公开(公告)号：US09200273B2

公开(公告)日：2015-12-01

申请号：US13628393

申请日：2012-09-27

Applicant: Michael Diem ,  Steven Jacobs

Inventor： Michael Diem ,  Steven Jacobs

IPC: C40B50/06 ,  C12N15/10 ,  C40B40/08

CPC classification number: G01N33/6845 ,  C12N15/1044 ,  C40B30/04 ,  C40B40/08 ,  C40B50/06 ,  G01N2333/78

Abstract: Protein scaffolds and scaffold libraries based on a fibronectin type III (FN3) repeat with an alternative binding surface design, isolated nucleic acids encoding the protein scaffolds, vectors, host cells, and methods of making thereof are useful in the generation of therapeutic molecules and treatment and diagnosis of diseases and disorders.

Abstract translation: 基于具有替代结合表面设计的纤连蛋白III型（FN3）重复的蛋白质支架和支架文库，编码蛋白质支架的分离的核酸，载体，宿主细胞及其制备方法可用于产生治疗分子和治疗 和疾病和病症的诊断。

公开(公告)号：US20110294748A1

公开(公告)日：2011-12-01

申请号：US13115523

申请日：2011-05-25

Applicant: Michael Diem ,  Karyn O'Neil

Inventor： Michael Diem ,  Karyn O'Neil

IPC: A61K38/16 ,  C07K14/00 ,  C07H21/04 ,  C12N15/63 ,  C07K19/00 ,  C12N5/10 ,  A61K38/10 ,  C12N1/00 ,  C12N1/21 ,  C12N1/19 ,  C12N1/15 ,  C07K7/08 ,  C12P21/02

CPC classification number: C07K7/08 ,  A61K38/00 ,  C07K14/47 ,  C07K14/7155 ,  C07K2319/02 ,  C07K2319/21 ,  C07K2319/30 ,  C07K2319/61 ,  C07K2319/70

Abstract: The present invention relates to insulin-like growth factor 1 receptor binding peptides, polynucleotides encoding them, and methods of making and using the foregoing.

Abstract translation: 本发明涉及胰岛素样生长因子1受体结合肽，编码它们的多核苷酸，以及制备和使用前述物质的方法。

公开(公告)号：US08415306B2

公开(公告)日：2013-04-09

申请号：US13115523

申请日：2011-05-25

Applicant: Michael Diem ,  Karyn O'Neil

Inventor： Michael Diem ,  Karyn O'Neil

IPC: A61K39/395 ,  A61K38/10 ,  C12P21/04 ,  C12P21/08 ,  C12N15/00 ,  C12N5/00 ,  C07H21/04

CPC classification number: C07K7/08 ,  A61K38/00 ,  C07K14/47 ,  C07K14/7155 ,  C07K2319/02 ,  C07K2319/21 ,  C07K2319/30 ,  C07K2319/61 ,  C07K2319/70

Abstract: The present invention relates to insulin-like growth factor 1 receptor binding peptides, polynucleotides encoding them, and methods of making and using the foregoing.

Abstract translation: 本发明涉及胰岛素样生长因子1受体结合肽，编码它们的多核苷酸，以及制备和使用上述物质的方法。

公开(公告)号：US20130079243A1

公开(公告)日：2013-03-28

申请号：US13628393

申请日：2012-09-27

Applicant: Michael Diem ,  Steven Jacobs

Inventor： Michael Diem ,  Steven Jacobs

IPC: C40B40/10 ,  C40B30/04 ,  C40B50/06

CPC classification number: G01N33/6845 ,  C12N15/1044 ,  C40B30/04 ,  C40B40/08 ,  C40B50/06 ,  G01N2333/78

Abstract: Protein scaffolds and scaffold libraries based on a fibronectin type III (FN3) repeat with an alternative binding surface design, isolated nucleic acids encoding the protein scaffolds, vectors, host cells, and methods of making thereof are useful in the generation of therapeutic molecules and treatment and diagnosis of diseases and disorders.

