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    APPARATUS FOR REPRODUCING A DIGITAL INFORMATION SIGNAL
    1.
    发明申请
    APPARATUS FOR REPRODUCING A DIGITAL INFORMATION SIGNAL 审中-公开
    用于复制数字信息信号的装置

    公开(公告)号：WO2002103696A2

    公开(公告)日：2002-12-27

    申请号：PCT/IB2002/002326

    申请日：2002-06-18

    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  POZIDIS, Charalampos ,  COENE, Willem, M., J., M. ,  BERGMANS, Johannes, W., M.

    Inventor： POZIDIS, Charalampos ,  COENE, Willem, M., J., M. ,  BERGMANS, Johannes, W., M.

    IPC: G11B20/10

    CPC classification number: G11B20/10333 ,  G11B20/10009

    Abstract: Domain bloom, also known as asymmetry, is a systematic imperfection caused by the writing process in optical discs. During disc read-out it causes signal transitions to shift with respect to their nominal positions. State-of-the-art equalization and detection methods suffer significant performance losses if directly applied to replay signals with asymmetry. A non-linear model for replay signals with asymmetry is used for new equalization and detection techniques that are applicable to signals in the presence of asymmetry. Modifications are described of the threshold bit-detector, the run-length pushback bit-detector, and the PRML sequence detector, which have significant performance benefits. These benefits come at almost no additional cost with respect to existing detectors.

    Abstract translation: 域名绽放也被称为不对称，是由光盘写入过程引起的系统缺陷。 在光盘读出期间，它使信号转换相对于它们的标称位置移动。 最先进的均衡和检测方法如果直接应用于具有不对称性的重放信号，则会遭受显着的性能损失。 用于具有不对称性的重放信号的非线性模型被用于适用于存在不对称性的信号的新的均衡和检测技术。 描述了具有显着性能优点的阈值位检测器，游程长度推回位检测器和PRML序列检测器的修改。 对于现有的检测器来说，这些优点几乎不会增加成本。

    METHOD FOR MANUFACTORING A CARBON-BASED MEMORY ELEMENT AND MEMORY ELEMENT
    8.
    发明申请
    METHOD FOR MANUFACTORING A CARBON-BASED MEMORY ELEMENT AND MEMORY ELEMENT 审中-公开
    用于制造基于碳的存储元件和存储元件的方法

    公开(公告)号：WO2012001599A2

    公开(公告)日：2012-01-05

    申请号：PCT/IB2011052790

    申请日：2011-06-24

    Applicant: IBM ,  CAIMI DANIELE ,  ELEFTHERIOU EVANGELOS S ,  POZIDIS CHARALAMPOS ,  ROSSEL CHRISTOPHE P ,  SEBASTIAN ABU

    Inventor： CAIMI DANIELE ,  ELEFTHERIOU EVANGELOS S ,  POZIDIS CHARALAMPOS ,  ROSSEL CHRISTOPHE P ,  SEBASTIAN ABU

    IPC: H01L45/00

    CPC classification number: H01L45/16 ,  G11C13/0002 ,  G11C2213/15 ,  G11C2213/35 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/149

    Abstract: A method for manufacturing a resistive memory element (1) comprises: providing a storage layer (2) comprising a resistance changeable material; said resistance changeable material comprising carbon; providing contact layers (3, 4) for contacting the storage layer (2), wherein the storage layer (2) is disposed between a bottom contact layer (3) and a top contact layer (4); and doping the resistance changeable material with a dopant material. A resistive memory element (1) includes a bottom contact layer (3), a top contact layer (4) and a storage layer (2) disposed between the bottom contact layer (3) and the top contact layer (4), wherein the storage layer (2) comprises a resistance changeable material that is doped with a dopant material.

    Abstract translation: 一种用于制造电阻式存储元件（1）的方法，包括：提供包括电阻可变材料的存储层（2）; 所述电阻变化材料包含碳; 提供用于接触所述存储层（2）的接触层（3,4），其中所述存储层（2）设置在底部接触层（3）和顶部接触层（4）之间; 并用掺杂剂材料掺杂电阻可变材料。 电阻式存储器元件（1）包括底部接触层（3），顶部接触层（4）和设置在底部接触层（3）和顶部接触层（4）之间的存储层（2），其中 存储层（2）包括掺杂有掺杂剂材料的电阻可变材料。

    READ-DETECTION IN SOLID-STATE STORAGE DEVICES
    10.
    发明申请
    READ-DETECTION IN SOLID-STATE STORAGE DEVICES 审中-公开
    固态存储器件中的读取检测

    公开(公告)号：WO2013046066A1

    公开(公告)日：2013-04-04

    申请号：PCT/IB2012/053237

    申请日：2012-06-27

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  MITTELHOLZER, Thomas ,  PAPANDREOU, Nikolaos ,  POZIDIS, Charalampos

    Inventor： MITTELHOLZER, Thomas ,  PAPANDREOU, Nikolaos ,  POZIDIS, Charalampos

    IPC: G11C11/56

    CPC classification number: G11C11/5678 ,  G11C2211/563 ,  G11C2211/5634

    Abstract: Methods and apparatus are provided for detecting N-symbol codewords stored in multilevel-cell solid-state memory. Each codeword is a permutation of an N-symbol vector of a predefined set of N-symbol vectors. The symbols of each codeword, each of which has one of q symbol values, are stored in respective q-level cells of solid state memory (2), where N≥q>2. The memory cells storing a group of codewords are read to obtain respective read signals each comprising N signal components corresponding to respective symbols of a codeword. The components of each read signal are ordered according to signal level to produce an ordered read signal. Corresponding components of the ordered read signals are averaged to produce an average read signal. A reference signal level corresponding to each of the q levels of the memory cells is determined in dependence on the average read signal and predefined probabilities of occurrence of each symbol value at each symbol position in a said codeword whose symbols are ordered according to symbol value. The codeword corresponding to each read signal is then detected in dependence on the reference signal levels.

    Abstract translation: 提供了用于检测存储在多电平单元固态存储器中的N个符号码字的方法和装置。 每个码字是N个符号向量的预定义集合的N个符号向量的置换。 每个码字的符号，每个码字具有q个符号值之一，被存储在固态存储器（2）的相应的q级单元中，其中N> = q> 2。 读取存储一组码字的存储单元以获得每个包括与码字的各个符号对应的N个信号分量的各个读信号。 每个读取信号的分量根据信号电平排序以产生有序的读取信号。 将有序读取信号的相应组件平均以产生平均读取信号。 根据平均读取信号和符号根据符号值排序的所述码字中的每个符号位置处的每个符号位置的每个符号值的出现的预定概率来确定对应于存储器单元的每个q电平的参考信号电平。 然后根据参考信号电平检测对应于每个读取信号的码字。

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