公开(公告)号：CA2398377A1

公开(公告)日：2001-08-02

申请号：CA2398377

申请日：2001-01-24

Applicant: JAPAN SCIENCE & TECH CORP ,  ORITA MASAHIRO ,  OTA HIROMICHI

Inventor： ORITA MASAHIRO ,  OTA HIROMICHI ,  KAWAMURA KENICHI ,  SARUKURA NOBUHIKO ,  HIRANO MASAHIRO ,  HOSONO HIDEO

IPC: H01L21/363 ,  H01L33/20 ,  H01L33/28 ,  H01L33/42 ,  H01S5/042 ,  H01S5/327 ,  H01L33/00

Abstract: It has been confirmed that an n type ZnO film formed on an SrCu2O2 film will produce diode characteristics, without light emitting from a diode confirmed . A semiconductor ultraviolet luminous element characterized by comprising a p -n junction formed by laminating one of p-type semiconductors, respectively consisting of SrCu2O2, CuAlO2 or CuGaO2, on an n-type ZnO layer laminated on a transparent substrate and indicating luminous characteristics. The transpare nt substrate is preferably a single crystal substrate, especially, yttria partially stabilized zirconia (YSZ) (111) substrate flattened in an atomic state. An n-type ZnO film is formed on a transparent substrate at a substrat e temperature of 200-1200~C, and a p-type semiconductor layer consisting of SrCu2O2, CuAlO2 or CuGaO2 is further formed on the film. It may also be possible to form an n-type ZnO film, without heating a substrate, and irradiate the surface of the ZnO film with ultraviolet light to promote crystallization.

公开(公告)号：CA2398377C

公开(公告)日：2006-04-11

申请号：CA2398377

申请日：2001-01-24

Applicant: JAPAN SCIENCE & TECH CORP ,  ORITA MASAHIRO ,  OTA HIROMICHI

Inventor： HIRANO MASAHIRO ,  SARUKURA NOBUHIKO ,  ORITA MASAHIRO ,  HOSONO HIDEO ,  OTA HIROMICHI ,  KAWAMURA KENICHI

IPC: H01L21/363 ,  H01L33/20 ,  H01L33/28 ,  H01L33/42 ,  H01S5/042 ,  H01S5/327

Abstract: An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-typ e semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 an d CuGaO2, which is formed on the n-type ZnO layer to provide a p-n juncti on therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n - type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200.degree.C, and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO 2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be form ed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.

公开(公告)号：EP1306858A1

公开(公告)日：2003-05-02

申请号：EP01947918.7

申请日：2001-07-09

Applicant: JAPAN SCIENCE AND TECHNOLOGY CORPORATION ,  Ota, Hiromichi ,  Orita, Masahiro

Inventor： OTA, Hiromichi ,  ORITA, Masahiro ,  HOSONO, Hideo ,  HIRANO, Masahiro

IPC: H01B5/14 ,  C01G15/00 ,  C23C14/08 ,  C23C16/40 ,  C30B29/16

CPC classification number: C30B23/02 ,  C23C14/08 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L31/022466 ,  H01L31/1884 ,  H01L33/42 ,  H01L51/0021 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: The present invention provides an ultraviolet-transparent conductive film comprising a Ga 2 O 3 crystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga 2 O 3 crystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, spattering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500°C and an oxygen partial pressure of 0 to 1 Pa.

Abstract translation: 本发明提供了包含Ga 2 O 3晶体的紫外线透明导电膜。 该膜在240至800nm或240至400nm的波长范围内具有透明度，以及由Ga 2 O 3晶体中的缺氧或掺杂剂引起的电导率。 掺杂剂包括选自由Sn，Ge，Si，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo和W组成的组中的至少一种元素。紫外线透明导电膜通过 脉冲激光沉积法，溅射法，CVD法和MBE法，在基板温度为600〜1500℃，氧分压为0〜1Pa的条件下进行。

公开(公告)号：JP2002280306A

公开(公告)日：2002-09-27

申请号：JP2001081454

申请日：2001-03-21

Applicant: JAPAN SCIENCE & TECH CORP ,  ORITA MASAHIRO ,  OTA HIROMICHI ,  IRIE KOKEN KK ,  KATAGIRI ENGINEERING KK ,  SHOWA YOZAI KK

Inventor： ORITA MASAHIRO ,  OTA HIROMICHI ,  HIRANO MASAHIRO ,  HOSONO HIDEO ,  DEN SHOJI ,  KATAGIRI TOSHIRO ,  MIMURA SO

