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    Adjusting apparatus for torque output of power tool
    1.
    发明专利
    Adjusting apparatus for torque output of power tool 未知

    公开(公告)号：GB2424608A

    公开(公告)日：2006-10-04

    申请号：GB0506449

    申请日：2005-03-31

    Applicant: LIN YU-MING

    Inventor： LIN YU-MING

    IPC: B25B23/14 ,  B25B21/02 ,  B25D16/00

    Abstract: An adjusting apparatus has a barrel 20 with a closed end 21, a neck portion 22 on the closed end and bores 24 on the closed end. An adjusting assembly 30 with an outer tube 31 and an inner tube 32 is connected to the neck portion of the barrel. A driving member 50, which is received in the barrel 20, has posts inserted into the bores of the barrel respectively and extruded out of the barrel to be rested on the adjusting assembly. A washer assembly 60 has a bearing 62 which is received in the barrel behind the driving member A movable member 70 has a gear portion 71 and two blocks 72 to be received in the barrel. A transmission shaft 80 has an annular gear portion 82 to be inserted into the barrel via the neck portion and the gear portion of the transmission shaft is meshed with the gear portion of the movable member. A spring 90 is received in the barrel behind the washer assembly to urge the driving member outwards.

    RADIATION HARDENED TRANSISTORS BASED ON GRAPHENE AND CARBON NANOTUBES
    5.
    发明申请
    RADIATION HARDENED TRANSISTORS BASED ON GRAPHENE AND CARBON NANOTUBES 审中-公开
    基于石墨和碳纳米管的辐射硬化晶体管

    公开(公告)号：WO2012096914A1

    公开(公告)日：2012-07-19

    申请号：PCT/US2012/020713

    申请日：2012-01-10

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  LIN, Yu-Ming ,  YAU, Jeng-Bang

    Inventor： LIN, Yu-Ming ,  YAU, Jeng-Bang

    IPC: H01L51/10 ,  H01L51/30

    CPC classification number: H01L29/16 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684

    Abstract: Graphene- and/or carbon nanotube-based radiation-hard transistor devices and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating a radiation-hard transistor is provided. The method includes the following steps. A radiation-hard substrate is provided. A carbon-based material is formed on the substrate wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor. Contacts are formed to the portions of the carbon-based material that serve as the source and drain regions of the transistor. A gate dielectric is deposited over the portion of the carbon-based material that serves as the channel region of the transistor. A top-gate contact is formed on the gate dielectric.

    Abstract translation: 提供了基于石墨烯和/或碳纳米管的辐射 - 硬晶体管器件及其制造技术。 一方面，提供一种制造辐射 - 硬质晶体管的方法。 该方法包括以下步骤。 提供辐射硬质基板。 碳基材料形成在基板上，其中一部分碳基材料用作晶体管的沟道区，碳基材料的其它部分用作晶体管的源极和漏极区。 触点形成为用作晶体管的源区和漏区的碳基材料的部分。 在用作晶体管的沟道区的碳基材料的部分上沉积栅极电介质。 在栅极电介质上形成顶栅接触。

    A GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE
    6.
    发明申请
    A GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE 审中-公开
    具有自对准门的石墨晶体管

    公开(公告)号：WO2012033569A1

    公开(公告)日：2012-03-15

    申请号：PCT/US2011/044619

    申请日：2011-07-20

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  AVOURIS, Phaedon ,  FARMER, Damon, B. ,  LIN, Yu-Ming ,  ZHU, Yu

    Inventor： AVOURIS, Phaedon ,  FARMER, Damon, B. ,  LIN, Yu-Ming ,  ZHU, Yu

    IPC: H01L51/00

    CPC classification number: H01L29/1606 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78684

    Abstract: A graphene-based field effect transistor includes source and drain electrodes that are self-aligned to a gate electrode. A stack of a seed layer and a dielectric metal oxide layer is deposited over a patterned graphene layer. A conductive material stack of a first metal portion and a second metal portion is formed above the dielectric metal oxide layer. The first metal portion is laterally etched employing the second metal portion, and exposed portions of the dielectric metal oxide layer are removed to form a gate structure in which the second metal portion overhangs the first metal portion. The seed layer is removed and the overhang is employed to shadow proximal regions around the gate structure during a directional deposition process to form source and drain electrodes that are self-aligned and minimally laterally spaced from edges of the gate electrode.

    Abstract translation: 基于石墨烯的场效应晶体管包括与栅电极自对准的源极和漏极。 在图案化的石墨烯层上沉积种子层和电介质金属氧化物层的堆叠。 第一金属部分和第二金属部分的导电材料堆叠形成在电介质金属氧化物层的上方。 利用第二金属部分横向蚀刻第一金属部分，去除电介质金属氧化物层的暴露部分以形成其中第二金属部分悬垂在第一金属部分上的栅极结构。 种子层被去除，并且在定向沉积工艺期间使用突出部来遮蔽栅极结构周围的近侧区域，以形成与栅电极的边缘自对准且最小程度地横向隔开的源电极和漏电极。

    SINGLE AND FEW-LAYER GRAPHENE BASED PHOTODETECTING DEVICES
    10.
    发明申请
    SINGLE AND FEW-LAYER GRAPHENE BASED PHOTODETECTING DEVICES 审中-公开
    单层和多层基于石墨的光刻设备

    公开(公告)号：WO2011023603A3

    公开(公告)日：2011-11-03

    申请号：PCT/EP2010061986

    申请日：2010-08-17

    Applicant: IBM ,  XIA FENGNIAN ,  AVOURIS PHAEDON ,  MUELLER THOMAS ,  LIN YU-MING

    Inventor： XIA FENGNIAN ,  AVOURIS PHAEDON ,  MUELLER THOMAS ,  LIN YU-MING

    IPC: H01L51/42 ,  G02B6/122 ,  H01L51/44

    CPC classification number: H01L51/428 ,  H01L29/1606 ,  H01L31/02327 ,  H01L31/035209 ,  H01L31/101 ,  Y02E10/549

    Abstract: A photodetector which uses single or multi-layer graphene on a gate oxide layer (12) as the photon detecting layer (14) is disclosed. Multiple embodiments are disclosed with different configurations of the source (8), drain (6) and gate (10) electrodes. In addition, a photodetector array comprising multiple photodetecting elements is disclosed for applications such as imaging and monitoring. An optical waveguide underlying the graphene layer (14) may be embedded into substrate (10) or gate oxide layer (12) in order to channel photons towards graphene layer (14).

    Abstract translation: 公开了一种在栅极氧化物层（12）上使用单层或多层石墨烯作为光子检测层（14）的光电检测器。 公开了具有源（8），漏极（6）和栅极（10）电极的不同配置的多个实施例。 此外，公开了包括多个光电检测元件的光电探测器阵列，用于诸如成像和监视的应用。 石墨烯层（14）下面的光波导可以嵌入衬底（10）或栅极氧化物层（12）中，以将光子传导到石墨烯层（14）。

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