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1.发明授权Sol-gel deposition of buffer layers on biaxially textured metal substances 失效缓冲层在双轴织构金属物质上的溶胶 - 凝胶沉积
公开(公告)号：US6077344A
公开(公告)日：2000-06-20
申请号：US922173
申请日：1997-09-02
Applicant: Shara S. Shoup , Mariappan Paranthamam , David B. Beach , Donald M. Kroeger , Amit Goyal
Inventor： Shara S. Shoup , Mariappan Paranthamam , David B. Beach , Donald M. Kroeger , Amit Goyal
IPC: C21D8/12 , C23C14/02 , C23C18/12 , C30B5/00 , C30B23/02 , C30B25/02 , H01L39/24 , C30B1/02 , B05D1/36 , B05D3/02
CPC classification number: H01L39/2461 , C21D8/12 , C23C14/028 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1254 , C23C18/1275 , C23C18/1279 , C30B23/02 , C30B25/02 , C30B29/16 , C30B29/22 , C30B5/00 , C21D2201/04 , C21D2201/05
Abstract: A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.
Abstract translation: 公开了一种通过使用溶胶 - 凝胶涂覆技术在还原气氛中进行热解/退火来在双轴取向金属基材上形成双轴织构化缓冲层的方法。 该方法有利于提供用于在其上沉积电子活性材料的衬底。
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公开(公告)号：US06235402B1
公开(公告)日：2001-05-22
申请号：US09248300
申请日：1999-02-11
Applicant: Shara S. Shoup , Mariappan Paranthamam , David B. Beach , Donald M. Kroeger , Amit Goyal
Inventor： Shara S. Shoup , Mariappan Paranthamam , David B. Beach , Donald M. Kroeger , Amit Goyal
IPC: B32B1504
CPC classification number: H01L39/2461 , C21D8/12 , C21D2201/04 , C21D2201/05 , C23C14/028 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1254 , C23C18/1275 , C23C18/1279 , C30B5/00 , C30B23/02 , C30B25/02 , C30B29/16 , C30B29/22
Abstract: A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.
Abstract translation: 公开了一种通过使用溶胶 - 凝胶涂覆技术在还原气氛中进行热解/退火来在双轴取向金属基材上形成双轴织构化缓冲层的方法。 该方法有利于提供用于在其上沉积电子活性材料的衬底。
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