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公开(公告)号:WO2008141863A3
公开(公告)日:2009-03-05
申请号:PCT/EP2008054205
申请日:2008-04-08
Applicant: IBM , KRAUSE RAINER KLAUS , PFEIFFER GERD , MUEHGE THORSTEN , EICKELMANN HANS-JUERGEN , HAAG MICHAEL , SCHMIDT MARKUS
Inventor: KRAUSE RAINER KLAUS , PFEIFFER GERD , MUEHGE THORSTEN , EICKELMANN HANS-JUERGEN , HAAG MICHAEL , SCHMIDT MARKUS
IPC: H01L31/0224 , H01L27/142 , H01L31/068 , H01L31/18
CPC classification number: H01L31/022441 , H01L31/02008 , H01L31/022425 , H01L31/0504 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of backside contacting of thin layer photovoltaic cells consisting of Si elements as well as thin film cells, like CIGS, is provided, consisting of the following steps: providing a p-n-junction consisting of a thin n-doped Si layer and a thin p-doped Si layer bonded on top of said n-doped Si layer; bonding said p-n-junction to a glass substrate; preparing contact points on said structured thin p-doped Si layer and said thin n-doped Si layer; and creating contact pins on said structured thin p-doped Si layer and said thin n-doped Si layer.
Abstract translation: 提供了由Si元素组成的薄层光伏电池以及诸如CIGS的薄膜电池的背面接触的方法,包括以下步骤:提供由n掺杂的薄Si层和薄的Si层组成的pn结 p掺杂Si层结合在所述n掺杂Si层的顶部; 将所述p-n结键合到玻璃基板上; 在所述结构化的薄p掺杂Si层和所述薄n掺杂Si层上制备接触点; 以及在所述结构化的薄p掺杂Si层和所述薄n掺杂Si层上产生接触引脚。
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公开(公告)号:WO2009098105A1
公开(公告)日:2009-08-13
申请号:PCT/EP2009/050298
申请日:2009-01-13
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , KRAUSE, Rainer Klaus , PFEIFFER, Gerd , EICKELMANN, Hans-Juergen , MUEHGE, Thorsten
Inventor: KRAUSE, Rainer Klaus , PFEIFFER, Gerd , EICKELMANN, Hans-Juergen , MUEHGE, Thorsten
CPC classification number: H01L31/022433 , H01L31/0475 , H01L31/0508 , Y02E10/50
Abstract: The invention relates to a method of manufacturing a silicon solar cell, the method comprising: -providing a carrier plate (100), -applying a first contact pattern to the carrier plate (100), the first contact pattern comprising a set of first laminar contacts (104), -applying a multitude of silicon slices (108) to the first contact pattern, wherein each first laminar contact of the set of first laminar contacts (104) is in spatial laminar contact with maximally two silicon slices (108), -applying a second contact pattern to the multitude of silicon slices (108), wherein the second contact pattern comprises a set of second laminar contacts (200), wherein each second laminar contact of the set of second laminar contacts (200) is in spatial laminar contact with maximally two silicon slices (108).
Abstract translation: 本发明涉及一种制造硅太阳能电池的方法,所述方法包括:提供承载板(100),将第一接触图案应用于承载板(100),所述第一接触图案包括一组第一层板 触点(104),将大量硅片(108)应用于第一接触图案,其中该组第一层状接触件(104)中的每个第一层状接触与最大两个硅片(108)空间层流接触, 将第二接触图案应用于多个硅片(108),其中所述第二接触图案包括一组第二层状接触(200),其中所述一组第二层状接触(200)的每个第二层状接触处于空间 与最多两个硅片层叠接触(108)。
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公开(公告)号:WO2009098109A1
公开(公告)日:2009-08-13
申请号:PCT/EP2009/050338
申请日:2009-01-14
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , KRAUSE, Rainer, Klaus , PFEIFFER, Gerd , SHAO, Xiaoyan
Inventor: KRAUSE, Rainer, Klaus , PFEIFFER, Gerd , SHAO, Xiaoyan
IPC: H01L31/18
CPC classification number: H01L31/1804 , H01L21/78 , Y02E10/547 , Y02P70/521
Abstract: The invention relates to a method of manufacturing a thin silicon slice (114), the method comprising: - providing a silicon block (100), - applying a protection pattern (102) to a surface of the silicon block (100), the protection pattern (102) defining the lateral slice boundaries, - applying an etchant to the surface comprising the protection pattern (102), the etchant being adapted to induce silicon trenches (104) in the silicon block (100), the silicon trenches (104) resulting from a - removing of the silicon located below the protection pattern (102), the removing of the silicon resulting in said thin silicon slices (114).
