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    WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A FILTER AND A SCATTERING STRUCTURE
    1.
    发明申请
    WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A FILTER AND A SCATTERING STRUCTURE 审中-公开
    波长转换半导体发光器件，包括滤波器和散射结构

    公开(公告)号：WO2011007276A1

    公开(公告)日：2011-01-20

    申请号：PCT/IB2010/052848

    申请日：2010-06-23

    Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  BIERHUIZEN, Serge J. ,  KRAMES, Michael R.

    Inventor： BIERHUIZEN, Serge J. ,  KRAMES, Michael R.

    IPC: G03B15/05 ,  H01L33/46 ,  H01L33/50

    CPC classification number: H01L33/46 ,  G03B15/05 ,  G03B2215/0567 ,  G03B2215/0592 ,  H01L33/50 ,  H01L2933/0091

    Abstract: A semiconductor structure comprises a light emitting layer (14) disposed between an n- type region (12) and a p-type region (16). A wavelength converting material (26) is disposed over the semiconductor structure. The wavelength converting material (26) is configured to absorb light emitted by the semiconductor structure and emit light of a different wavelength. A filter (28) configured to reflect blue ambient light is disposed over the wavelength converting material (26). A scattering structure (36) is disposed over the wavelength converting layer (26). The scattering structure (36) is configured to scatter light In some embodiments, the scattering structure (36) is a transparent' material having a rough surface, containing non-wavelength-converting particles that appear substantially white in ambient light, or including both a rough surface and white particles.

    Abstract translation: 半导体结构包括设置在n型区域（12）和p型区域（16）之间的发光层（14）。 波长转换材料（26）设置在半导体结构之上。 波长转换材料（26）被配置为吸收由半导体结构发射的光并发射不同波长的光。 配置成反射蓝色环境光的滤光器（28）设置在波长转换材料（26）上。 散射结构（36）设置在波长转换层（26）的上方。 散射结构（36）被配置为散射光。在一些实施例中，散射结构（36）是具有粗糙表面的透明材料，其包含在环境光中基本上呈白色的非波长转换颗粒，或者包括 粗糙的表面和白色颗粒。

    WAVELENGTH CONVERSION FOR PRODUCING WHITE LIGHT FROM HIGH POWER BLUE LED
    2.
    发明申请
    WAVELENGTH CONVERSION FOR PRODUCING WHITE LIGHT FROM HIGH POWER BLUE LED 审中-公开
    用于从大功率蓝光LED生产白光的波长转换

    公开(公告)号：WO2010131133A1

    公开(公告)日：2010-11-18

    申请号：PCT/IB2010/051629

    申请日：2010-04-14

    Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  KRAMES, Michael R. ,  MUELLER, Gerd O. ,  MUELLER-MACH, Regina B. ,  BECHTEL, Hans-Helmut ,  SCHMIDT, Peter J.

    Inventor： KRAMES, Michael R. ,  MUELLER, Gerd O. ,  MUELLER-MACH, Regina B. ,  BECHTEL, Hans-Helmut ,  SCHMIDT, Peter J.

    IPC: C09K11/08 ,  H05B33/14 ,  H01L33/50 ,  H01L33/20

    CPC classification number: C09K11/08 ,  H01L33/504 ,  H05B33/14 ,  Y02B20/181

    Abstract: A white light LED is described that uses an LED die that emits visible blue light in a wavelength range of about 450-470 nm. A red phosphor or quantum dot material converts some of the blue light to a visible red light having a peak wavelength between about 605-625 nm with a full-width-half-maximum (FWHM) less than 80nm. A green phosphor or quantum dot material converts some of the blue light to a green light having a FWHM greater than 40nm, wherein the combination of the blue light, red light, and green light produces a white light providing a color rendering of R a,8 >90 and a color temperature of between 2500K-5000K. Preferably, the red and green converting material do not saturate with an LED die output of 100 W/cm 2 and can reliably operate with an LED die junction temperature over 100 degrees C.

