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    METHODS FOR MAKING VERTICAL ELECTRICAL FEED THROUGH STRUCTURES
    3.
    发明申请
    METHODS FOR MAKING VERTICAL ELECTRICAL FEED THROUGH STRUCTURES 审中-公开
    通过结构制作垂直电气进给的方法

    公开(公告)号：WO2005055369A2

    公开(公告)日：2005-06-16

    申请号：PCT/US2004/039394

    申请日：2004-11-22

    Applicant: FORMFACTOR, INC. ,  MATHIEU, Gaetan, L. ,  KHANDROS, Igor, K. ,  REYNOLDS, Carl, V.

    Inventor： MATHIEU, Gaetan, L. ,  KHANDROS, Igor, K. ,  REYNOLDS, Carl, V.

    IPC: H01R

    CPC classification number: H05K3/42 ,  G01R1/06711 ,  G01R1/07307 ,  G01R3/00 ,  H05K3/308 ,  H05K2201/09836 ,  H05K2203/0338

    Abstract: Methods are provided for making vertical feed through electrical connection structures in a substrate or tile. The vertical feed throughs can be configured to make plated through holes usable for inserting and attaching connector probes. . Probes may be attached to the plated through holes or attachment wells to create resilient spring contacts to form a wafer probe card assembly. A twisted tube plated through hole structure is formed by supporting twisted sacrificial wires coated with the plating material in a substrate, and later etching away the wires. Vertical feed throughs can also be configured to make tiles attachable and detachable as a layer between other substrates. The vertical feed through paths are formed with one end of each feed through hole permanently encapsulating a first electrical contact, and a second end supporting another pluggable and unpluggable electrical probe contact. Decoupling capacitors can be further plugged into holes formed in close proximity to the vertical feed through holes to increase performance of the decoupling capacitor.

    Abstract translation: 提供了用于通过基底或瓦片中的电连接结构进行垂直馈送的方法。 垂直进料通道可以配置为制造可用于插入和连接连接器探头的电镀通孔。 。 探针可以附着到电镀通孔或连接孔，以产生弹性弹簧触点，以形成晶片探针卡组件。 通过将涂覆有电镀材料的扭转牺牲线支撑在基板中，并且随后蚀刻掉线来形成扭曲管镀通孔结构。 垂直进料通道也可以被配置成使得瓦片可附着和分离成其它基底之间的层。 垂直进料通道形成有每个进料通孔的一端，其永久地密封第一电接触，第二端支撑另一可插拔和可拔出的电探针接触。 去耦电容器可以进一步插入靠近垂直馈通孔形成的孔中，以提高去耦电容的性能。

    METHODS FOR MAKING VERTICAL ELECTRICAL FEED THROUGH STRUCTURES
    5.
    发明申请
    METHODS FOR MAKING VERTICAL ELECTRICAL FEED THROUGH STRUCTURES 审中-公开
    通过结构制作垂直电气进给的方法

    公开(公告)号：WO2005055369A3

    公开(公告)日：2005-11-24

    申请号：PCT/US2004039394

    申请日：2004-11-22

    Applicant: FORMFACTOR INC ,  MATHIEU GAETAN L ,  KHANDROS IGOR K ,  REYNOLDS CARL V

    Inventor： MATHIEU GAETAN L ,  KHANDROS IGOR K ,  REYNOLDS CARL V

    IPC: G01R1/067 ,  G01R1/073 ,  G01R3/00 ,  H05K3/30 ,  H05K3/42 ,  H01K3/10

    CPC classification number: H05K3/42 ,  G01R1/06711 ,  G01R1/07307 ,  G01R3/00 ,  H05K3/308 ,  H05K2201/09836 ,  H05K2203/0338

    Abstract: Methods are provide for making vertical feed through electrical connections structure in a substrate or tile. The vertical feed through (Fig. 2, 10) can be configured to make plated through holes usable for inserting and attaching connector probes ( Fig. 2, 12). Probes may be attached to the plated through holes or attachment wells to create resilient spring contacts to form a wafer probe card assembly. A twisted tube plated through hole structure (Fig. 9D, 74) is formed by supporting twisted sacrificial wire coated with the plating material in a substrate (Fig. 9D, 79), and later etching away the wires (Fig. 9A, 74).

    Abstract translation: 提供了通过基板或瓦片中的电连接结构进行垂直馈送的方法。 垂直馈送（图2,10）可以被配置为制造可用于插入和连接连接器探头的电镀通孔（图2,12）。 探针可以附着到电镀通孔或连接孔，以产生弹性弹簧触点，以形成晶片探针卡组件。 通过将涂覆有电镀材料的扭转牺牲线支撑在基板（图9D，79）中，并且随后蚀刻掉导线（图9A，74），形成通过电镀的通孔结构（图9D，74） 。

    CARBON NANOTUBE CONTACT STRUCTURES
    6.
    发明申请
    CARBON NANOTUBE CONTACT STRUCTURES 审中-公开
    碳纳米管接触结构

    公开(公告)号：WO2008024726A2

    公开(公告)日：2008-02-28

    申请号：PCT/US2007076345

    申请日：2007-08-21

    Applicant: FORMFACTOR INC ,  ELDRIDGE BENJAMIN N ,  GRITTERS JOHN K ,  KHANDROS IGOR K ,  MARTENS ROD ,  MATHIEU GAETAN L

    Inventor： ELDRIDGE BENJAMIN N ,  GRITTERS JOHN K ,  KHANDROS IGOR K ,  MARTENS ROD ,  MATHIEU GAETAN L

    IPC: D01F9/12

    CPC classification number: G01R1/06755 ,  H01R13/03 ,  Y10T29/49204

    Abstract: A carbon nanotube contact structure can be used for making pressure connections to a DUT. The contact structure can be formed using a carbon nanotube film or with carbon nanotubes in solution. The carbon nanotube film can be grown in a trench in a sacrificial substrate in which a contact structure such as a beam or contact element is then formed by metal plating. The film can also be formed on a contact element and have metal posts dispersed therein to provide rigidity and elasticity. Contact structures or portions thereof can also be plated with a solution containing carbon nanotubes. The resulting contact structure can be tough, and can provide good electrical conductivity.

    Abstract translation: 可以使用碳纳米管接触结构来与DUT进行压力连接。 可以使用碳纳米管膜或溶液中的碳纳米管来形成接触结构。 碳纳米管膜可以在牺牲基板中的沟槽中生长，其中通过金属电镀形成诸如光束或接触元件的接触结构。 膜也可以形成在接触元件上，并且金属柱分散在其中以提供刚性和弹性。 接触结构或其部分也可以镀有含有碳纳米管的溶液。 所得到的接触结构可以是韧性的，并且可以提供良好的导电性。

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