公开(公告)号：WO2006121563A3

公开(公告)日：2006-11-16

申请号：PCT/US2006/013562

申请日：2006-04-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  RANADE, Rajiv, M. ,  MAGTOTO, Teresita, Q. ,  BEHM, Gary, W.

Inventor： RANADE, Rajiv, M. ,  MAGTOTO, Teresita, Q. ,  BEHM, Gary, W.

IPC: G06F19/00 ,  G03F7/36

Abstract: A method and system for controlling a dimension of an etched feature (150). The method includes: measuring a mask feature (145) formed on a top surface of a layer (110) on a substrate (100) to obtain a mask feature dimension value; and calculating (265) a mask trim plasma etch time based on the mask feature dimension value, a mask feature dimension target value (255), a total of selected radio frequency power-on times of a plasma etch tool (180) since an event occurring to a chamber or chambers of a plasma etch tool for plasma etching the layer, and an etch bias target for a layer feature to be formed from the layer where the layer is not protected by the mask feature during a plasma etch (275) of the layer.

公开(公告)号：WO2006121563A2

公开(公告)日：2006-11-16

申请号：PCT/US2006013562

申请日：2006-04-12

Applicant: IBM ,  RANADE RAJIV M ,  MAGTOTO TERESITA Q ,  BEHM GARY W

Inventor： RANADE RAJIV M ,  MAGTOTO TERESITA Q ,  BEHM GARY W

IPC: G01L21/30 ,  C23F1/00

CPC classification number: H01J37/32082 ,  H01J37/32935

Abstract: A method and system for controlling a dimension of an etched feature (150). The method includes: measuring a mask feature (145) formed on a top surface of a layer (110) on a substrate (100) to obtain a mask feature dimension value; and calculating (265) a mask trim plasma etch time based on the mask feature dimension value, a mask feature dimension target value (255), a total of selected radio frequency power-on times of a plasma etch tool (180) since an event occurring to a chamber or chambers of a plasma etch tool for plasma etching the layer, and an etch bias target for a layer feature to be formed from the layer where the layer is not protected by the mask feature during a plasma etch (275) of the layer.

Abstract translation: 一种用于控制蚀刻特征（150）的尺寸的方法和系统。 该方法包括：测量形成在衬底（100）上的层（110）的顶表面上的掩模特征（145）以获得掩模特征尺寸值; 以及基于掩模特征尺寸值计算（265）掩模修剪等离子体蚀刻时间，掩模特征尺寸目标值（255），自事件以来的等离子体蚀刻工具（​​180）的所选射频加电时间的总和 发生在用于等离子体蚀刻该层的等离子体蚀刻工具的室或腔室中，以及用于在层的等离子体蚀刻（275）期间由层不被掩模特征保护的层形成的层特征的蚀刻偏置目标 层。