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公开(公告)号：JP2010516054A
公开(公告)日：2010-05-13
申请号：JP2009545498
申请日：2008-01-15
Applicant: 韓国光技術院Korea Photonics Technology Institute
CPC classification number: H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599
Abstract: 本発明は、高い静電気放電に対して耐性を有するＬＥＤ及びその製造方法に関する。 より具体的には、第１半導体層の上面と第２半導体層の上面に渡って形成される第１電極層、前記第１電極層と離隔されて前記第２半導体層の上面に形成される透明電極層、及び前記透明電極層の上面に形成される第２電極層を包含するＬＥＤを提供する。
本発明によると、電極の形状を従来の通常的な電極とは異なるように配置する構造だけを採択して静電気に対する耐性を有し、電気的衝撃に対して強い、信頼性の高い発光ダイオード素子を提供することができる。
【選択図】図２-
公开(公告)号：JP5270575B2
公开(公告)日：2013-08-21
申请号：JP2009545498
申请日：2008-01-15
Applicant: 韓国光技術院Korea Photonics Technology Institute
CPC classification number: H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599
Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
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3.发明申请LIGHT EMITTING DIODE WITH HIGH ELECTROSTATIC DISCHARGE AND FABRICATION METHOD THEREOF 审中-公开具有高静电放电的发光二极管及其制造方法
公开(公告)号：WO2008088165A1
公开(公告)日：2008-07-24
申请号：PCT/KR2008/000257
申请日：2008-01-15
Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE , BAEK, Jong-Hyeob , KIM, Sang-Mook , LEE, Sang-Hern , LEE, Seung-Jae , JHIN, Jung-Geun , KIM, Yoon-Seok , YOM, Hong-Seo , YU, Young-Moon
Inventor： BAEK, Jong-Hyeob , KIM, Sang-Mook , LEE, Sang-Hern , LEE, Seung-Jae , JHIN, Jung-Geun , KIM, Yoon-Seok , YOM, Hong-Seo , YU, Young-Moon
IPC: H01L33/00
CPC classification number: H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
Abstract translation: 本发明涉及一种具有高静电放电的发光二极管及其制造方法，更具体地涉及包括设置在第一半导体层的上表面上的第一电极层和第二半导体的上表面的发光二极管 层; 形成在与第一电极层间隔开的第二半导体层的上表面上的透明电极层; 以及设置在所述透明电极层的上表面上的第二电极层。 通过本发明，通过选择与常规电极不同的布置电极形式的结构，提供了具有抗静电放电的耐电击性的高可靠性的电子冲击强度的发光二极管元件。
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公开(公告)号：WO2007046664A1
公开(公告)日：2007-04-26
申请号：PCT/KR2006/004294
申请日：2006-10-20
Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE , KIM, Jae-Pil , PARK, Seung-Hyun , KIM, Tae-Hun , LEE, Jae-Moon , YU, Young-Moon
Inventor： KIM, Jae-Pil , PARK, Seung-Hyun , KIM, Tae-Hun , LEE, Jae-Moon , YU, Young-Moon
IPC: H01L33/00
CPC classification number: H01L33/56 , H01L33/501 , H01L2224/48091 , H01L2224/49107 , H01L2933/0091 , H01L2924/00014
Abstract: The present invention relates to light diffusion type light emitting diodes, more particularly, to a light emitting device having a large divergence angle by widely spreading an emitted light from a single color to a white color and a method thereof. The light emitting diode including the encapsulating layer according to the present invention is characterized by including at least two materials with different characteristics. According to the present invention, an encapsulating material for light emitting diode is mixed with at least two materials with a different polarity or a refractive index to easily form a light emitting diode. In addition, the light emitting diode die is bonded on the bottom surface of a cup, and an encapsulating material and microspheres are dispersed in the vicinity and upper portion of the light emitting diode and the entire light emitting diode, therefore the light emitting diode has a large and uniform divergence angle due to a light uniformly scattered and refracted. Furthermore, the microsphere particles with similar density to the encapsulating layer exist, thereby solving a problem of precipitation of particles, which occurs when the existing inorganic particles are dispersed.
Abstract translation: 本发明涉及光漫射型发光二极管，更具体地涉及通过广泛地将发射的光从单一颜色扩散到白色而具有大的发散角的发光器件及其方法。 包括根据本发明的封装层的发光二极管的特征在于包括具有不同特性的至少两种材料。 根据本发明，用于发光二极管的封装材料与具有不同极性或折射率的至少两种材料混合以容易地形成发光二极管。 此外，发光二极管管芯结合在杯的底面上，并且封装材料和微球体分散在发光二极管的附近和上部以及整个发光二极管中，因此发光二极管具有 由于光均匀分散和折射，发散角大而均匀。 此外，存在与包封层密度相似的微球颗粒，从而解决了当现有的无机颗粒分散时发生的颗粒沉淀的问题。
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5.发明申请
公开(公告)号：WO2009020365A3
公开(公告)日：2009-02-12
申请号：PCT/KR2008/004607
申请日：2008-08-07
Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE , YU, Young Moon , BAEK, Jong Hyeob , KIM, Sang Mook , KIM, Gang Ho , KANG, Jung-In , YOM, Hong Seo
Inventor： YU, Young Moon , BAEK, Jong Hyeob , KIM, Sang Mook , KIM, Gang Ho , KANG, Jung-In , YOM, Hong Seo
IPC: H01L33/00
Abstract: The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.