IPC: G01N23/20 ,  C23C14/28 ,  C23C14/50 ,  G01N23/203 ,  H01L21/203

Abstract: PROBLEM TO BE SOLVED: To provide a substrate-rotating and heating device which can heat a board stably to an ultrahigh temperature range and also can rotate the substrate stably, and a film growth device using it, and to provide an analyzer. SOLUTION: This substrate-rotating and heating device is equipped with a rotary mechanism (10) which retains the substrate (9) and also turns the substrate (9), using the first rotary shaft (9C), piercing the surface (9A) of the substrate vertically as the axis, so as to deposit a thin film uniformly on the surface (9A) of the substrate (9) or for analyzing the thin film formed on the surface (9A) of the substrate, and a light guide bar (1) which pierces the first rotary shaft (9C) of the rotary mechanism (10) and applies the infrared rays emitted from an infrared ray source (15) to the rear (9B) of the substrate (9).

公开(公告)号：JP2002093243A

公开(公告)日：2002-03-29

申请号：JP2001182643

申请日：2001-06-15

Applicant: JAPAN SCIENCE & TECH CORP ,  OTA HIROMICHI ,  ORITA MASAHIRO

Inventor： ORITA MASAHIRO ,  OTA HIROMICHI ,  HIRANO MASAHIRO ,  HOSONO HIDEO

IPC: C23C14/08 ,  C23C16/40 ,  C30B23/02 ,  C30B25/02 ,  H01B5/14 ,  H01B13/00 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/18 ,  H01L51/00 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To provide an ultraviolet transparent conducive film capable of enough transmitting blue light near 400 nm and ultraviolet rays of shorter wavelength, and useful as a transparent electrode for ultraviolet emitting device, a transparent electrode for ultraviolet sunlight power generation, a transparent electrode for biological material analysis, and an anti-static film for ultraviolet laser machining. SOLUTION: This ultraviolet transparent conductive film is characterized in that it is formed of Ga2O3 crystal, it is transparent in the range of wavelength from 240 nm to 800 nm, or wavelength from 240 nm to 400 nm, and electric conductivity is provided by oxygen defect or dopant element. At least one of Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W is taken as dopant. The above film is manufactured at base plate temperature of 600 to 1500 deg.C, the oxygen partial pressure of 0 to 1 Pa, and one method selected from a pulse laser evaporation method, a sputtering method, a CVD method and an MBE method.

公开(公告)号：JP2003137692A

公开(公告)日：2003-05-14

申请号：JP2001340066

申请日：2001-11-05

Applicant: JAPAN SCIENCE & TECH CORP ,  ORITA MASAHIRO ,  OTA HIROMICHI

Inventor： HOSONO HIDEO ,  UEDA KAZUSHIGE ,  ORITA MASAHIRO ,  OTA HIROMICHI ,  HIRANO MASAHIRO

IPC: C30B29/22

Abstract: PROBLEM TO BE SOLVED: To solve the problem that the evaporation of ZnO having high vapor pressure occurs vigorously, thereby making it difficult to control the composition, and homogeneous superlattice cannot be formed when a homologous series M M O3 (ZnO)m is grown by a thin film growth method. SOLUTION: The natural superlattice homologous single crystal thin film comprises double oxides which are epitaxilally grown on a ZnO epitaxial thin film formed on a single crystal substrate or the single crystal substrate from which the thin film has disappeared or a ZnO single crystal and is expressed by formula: M M O3 (ZnO)m (wherein, M is at lest one of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y; M is at least one of Mn, Fe, Ga, In and Al; and m is a natural number which is >=1). The homologous single crystal thin film is manufactured by depositing the double oxide films and subjecting the stacked films to heat-diffusion treatment. The natural superlattice homologous single crystal thin film is used for an optical device, an electronic device, an X-ray optical device of the like.

公开(公告)号：EP1306858A4

公开(公告)日：2004-09-29

申请号：EP01947918

申请日：2001-07-09

Applicant: JAPAN SCIENCE & TECH AGENCY ,  OTA HIROMICHI ,  ORITA MASAHIRO

Inventor： OTA HIROMICHI ,  ORITA MASAHIRO ,  HOSONO HIDEO ,  HIRANO MASAHIRO

IPC: C23C14/08 ,  C23C16/40 ,  C30B23/02 ,  C30B25/02 ,  H01B5/14 ,  H01B13/00 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/18 ,  H01L51/00 ,  H01L51/40 ,  C01G15/00 ,  C30B29/16

CPC classification number: C30B23/02 ,  C23C14/08 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L31/022466 ,  H01L31/1884 ,  H01L33/42 ,  H01L51/0021 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3 crystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3 crystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, spattering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500 DEG C and an oxygen partial pressure of 0 to 1 Pa.

