers 70 for coupling the ports 58 of the plates 20 to each other at both ends of a plate width direction are formed at the ports 58. Thus, the three or more plates 20 superposed in the thickness direction are extrusion molded as molding 22 of integrally mixed soil in the state that the plates 20 are connected to each other by the couplers 70.