公开(公告)号：WO2012153112A3

公开(公告)日：2013-01-03

申请号：PCT/GB2012050980

申请日：2012-05-04

Applicant: UNIV WARWICK ,  SHAH VISHAL AJIT ,  MYRONOV MAKSYM

Inventor： SHAH VISHAL AJIT ,  MYRONOV MAKSYM

IPC: B81C1/00

CPC classification number: B81C1/00158 ,  B81C2201/017 ,  B81C2201/0177 ,  H01L21/3081

Abstract: A semiconductor structure comprises a frame (24) provided by a monocrystalline substrate comprising a first semiconductor material and having a window passing through the substrate between first and second opposite surfaces of the substrate; and a monocrystalline membrane (4) over the window provided by a layer supported directly on the first surface of the substrate, the membrane comprising a second, different semiconductor material which is under tensile strain.

Abstract translation: 半导体结构包括由单晶衬底提供的框架（24），所述单晶衬底包括第一半导体材料并且具有穿过所述衬底的窗口，所述窗口在所述衬底的第一和第二相对表面之间; 以及由直接支撑在所述基板的第一表面上的层提供的窗口上的单晶膜（4），所述膜包括处于拉伸应变的第二不同的半导体材料。

公开(公告)号：WO2012153112A2

公开(公告)日：2012-11-15

申请号：PCT/GB2012/050980

申请日：2012-05-04

Applicant: THE UNIVERSITY OF WARWICK ,  SHAH, Vishal Ajit ,  MYRONOV, Maksym

Inventor： SHAH, Vishal Ajit ,  MYRONOV, Maksym

IPC: B81C1/00

CPC classification number: B81C1/00158 ,  B81C2201/017 ,  B81C2201/0177 ,  H01L21/3081

Abstract: A semiconductor structure comprises a frame (24) provided by a monocrystalline substrate comprising a first semiconductor material and having a window passing through the substrate between first and second opposite surfaces of the substrate; and a monocrystalline membrane (4) over the window provided by a layer supported directly on the first surface of the substrate, the membrane comprising a second, different semiconductor material which is under tensile strain.

Abstract translation: 半导体结构包括由单晶衬底提供的框架（24），所述单晶衬底包括第一半导体材料并且具有穿过所述衬底的窗口，所述窗口在所述衬底的第一和第二相对表面之间; 以及由直接支撑在所述基板的第一表面上的层提供的窗口上的单晶膜（4），所述膜包括处于拉伸应变的第二不同的半导体材料。