Abstract:
This invention provides a continuous display with non-uniform pixel density, forming a foveated display. A single, continuous display has a higher pixel density at the center of the display than at the periphery of the display. Where two continuous displays are used in accordance with the present invention, the central forward gaze of the viewer's image will be displayed in high resolution while the leftmost portion of the left eye display will be in low resolution and the rightmost portion of the right eye display will be in low resolution. The pixel resolution of the visual display may correspond to the visual acuity of the human eye. A foveated image display system using a continuous display with non-uniform pixel density increases the field of view while reducing the image bandwidth. A foveated image display system may be hardware-based by employing anamorphic lenses or sensors rather than relying upon image interpolation to modify the resolution of the resultant image data communicated to the continuous display with non-uniform pixel density.
Abstract:
The present invention provides for an improved electromagnetic radiation detector having a micromachined electrostatic chopper/shutter device. The MEMS flexible film chopper/shutter device provides reliability, efficiency, noise reduction and temperature fluctuation compensation capabilities to the associated electromagnetic radiation detector. An electromagnetic radiation detector having an electrostatic chopper/shutter device includes a detector material element and flexible film actuator overlying the detector material layer and moveable relative thereto. The flexible film actuator will typically include an electrode element and a biasing element such that the actuator remains in a fully curled, open state absent electrostatic voltage and moves to a fully uncurled, closed state upon the application of electrostatic voltage. Arrays that incorporate a plurality of electromagnetic radiation detectors and/or electrostatic shuttering devices are additionally provided for.
Abstract:
Adaptive methods and systems for applying a channel correction factor to received signals to correct errors caused by channel distortion. The channel correction factor is dynamically calculated and updated based on the received signal or signals. A receiver continuously calculates an error factor representing a deviation of the received signal from the signal being transmitted, and generates the channel correction factor based on the error factor. Since the error factor includes information related to channel distortions, the channel correction factor so calculated adapts to the change of channel characteristics. If preferred, an advanced algorithm can be used to predict the channel response for the next incoming signal such that the receiver can correct channel errors on a substantially real-time basis.
Abstract:
A three dimensional photonic crystal (150) and layer-by-layer processes of fabricating the photonic crystal. A templated substrate (100) is exposed to a plurality of first microspheres made of a first material, the first material being of a type that will bond to the templated substrate and form a self-passivated layer of first microspheres to produce a first layer (110). The first layer (110) is exposed to a plurality of second microspheres made of a second material, the second material being of a type that will bond to the first layer (110) and form a self-passivated layer of second microspheres (134). This layering of alternatng first and second microspheres can be repeated as desired to build a three dimensional photonic crystal of desired geometry.
Abstract:
An improved through-via vertical interconnect, through-via heat sinks and associated fabrication techniques are provided for. The devices benefit from an organic dielectric layer (18) that allows for low-temperature deposition processing. The low-temperature processing used to form the through-via interconnects and heat sinks allows for the formation of the interconnects and heat sinks at any point in the fabrication of the semiconductor device, including post-formation of active devices and associated circuitry. The through-via vertical interconnects of the present invention are fabricated so as to insure conformal thickness of the various layers that form the interconnect constructs. As such, the interconnects can be formed with a high aspect ratio, in the range of about 4:1 to about 10:1, substrate thickness to interconnect diameter.