公开(公告)号：WO2005050721A1

公开(公告)日：2005-06-02

申请号：PCT/KR2003/002891

申请日：2003-12-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  JOO, Oh Shim ,  JUNG, Kwang-Deog ,  LOKHANDE, C., D. ,  PARK, Bong-Ok

Inventor： JOO, Oh Shim ,  JUNG, Kwang-Deog ,  LOKHANDE, C., D. ,  PARK, Bong-Ok

IPC: H01L21/20

CPC classification number: H01L28/65 ,  C25D3/52 ,  H01L21/2885

Abstract: A ruthenium oxide-thin film having a high specific capacitance can be prepared by a method which comprises the steps of immersing a working electrode-plate and a counter electrode in an electrodeposition bath containing a ruthenium salt, and applying a current between two electrodes, without further heat-treatment step at a low cost.

Abstract translation: 具有高比电容的氧化钌薄膜可以通过以下步骤制备：将工作电极板和对电极浸入含有钌盐的电沉积浴中并在两个电极之间施加电流的步骤，没有 进一步的热处理步骤以低成本。