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Patent Agency Ranking
公开(公告)号：TWI593137B
公开(公告)日：2017-07-21
申请号：TW101144652
申请日：2012-11-29
Applicant: 韓國光技術院 , KOREA PHOTONICS TECHNOLOGY INSTITUTE
Inventor： 金相默 , KIM, SANG-MOOK , 白宗協 , BAEK, JONG-HYEOB
IPC: H01L33/10
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公开(公告)号：TW201419573A
公开(公告)日：2014-05-16
申请号：TW101144652
申请日：2012-11-29
Applicant: 韓國光技術院 , KOREA PHOTONICS TECHNOLOGY INSTITUTE
Inventor： 金相默 , KIM, SANG-MOOK , 白宗協 , BAEK, JONG-HYEOB
IPC: H01L33/10
Abstract: 本發明係揭露一種具有異質材料結構之發光元件及其製造方法。本發明之具有異質材料結構之發光元件包含：基板；形成在基板上的n型半導體層；形成在n型半導體層上的活性層；形成在活性層上的p型半導體層；形成在p型半導體層上的透明電極層；形成在透明電極層上的第一電極；以及形成在透明電極層、p型半導體層和活性層被蝕刻而露出n型半導體層的區域的第二電極，其中基板包含由具有互不相同的折射率的至少兩種材料構成的突出部。本發明製造具有異質材料結構的發光元件，由此減小半導體發光元件的缺陷並增大發光層的面積，且藉由增加光的散射而具有提高發光元件的亮度的效果。
Abstract in simplified Chinese: 本发明系揭露一种具有异质材料结构之发光组件及其制造方法。本发明之具有异质材料结构之发光组件包含：基板；形成在基板上的n型半导体层；形成在n型半导体层上的活性层；形成在活性层上的p型半导体层；形成在p型半导体层上的透明电极层；形成在透明电极层上的第一电极；以及形成在透明电极层、p型半导体层和活性层被蚀刻而露出n型半导体层的区域的第二电极，其中基板包含由具有互不相同的折射率的至少两种材料构成的突出部。本发明制造具有异质材料结构的发光组件，由此减小半导体发光组件的缺陷并增大发光层的面积，且借由增加光的散射而具有提高发光组件的亮度的效果。
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公开(公告)号：US20250155276A1
公开(公告)日：2025-05-15
申请号：US18274016
申请日：2022-09-22
Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE
Inventor： Myoung Jin KIM , Joo Young LEE , Young Ho KIM , Hui Oon KIM , Hyo Jong KIM , Hyo Young JUNG
Abstract: The present invention relates to an optical fiber acoustic sensor with improved acoustic signal measurement sensitivity, and includes: a light source unit that generates and outputs pulsed light; an optical circulator that outputs the pulsed light output from the light source unit and input to an input terminal through an output terminal, and outputs light incident reversely from the output terminal through a detection terminal; a sensing optical fiber connected to the output terminal of the optical circulator and installed to extend over a measurement target region; at least one acoustic focusing member having the sensing optical fiber wound thereon multiple times, arranged in a measurement target region and adapted to focus an external acoustic signal; a light detection unit that detects Rayleigh scattered light scattered in the sensing optical fiber and traveling reversely; and a signal processing unit that control generation of the pulsed light by the light source unit and measures a vibration frequency and an intensity of acoustic received through the sensing optical fiber from a signal detected by the light detection unit, based on an output time point of the pulsed light.
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公开(公告)号：US20250082197A1
公开(公告)日：2025-03-13
申请号：US18488099
申请日：2023-10-17
Applicant: Korea Photonics Technology Institute
Inventor： Seon Man KIM , Min Kyu PARK , Sung Joon KIM , Kwang Hoon LEE
Abstract: Disclosed are an AR optical system for measurement of ocular dyskinesia with improved quality of photographed images, and an AR apparatus including the same. According to one aspect of the present disclosure, there are provided an AR optical system for measurement of ocular dyskinesia with improved quality of photographed images by resolving the problem of uneven brightness and darkness occurring in the images due to structural problems, and an AR apparatus including the same.
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公开(公告)号：US12045008B2
公开(公告)日：2024-07-23
申请号：US17403960
申请日：2021-08-17
Applicant: Korea Photonics Technology Institute
Inventor： Seon Kyu Yoon , Ha Mong Shim , Jin Su Lee , Kwang Hoon Lee
CPC classification number: G03H1/0005 , G01B9/021 , G01B11/164 , G03H1/0402 , G03H1/0443 , G03H1/0866 , G03H2001/005 , G03H2001/0415
Abstract: According to an embodiment, a holographic microscope comprises a light source, an optical system splitting light emitted from the light source into an object and a reflective mirror and inducing interference between light reflected by the object or transmitted through the object and light reflected by the reflective mirror, a first image sensor receiving the interference light and sensing interference information for the interference light, a second image sensor receiving the light reflected by the object or transmitted through the object and sensing information for the received light, and an image processor deriving a shape of the object based on the interference information sensed by the first image sensor and the information sensed by the second image sensor.
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