    Abstract translation: 描述了使用发射在约450-470nm的波长范围内的可见蓝光的LED管芯的白光LED。 红色荧光体或量子点材料将一些蓝色光转换成具有在约605-625nm之间的峰值波长和小于80nm的全宽半最大值（FWHM）的可见红光。 绿色荧光体或量子点材料将一些蓝色光转换成具有大于40nm的FWHM的绿色光，其中蓝色光，红色光和绿色光的组合产生白色光，提供Ra，8的显色性 > 90°，色温在2500K-5000K之间。 优选地，红色和绿色转换材料对于100W / cm 2的LED管芯输出不饱和，并且可以在LED管芯结温超过100摄氏度时可靠地工作。

    LIGHT SOURCE INCLUDING A WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE AND A FILTER
    4.
    发明申请
    LIGHT SOURCE INCLUDING A WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE AND A FILTER 审中-公开
    光源包括波长转换半导体发光器件和滤波器

    公开(公告)号：WO2010023624A1

    公开(公告)日：2010-03-04

    申请号：PCT/IB2009/053730

    申请日：2009-08-25

    Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  KRAMES, Michael R.

    Inventor： KRAMES, Michael R.

    IPC: H01L33/00

    CPC classification number: H01L33/504 ,  G02F1/133603 ,  H01L33/46

    Abstract: A semiconductor light emitting device (34) comprises a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer is adapted to emit first light having a first peak wavelength. A first wavelength converting material (38) is adapted to absorb the first light and emit second light having a second peak wavelength. A second wavelength converting material (36) is adapted to absorb either the first light or the second light and emit third light having a third peak wavelength. A filter (40) is adapted to reflect fourth light having a fourth peak wavelength. The fourth light is either a portion of the second light or a portion of the third light. The filter is configured to transmit light having a peak wavelength longer or shorter than the fourth peak wavelength. The filter is disposed over the light emitting device in the path of at least a portion of the first, second, and third light.

    Abstract translation: 半导体发光器件（34）包括设置在n型区域和p型区域之间的发光层。 发光层适于发射具有第一峰值波长的第一光。 第一波长转换材料（38）适于吸收第一光并发射具有第二峰值波长的第二光。 第二波长转换材料（36）适于吸收第一光或第二光并发射具有第三峰值波长的第三光。 滤光器（40）适于反射具有第四峰值波长的第四光。 第四个光是第二个光的一部分或第三个光的一部分。 滤波器被配置为透射具有比第四峰值波长更长或更短的峰值波长的光。 滤光器在第一，第二和第三光的至少一部分的路径中设置在发光器件上方。

    COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES
    6.
    发明申请
    COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES 审中-公开
    半导体器件的一致键合结构

    公开(公告)号：WO2010100578A2

    公开(公告)日：2010-09-10

    申请号：PCT/IB2010/050751

    申请日：2010-02-19

    Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  EPLER, John E. ,  KRAMES, Michael R. ,  NEFF, James G.

    Inventor： EPLER, John E. ,  KRAMES, Michael R. ,  NEFF, James G.

    IPC: H01L33/38 ,  H01L33/00

    CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/1403

    Abstract: A compliant bonding structure is disposed between a semiconductor light emitting device and a mount (40). When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps (32) that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer (46).

    Abstract translation: 适应性接合结构设置在半导体发光器件与安装件（40）之间。 当半导体发光器件例如通过向半导体发光器件提供压力，热量和/或超声波能量而附着于安装件时，顺应性接合结构收缩以部分地填充半导体发光器件与半导体发光器件之间的空间 安装。 在一些实施例中，柔性结合结构是在结合期间经历塑性变形的多个金属凸块（32）。 在一些实施例中，柔性结合结构是多孔金属层（46）。

    METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME
    7.
    发明申请
    METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME 审中-公开
    形成半导体材料的松散层的方法，半导体结构，器件和包括其中的工程衬底

    公开(公告)号：WO2010036622A1

    公开(公告)日：2010-04-01

    申请号：PCT/US2009/057734

    申请日：2009-09-21

    Applicant: S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES ,  PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  LETERTRE, Fabrice ,  FAURE, Bruce ,  KRAMES, Michael, R. ,  GARDNER, Nathan, F.

    Inventor： LETERTRE, Fabrice ,  FAURE, Bruce ,  KRAMES, Michael, R. ,  GARDNER, Nathan, F.

    IPC: H01L21/02

    CPC classification number: H01L21/02639 ,  H01L21/02367 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254

    Abstract: Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.

    Abstract translation: 制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔性材料的粘度以减小半导体材料内的应变。 在沉积第二层半导体材料期间，柔性材料可以回流。 可以选择柔性材料，使得当沉积第二层半导体材料时，改变柔性材料的粘度赋予结构松弛性。 在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。 还公开了制造半导体结构和器件的方法。 在这种方法中形成了新的中间结构。 工程衬底包括多个结构，其包括设置在表现出可变粘度的材料层上的半导体材料。

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