Abstract:
Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer.
Abstract:
Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer.
Abstract:
Heterojunction devices and associated methods of making and using are provided. In one aspect, for example, a heterojunction photovoltaic device can include a crystalline semiconductor layer, a first doped semiconductor layer coupled to the crystalline semiconductor layer, and a second doped semiconductor layer coupled to the crystalline semiconductor layer opposite the first doped semiconductor layer. The first and second doped semiconductor layers form junctions with the semiconductor layer. The device can further include a laser processed semiconductor region coupled to the crystalline semiconductor layer.
Abstract:
Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation- absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C to about 1100° C, wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment.
Abstract:
Systems, devices, and methods for identifying an individual are provided. In one aspect, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from 700 nm to 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can include an image processing module functionally coupled to the imager device to processes the electronic representation into an individual representation having at least one substantially unique identification trait. The imager device can include a device layer having a thickness of less than about 10 microns, two doped regions forming a junction, and a textured region positioned to interact with the electromagnetic radiation, and can have an EQE of at least 33% for at least one wavelength of greater than 800 nm.
Abstract:
Systems, devices, and methods for identifying an individual are provided. In one aspect, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from 700 nm to 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can include an image processing module functionally coupled to the imager device to processes the electronic representation into an individual representation having at least one substantially unique identification trait. The imager device can include a device layer having a thickness of less than about 10 microns, two doped regions forming a junction, and a textured region positioned to interact with the electromagnetic radiation, and can have an EQE of at least 33% for at least one wavelength of greater than 800 nm.
Abstract:
Heterojunction devices and associated methods of making and using are provided. In one aspect, for example, a heterojunction photovoltaic device can include a crystalline semiconductor layer, a first doped semiconductor layer coupled to the crystalline semiconductor layer, and a second doped semiconductor layer coupled to the crystalline semiconductor layer opposite the first doped semiconductor layer. The first and second doped semiconductor layers form junctions with the semiconductor layer. The device can further include a laser processed semiconductor region coupled to the crystalline semiconductor layer.
Abstract:
Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation- absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C to about 1100° C, wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment.
Abstract:
An infrared emitter, which utilizes a photonic bandgap (PBG) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of holes are defined in the device in a periodic manner, wherein each hole extends at least partially through the metallic material layer. The three material layers are adapted to transfer energy from the semiconductor material layer to the outer side of the metallic material layer and emit electromagnetic energy in a narrow band of wavelengths from the outer side of the metallic material layer.
Abstract:
An absorption spectroscopy apparatus including an elliptical mirror centered on the midpoint between a source/detector and a mirror. The cavity between the elliptical mirror and the source/bolometer and mirror defines an interior volume of a sample cell. Electromagnetic radiation from the source/detector travels along a multi-segment path starting from the source/bolometer toward the elliptical mirror, reflecting off of the elliptical mirror and traveling toward the mirror, reflecting off of the mirror and traveling back toward the elliptical mirror and finally reflecting off the elliptical mirror for a second time and returning toward the source/bolometer. The multiple reflections combined with the focusing effects of the elliptical mirrored surface result in an efficient sampling device. Among other aspects and advantages, the apparatus of the present disclosure is able to use incoherent, non-collimated light sources while maintaining high optical throughput efficiencies.