Abstract translation: 本发明涉及一种制造薄硅片(114)的方法,所述方法包括: - 提供硅块(100), - 将保护图案(102)施加到所述硅块(100)的表面,所述保护 定义横向切片边界的图案(102), - 向包括保护图案(102)的表面施加蚀刻剂,蚀刻剂适于在硅块(100)中诱导硅沟槽(104),硅沟槽(104) 通过去除位于保护图案(102)下方的硅来除去导致所述薄硅片(114)的硅。
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公开(公告)号:WO2008141863A2
公开(公告)日:2008-11-27
申请号:PCT/EP2008/054205
申请日:2008-04-08
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , KRAUSE, Rainer Klaus , PFEIFFER, Gerd , MUEHGE, Thorsten , EICKELMANN, Hans-Juergen , HAAG, Michael , SCHMIDT, Markus
Inventor: KRAUSE, Rainer Klaus , PFEIFFER, Gerd , MUEHGE, Thorsten , EICKELMANN, Hans-Juergen , HAAG, Michael , SCHMIDT, Markus
IPC: H01L31/0224 , H01L31/068 , H01L31/18 , H01L27/142
CPC classification number: H01L31/022441 , H01L31/02008 , H01L31/022425 , H01L31/0504 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of backside contacting of thin layer photovoltaic cells consisting of Si elements as well as thin film cells, like CIGS, is provided, consisting of the following steps: providing a p-n-junction consisting of a thin n-doped Si layer and a thin p-doped Si layer bonded on top of said n-doped Si layer; bonding said p-n-junction to a glass substrate; preparing contact points on said structured thin p-doped Si layer and said thin n-doped Si layer; and creating contact pins on said structured thin p-doped Si layer and said thin n-doped Si layer.
Abstract translation: 提供了由Si元素组成的薄层光伏电池以及诸如CIGS的薄膜电池的背面接触的方法,包括以下步骤:提供由n掺杂的薄Si层和薄的Si层组成的pn结 p掺杂Si层结合在所述n掺杂Si层的顶部; 将所述p-n结键合到玻璃基板上; 在所述结构化的薄p掺杂Si层和所述薄n掺杂Si层上制备接触点; 以及在所述结构化的薄p掺杂Si层和所述薄n掺杂Si层上产生接触引脚。
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公开(公告)号:CA1193120A
公开(公告)日:1985-09-10
申请号:CA407950
申请日:1982-07-23
Applicant: PFEIFFER GERD , STINNERTZ HORST , ZEUNERT FRITZ
Inventor: PFEIFFER GERD , STINNERTZ HORST , ZEUNERT FRITZ
Abstract: The present invention relates to a cold pilger rolling mill and a method and means for manufacturing tubes with externally and/or internally thickened portions by reducing the tubes over a mandrel by means of grooved rolls which are mounted in a reciprocating roll stand. The invention provides several varying diameter grooves on the rolls, which grooves can be brought into play one after the other by rotation of the rolls through an adjustment of the toothed racks on which the rolls are mounted. Consequently, at least one groove is provided for the rolling out of the required cross-section of most of the tube and a second groove is provided for the rolling of a thickened portion of the tube. It is essential that a smoothing zone is associated with each groove, and a zone for rotating and advancing the tube is associated with at least one of the grooves.
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