公开(公告)号：JP2001210864A

公开(公告)日：2001-08-03

申请号：JP2000024843

申请日：2000-01-28

Applicant: JAPAN SCIENCE & TECH CORP ,  OTA HIROMICHI ,  ORITA MASAHIRO

Inventor： HOSONO HIDEO ,  OTA HIROMICHI ,  ORITA MASAHIRO ,  KAWAMURA KENICHI ,  SARUKURA NOBUHIKO ,  HIRANO MASAHIRO

IPC: H01L21/363 ,  H01L33/20 ,  H01L33/28 ,  H01L33/42 ,  H01S5/042 ,  H01S5/327 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To solve a problem that the appearance of a diode characteristic can be recognized but light emission from a diode cannot be recognized by forming n-type ZnO on an SrCu2O2. SOLUTION: A semiconductor ultraviolet emitting element is formed by laminating one of p-type semiconductors constituted of ArCu2O2, CuAlO2 or CuGaO2 on an n-type ZnO layer which is laminated on a transparent substrate and shows a light emitting characteristic and it is constituted of p-n junction. A single crystal substrate, especially an yttria part stabilized zirconia(YSZ) (111) substrate which is planarized into an atom shape is suitable for the transparent substrate. N-type ZnO is formed on the transparent substrate at a substrate temperature 200 to 1200 deg.C. Then a p-type semiconductor layer constituted of SrCu2, CuAlO2 or CuGaO2 is formed on it. Then, n-type ZnO is formed without heating the substrate, the surface of the ZnO film is irradiated with ultraviolet beams and crystallization can be advanced.

公开(公告)号：JP2002025349A

公开(公告)日：2002-01-25

申请号：JP2000205941

申请日：2000-07-06

Applicant: JAPAN SCIENCE & TECH CORP ,  OTA HIROMICHI ,  ORITA MASAHIRO

Inventor： OTA HIROMICHI ,  ORITA MASAHIRO ,  HOSONO HIDEO ,  HIRANO MASAHIRO

IPC: H05B33/28 ,  C23C14/08 ,  C23C16/40 ,  H01B5/14 ,  H01B13/00 ,  H01L21/28 ,  H01L21/285 ,  H01L33/28 ,  H01L33/42 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a super flat transparent conductive film which can improve the characteristics of a transparent electrode for an organic EL display, an oxide LED, and LD. SOLUTION: The super flat transparent conductive film like ITO, characterized by the average surface roughness of 1 nm or less, is formed on a super flat glass substrate or on a crystalline substrate, for example, on a YSZ single crystal substrate, and has a terrace-step structure reflecting the crystal structure of the transparent conductive film material. When the film is formed by one method of either pulse-laser evaporation method, sputtering method, CVD method, MO-CDV method, or MBE method, the substrate is kept in the temperature of 800 deg.C-1500 deg.C. By removing an assist of energy except heat or undesirable substance adsorbed on the surface, the temperature can be kept in 800 deg.C or less.

公开(公告)号：EP1258928A4

公开(公告)日：2008-10-01

申请号：EP01946982

申请日：2001-01-24

Applicant: JAPAN SCIENCE & TECH AGENCY ,  OTA HIROMICHI ,  ORITA MASAHIRO

Inventor： OTA HIROMICHI ,  ORITA MASAHIRO ,  HOSONO HIDEO ,  KAWAMURA KENICHI ,  SARUKURA NOBUHIKO ,  HIRANO MASAHIRO

IPC: H01L21/363 ,  H01L33/20 ,  H01L33/28 ,  H01L33/42 ,  H01S5/042 ,  H01S5/327 ,  H01L33/00

CPC classification number: H01L33/26 ,  H01L33/0087 ,  H01L33/285 ,  H01S5/0425 ,  H01S5/327 ,  H01S2302/00

Abstract: It has been confirmed that an n type ZnO film formed on an SrCu2O2 film will produce diode characteristics, without light emitting from a diode confirmed. A semiconductor ultraviolet luminous element characterized by comprising a p-n junction formed by laminating one of p-type semiconductors, respectively consisting of SrCu2O2, CuAlO2 or CuGaO2, on an n-type ZnO layer laminated on a transparent substrate and indicating luminous characteristics. The transparent substrate is preferably a single crystal substrate, especially, yttria partially stabilized zirconia (YSZ) (111) substrate flattened in an atomic state. An n-type ZnO film is formed on a transparent substrate at a substrate temperature of 200-1200°C, and a p-type semiconductor layer consisting of SrCu2O2, CuAlO2 or CuGaO2 is further formed on the film. It may also be possible to form an n-type ZnO film, without heating a substrate, and irradiate the surface of the ZnO film with ultraviolet light to promote crystallization.