公开(公告)号：WO2009128800A1

公开(公告)日：2009-10-22

申请号：PCT/US2008/004983

申请日：2008-04-17

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS ,  NAYEEH, Munir, H. ,  SHAMS, Sommaya ,  NAYFEH, Osama, M. ,  ANTONIADIS, Dimitri ,  MANTEY, Kevin

Inventor： NAYEEH, Munir, H. ,  SHAMS, Sommaya ,  NAYFEH, Osama, M. ,  ANTONIADIS, Dimitri ,  MANTEY, Kevin

IPC: H01L21/8234

CPC classification number: H01L29/16 ,  B82Y10/00 ,  C30B29/06 ,  C30B29/60 ,  H01L21/30604 ,  H01L21/30608 ,  H01L29/0665 ,  H01L29/0673

Abstract: The invention provides a method for forming silicon nanowires and composites in polymers. In a preferred method of the invention, a device quality silicon layer that is on a silicon on oxide substrate is etched with an HF/silver nitrate etching solution to form silicon nanowires attached to an oxide layer of the silicon on oxide substrate. A silver film that forms during the etching is easily removed. The nanowires are released from the surface of the oxide via a brief HF acid treatment and gentle agitation. Uniform length nanowires form having a length that is equal to the thickness of the device quality silicon layer. The nanowires that form have pure crystalline silicon structure with no bulk contamination, and any residual silver on the surface of the nanowires after fabrication can be easily removed by selective etching.

Abstract translation: 本发明提供一种在聚合物中形成硅纳米线和复合材料的方法。 在本发明的优选方法中，用HF /硝酸银蚀刻溶液蚀刻在氧化物衬底上的硅上的器件质量硅层，以形成附着到氧化物衬底上的氧化硅层的氧化物层的硅纳米线。 在蚀刻期间形成的银膜容易去除。 通过短暂的HF酸处理和温和搅拌，从氧化物的表面释放纳米线。 长度均匀的纳米线长度等于器件质量硅层的厚度。 形成的纳米线具有没有体积污染的纯晶体硅结构，并且可以通过选择性蚀刻容易地去除制造后的纳米线表面上的任何残留的银。

公开(公告)号：WO2004077526A2

公开(公告)日：2004-09-10

申请号：PCT/US2004/005643

申请日：2004-02-25

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS ,  NAYFEH, Munir, H. ,  NAYFEH, Osama, M.

Inventor： NAYFEH, Munir, H. ,  NAYFEH, Osama, M.

IPC: H01L

CPC classification number: C01B33/02 ,  B82Y30/00 ,  G01J1/04 ,  G01J1/0407 ,  G01J1/429 ,  H01L31/035281 ,  H01L31/115 ,  H01S3/163 ,  H01S5/041 ,  H01S5/10 ,  H01S5/30 ,  H01S5/3031 ,  Y02E10/50

Abstract: A UV detector (10) has a UV detection thin film of coated spherical silicon nanoparticles formed upon a substrate (12). The detector includes structures to bias the thin film. In preferred embodiments, a thin conductor (18) that is at least semi-transparent to UV radiation is formed over the thin film. In preferred embodiments, the UV detector is formed as a silicon based integration, upon a device quality silicon wafer (40).

Abstract translation: UV检测器（10）具有形成在衬底（12）上的涂覆的球形硅纳米颗粒的UV检测薄膜。 检测器包括偏置薄膜的结构。 在优选实施例中，在薄膜上形成对UV辐射至少半透明的细导体（18）。 在优选的实施例中，UV器件在器件质量硅晶片（40）上形成为基于硅的集成。

公开(公告)号：WO2004077526A3

公开(公告)日：2005-12-01

申请号：PCT/US2004005643

申请日：2004-02-25

Applicant: UNIV ILLINOIS ,  NAYFEH MUNIR H ,  NAYFEH OSAMA M

Inventor： NAYFEH MUNIR H ,  NAYFEH OSAMA M

IPC: B82B3/00 ,  C01B33/02 ,  C01B33/021 ,  C25F3/12 ,  G01J1/04 ,  G01J1/42 ,  G02B6/02 ,  G02B6/10 ,  H01L29/06 ,  H01L29/66 ,  H01L31/0352 ,  H01L31/115 ,  H01S3/16 ,  H01S5/04 ,  H01S5/10 ,  H01S5/30 ,  G01T1/18 ,  H01J47/02 ,  H01J47/06 ,  H01J47/08 ,  H01L21/00

CPC classification number: C01B33/02 ,  B82Y30/00 ,  G01J1/04 ,  G01J1/0407 ,  G01J1/429 ,  H01L31/035281 ,  H01L31/115 ,  H01S3/163 ,  H01S5/041 ,  H01S5/10 ,  H01S5/30 ,  H01S5/3031 ,  Y02E10/50

Abstract: A UV detector (10) has a UV detection thin film of coated spherical silicon nanoparticles formed upon a substrate (12). The detector includes structures to bias the thin film. In preferred embodiments, a thin conductor (18) that is at least semi-transparent to UV radiation is formed over the thin film. In preferred embodiments, the UV detector is formed as a silicon based integration, upon a device quality silicon wafer (40).

Abstract translation: UV检测器（10）具有形成在衬底（12）上的涂覆的球形硅纳米颗粒的UV检测薄膜。 检测器包括偏置薄膜的结构。 在优选实施例中，在薄膜上形成对UV辐射至少半透明的细导体（18）。 在优选的实施例中，UV器件在器件质量硅晶片（40）上形成为基于硅的集成。