Abstract:
A detection circuit includes a current mirror circuit, a pyroelectric element, a capacitor element and a charging circuit. The pyroelectric element is disposed between a first power supply node and a first node connected to the current mirror circuit. The capacitor element is disposed between the first power supply node and a second node connected to the current mirror circuit. The charging circuit is connected to the current mirror circuit to charge the pyroelectric element and the capacitor element though the current mirror circuit.
Abstract:
A thermal detector has a thermal detection element in which a physical characteristic changes based on temperature, a light-absorbing member configured and arranged to collect heat and transmit collected heat to the thermal detection element, a support member mounting the thermal detection element on a first side with a second surface facing a cavity, and a support part supporting a portion of the support member. The light-absorbing member is a plate shaped member at least partially contacting a top part of the thermal detection element and having a portion overhanging to an outside from the top part of the thermal detection element in plan view.
Abstract:
A thermal detector has a thermal detection element in which a physical characteristic changes based on temperature, a light-absorbing member configured and arranged to collect heat and transmit collected heat to the thermal detection element, a support member mounting the thermal detection element on a first side with a second surface facing a cavity, and a support part supporting a portion of the support member. The light-absorbing member is a plate shaped member at least partially contacting a top part of the thermal detection element and having a portion overhanging to an outside from the top part of the thermal detection element in plan view.
Abstract:
A ferroelectric memory device includes: a plurality of bit lines; a plurality of memory cells connected to each of the plurality of bit lines, and each storing “0” data with a smaller amount of readout charge or “1” data with a greater amount of readout charge according to a polarization state; a plurality of data lines; a plurality of charge transfer circuits that connect the plurality of bit lines to the plurality of data lines, respectively, based on a potential on each of the bit lines; a capacitor connected to each of the plurality of data lines for storing negative charge; a positive charge canceling circuit that pulls out positive charge corresponding to the amount of “0” data readout charge from each of the plurality of bit lines; and a sense amplifier that judges data read out from the memory cells.
Abstract:
A ferroelectric memory device characterized in comprising: a voltage source for generating a predetermined voltage; a first bit line and a second bit line; a first ferroelectric capacitor having one end electrically connected to the first bit line; a first resistance provided between the first bit line and the voltage source; a second ferroelectric capacitor having one end electrically connected to the second bit line; a second resistance provided between the second bit line and the voltage source; and a sense amplifier that judges data written in the first ferroelectric capacitor based on a potential on the first bit line, according to a timing at which a potential on the second bit line changes when the predetermined voltage is supplied to the first bit line and the second bit line.
Abstract:
A ferroelectric memory device equipped with: a voltage source for generating a predetermined voltage; a first ferroelectric capacitor having one end electrically connected to a first bit line; a first resistance having a first resistance value, provided between the first bit line and the voltage source; a second ferroelectric capacitor having one end electrically connected to a second bit line; a second resistance having a second resistance value different from the first resistance value, provided between the second bit line and the voltage source; and a sense amplifier that judges data written in the first ferroelectric capacitor by comparing a potential on the first bit line with a potential on the second bit line when the predetermined voltage is supplied to the first bit line and the second bit line.
Abstract:
A ferroelectric memory is provided including a ferroelectric capacitor having an end electrically coupled to a bit line; a power source generating a predetermined voltage; a resistance formed between the bit line and the power source; and a switch installed in series with the resistor, and switching whether a predetermined voltage is applied to the bit line via the resistor or not. The voltage source preferably generates a driving voltage driving the ferroelectric memory, a voltage between the resistive voltage of the ferroelectric capacitor and the driving voltage driving the ferroelectric memory, or a voltage that is less than the coercive voltage of the ferroelectric capacitor.
Abstract:
A ferroelectric memory device that is equipped with a cell array provided with a plurality of memory cells each having a first ferroelectric capacitor and a second ferroelectric capacitor that are connected to each other in series, a memory cell selection section that selects a specified one of the plurality of memory cells, a potential difference generation section that gives a potential difference across one end and another end of the selected memory cell, and a judging section that judges memory data stored in the memory cell based on a potential at a connection node between the first ferroelectric capacitor and the second ferroelectric capacitor when the potential difference is given to the memory cell.
Abstract:
A ferroelectric memory device, in which wordlines and bitlines are hierarchized and influence of disturbance-noise is reduced, includes: first sub-wordline select switches, each of which are disposed between one of the main-wordlines and one end of one of the sub-wordlines provided for the one main-wordline; first sub-bitline select switches, each of which are disposed between one of the main-bitlines and one end of one of the sub-bitlines provided for the one main-bitline; second sub-wordline select switches, each of which are disposed between the other end of one of the sub-wordlines and the unselected wordline potential supply line; and second sub-bitline select switches, each of which are disposed between the other end of one of the sub-bitlines and the unselected bitline potential supply line, each of the first and second sub-wordline select switches and first and second sub-bitline select switches being driven independently at least in one of the sector regions.
Abstract:
A detection circuit for a heat sensor includes a charge circuit provided between a second power supply node and a detection node of a heat sensing element, and a discharge circuit provided between the detection node and a first power supply node. The discharge circuit has a discharge resistance element and a discharge transistor provided in series between the detection node and the first power supply node.