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    SEMICONDUCTOR PARTICLE AND METHOD OF MANUFACTURE THEREOF
    1.
    发明申请
    SEMICONDUCTOR PARTICLE AND METHOD OF MANUFACTURE THEREOF 审中-公开
    半导体颗粒及其制造方法

    公开(公告)号：WO2012168790A1

    公开(公告)日：2012-12-13

    申请号：PCT/IB2012/001182

    申请日：2012-05-31

    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  OSAKA CITY UNIVERSITY ,  AWANO, Hiroki ,  SAKI, Takenobu ,  KIM, Dae, Gwi

    Inventor： AWANO, Hiroki ,  SAKI, Takenobu ,  KIM, Dae, Gwi

    IPC: H01L21/02 ,  H01L21/368

    CPC classification number: H01L21/02568 ,  H01L21/02601 ,  H01L21/02628

    Abstract: A method of manufacturing semiconductor particles includes: preparing a cation mixture by mixing together a copper ion source, a zinc ion source, a tin ion source, a ligand which suppresses bonding reactions between ions, and water (S I); preparing a precursor solution by mixing the prepared cation mixture with a sulfur ion source (S2); placing the prepared precursor solution in a vessel and sealing the vessel containing the precursor solution (S3); and generating a hydrothermal synthesis reaction in the sealed vessel (S4). The semiconductor particles include copper, zinc, tin and sulfur, are observed in X-ray diffraction analysis to have single-phase peaks, and have a particle size equal to or lower than 100 nm.

    Abstract translation: 制造半导体颗粒的方法包括：通过将铜离子源，锌离子源，锡离子源，抑制离子之间的结合反应的配体和水（S I）混合在一起来制备阳离子混合物; 通过将制备的阳离子混合物与硫离子源（S2）混合来制备前体溶液; 将制备的前体溶液置于容器中并密封含有前体溶液的容器（S3）; 并在密封容器中产生水热合成反应（S4）。 半导体颗粒包括铜，锌，锡和硫，在X射线衍射分析中观察到具有单相峰，并且具有等于或低于100nm的粒度。

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