Abstract translation: 基于具有替代结合表面设计的纤连蛋白III型（FN3）重复的蛋白质支架和支架文库，编码蛋白质支架的分离的核酸，载体，宿主细胞及其制备方法可用于产生治疗分子和治疗 和疾病和病症的诊断。

公开(公告)号：US5076886A

公开(公告)日：1991-12-31

申请号：US605588

申请日：1990-10-29

Applicant: Michael Diem

Inventor： Michael Diem

IPC: C23F1/08 ,  H01L21/00

CPC classification number: H01L21/67086 ,  C23F1/08

Abstract: A method of performing a liquid etching operation on a wafer surface includes placing the wafer into an etch container, filling the etch container with a liquid etch solution, retaining the etch solution in the etch container for a short predetermined length of time, releasing the etch solution from the etch container, and then repeating the above steps without replacing the wafer, to obtain a series of short etch cycles having collectively a predictable average etch rate.

Abstract translation: 在晶片表面上执行液体蚀刻操作的方法包括将晶片放置在蚀刻容器中，用液体蚀刻溶液填充蚀刻容器，将蚀刻溶液保持在蚀刻容器中短时间的预定长度，释放蚀刻 溶液，然后重复上述步骤而不更换晶片，以获得一系列具有可预测的平均蚀刻速率的短蚀刻循环。

公开(公告)号：US4619840A

公开(公告)日：1986-10-28

申请号：US497321

申请日：1983-05-23

Applicant: Jon C. Goldman ,  Michael A. Fisk ,  Michael Diem

Inventor： Jon C. Goldman ,  Michael A. Fisk ,  Michael Diem

IPC: C23C16/16 ,  C23C16/54 ,  H01L21/285

CPC classification number: C23C16/54 ,  H01L21/28556 ,  Y10S438/935

Abstract: A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.

Abstract translation: 用于在硅晶片上的诸如钨的难熔金属的低压，冷壁，化学气相沉积的方法和装置。 将硅晶片引入装载锁中，其中压力降低至低于大气压。 将硅晶片转移到沉积室，在其中将其加热到升高的温度。 将难熔金属羰基蒸气引入沉积室中并解离以在硅晶片上沉积难熔金属。 将晶片转移到卸载锁上，在其中允许其冷却，然后将其移除。

公开(公告)号：US4726961A

公开(公告)日：1988-02-23

申请号：US874754

申请日：1986-06-16

Applicant: Michael Diem ,  Michael A. Fisk ,  Jon C. Goldman

Inventor： Michael Diem ,  Michael A. Fisk ,  Jon C. Goldman

IPC: C23C16/54 ,  H01L21/285 ,  B05D5/12 ,  C23C16/00

CPC classification number: C23C16/54 ,  H01L21/28556 ,  Y10S438/935

Abstract: A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.

Abstract translation: 用于在硅晶片上的诸如钨的难熔金属的低压，冷壁，化学气相沉积的方法和装置。 将硅晶片引入装载锁中，其中压力降低至低于大气压。 将硅晶片转移到沉积室，在其中将其加热到升高的温度。 将难熔金属羰基蒸气引入沉积室中并解离以在硅晶片上沉积难熔金属。 将晶片转移到卸载锁上，在其中允许其冷却，然后将其移除。

公开(公告)号：US4817557A

公开(公告)日：1989-04-04

申请号：US92967

申请日：1987-09-04

Applicant: Michael Diem ,  Michael A. Fisk ,  Jon C. Goldman

Inventor： Michael Diem ,  Michael A. Fisk ,  Jon C. Goldman

IPC: C23C16/54 ,  H01L21/285 ,  C23C16/00

CPC classification number: C23C16/54 ,  H01L21/28556

Abstract: A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.

Abstract translation: 用于在硅晶片上的诸如钨的难熔金属的低压，冷壁，化学气相沉积的方法和装置。 将硅晶片引入装载锁中，其中压力降低至低于大气压。 将硅晶片转移到沉积室，在其中将其加热到升高的温度。 将难熔金属羰基蒸气引入沉积室中并解离以在硅晶片上沉积难熔金属。 将晶片转移到卸载锁上，在其中允许其冷却，然后将其移除。