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公开(公告)号：WO1994015353A1
公开(公告)日：1994-07-07
申请号：PCT/RU1993000318
申请日：1993-12-27
Applicant: NAUCHNO-PROIZVODSTVENNOE PREDPRIYATIE "e;PRINCIPIA OPTICS"e; , PRINCIPIA OPTICS INC. , KOZLOVSKY, Vladimir Ivanovich , LAVRUSHIN, Boris Mikhailovich
IPC: H01J31/08
CPC classification number: H01S3/0959 , H01S5/04
Abstract: A laser electron-beam tube comprises an electron-beam source housed in a vacuum chamber and a laser target. The laser target consists of partially transparent reflecting layers and highly reflecting layers, all accommodated on a substratum; interspersed with these are at least two layers of an active semiconductor material and layers of a passive semiconductor material alternating therewith, with corresponding narrower or wider exclusion zones. The semiconductor materials are crystals whose lattice periods differ in the free state by more than 0.1%. The layers are under elastic tension and have a thickness below the critical thickness.
Abstract translation: 激光电子束管包括容纳在真空室中的电子束源和激光靶。 激光靶由部分透明的反射层和高反射层组成，全部容纳在基底上; 散布有它们的是至少两层有源半导体材料和与其交替的无源半导体材料的层，具有相应的较窄或更宽的排除区。 半导体材料是晶格周期在自由状态下不同于0.1％以上的晶体。 这些层处于弹性张力下并具有低于临界厚度的厚度。
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2.发明申请PROCESS FOR GROWING A MONOCRYSTAL FROM A MULTIPLE-CONSTITUENT SOLID SOLUTION AND A DEVICE FOR CARRYING OUT THE SAME 审中-公开用于从多元固体溶液中生长单晶的方法和用于实施其的装置
公开(公告)号：WO1994012698A1
公开(公告)日：1994-06-09
申请号：PCT/RU1993000288
申请日：1993-11-30
Applicant: NAUCHNO-PROIZVODSTVENNOE PREDPRIYATIE "e;PRINCIPIA ... , PRINCIPIA OPTICS INC. , KOROSTELIN, Jury Vladimirovich , KOZLOVSKY, Vladimir Ivanovich , NASIBOV, Alexandr Sergeevich , SHAPKIN, Petr Vasilievich
IPC: C30B23/00
CPC classification number: C30B23/00 , C30B23/002
Abstract: In a process for growing a monocrystal from a multi-constituent solid solution, said monocrystal is grown from at least two parent substances which are accommodated separately. These substances are heated to a temperature above the growth temperature of the monocrystal. The respective vapours produced by the heating are fed in separate streams to the growth region of the monocrystal. The partial pressure of at least one of the vapours is altered in inverse proportion to the concentration of that particular substance in the growing monocrystal. A suitable device comprises a chamber (1) divided into compartments for the raw materials (16, 17). At least one of these compartments is provided with a system (15, 18, 19) for regulating the partial pressure of the raw material vapour.
Abstract translation: 在从多组分固溶体生长单晶的方法中，所述单晶从分开容纳的至少两种母体物质生长。 将这些物质加热到高于单晶生长温度的温度。 通过加热产生的相应蒸气以单独的流进料到单晶的生长区。 至少一种蒸气的分压与生长中的单晶中特定物质的浓度成反比改变。 合适的装置包括分成用于原料（16,17）的隔间的室（1）。 这些隔室中的至少一个设置有用于调节原料蒸气的分压的系统（15,18,19）。
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3.发明申请
公开(公告)号：WO1994012697A1
公开(公告)日：1994-06-09
申请号：PCT/RU1993000287
申请日：1993-11-30
Applicant: NAUCHNO-PROIZVODSTVENNOE PREDPRIYATIE "e;PRINCIPIA ... , PRINCIPIA OPTICS INC. , KOROSTELIN, Jury Vladimirovich
IPC: C30B23/00
CPC classification number: C30B23/00
Abstract: A process for growing a monocrystal involves heating the parent semiconductor substance to a temperature higher than the growth temperature. A temperature field with a particular configuration of isothermal surfaces is created around the seed crystal (7). One of these surfaces is at the growth temperature of the monocrystal and extends along the boundary between the vapour and solid phases. The profile of the monocrystal surface as it is formed depends on the configuration of the isothermal surfaces of the temperature field. The process of growing the monocrystal involves displacing the seed crystal (7) and growing monocrystal in the direction opposite to the direction of growth of the monocrystal. A device for carrying out this process comprises a body (1) made of a refractory material and mounted within the heating unit (2). The said body accommodates a chamber (4) for the raw semiconductor material and the seed crystal (7) holder (8), a device (10) for creating a temperature field above the seed crystal (7) being arranged between the two.
Abstract translation: 用于生长单晶的方法包括将母体半导体物质加热到高于生长温度的温度。 在晶种（7）周围产生具有等温表面特定构型的温度场。 这些表面中的一个处于单晶的生长温度并沿着蒸汽和固相之间的边界延伸。 单晶表面形成的轮廓取决于温度场的等温表面的构型。 生长单晶的过程涉及使晶种（7）移动并沿与单晶生长方向相反的方向生长单晶。 用于执行该方法的装置包括由耐火材料制成并安装在加热单元（2）内的主体（1）。 所述主体容纳用于原料半导体材料和晶种（7）保持器（8）的室（4），用于在晶种（7）之间形成温度场的装置（10）布置在两者之间。
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公开(公告)号：DE69326783D1
公开(公告)日：1999-11-18
申请号：DE69326783
申请日：1993-12-27
Applicant: N PROIZV PREDPR PRINCIPIA OPTI , PRINCIPIA OPTICS INC
Abstract: A laser electron-beam tube comprises an electron-beam source housed in a vacuum chamber and a laser target. The laser target consists of partially transparent reflecting layers and highly reflecting layers, all accommodated on a substratum; interspersed with these are at least two layers of an active semiconductor material and layers of a passive semiconductor material alternating therewith, with corresponding narrower or wider exclusion zones. The semiconductor materials are crystals whose lattice periods differ in the free state by more than 0.1 %. The layers are under elastic tension and have a thickness bellow the critical thickness.
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公开(公告)号：DE69326783T2
公开(公告)日：2000-11-16
申请号：DE69326783
申请日：1993-12-27
Applicant: N PROIZV PREDPR PRINCIPIA OPTI , PRINCIPIA OPTICS INC
Abstract: A laser electron-beam tube comprises an electron-beam source housed in a vacuum chamber and a laser target. The laser target consists of partially transparent reflecting layers and highly reflecting layers, all accommodated on a substratum; interspersed with these are at least two layers of an active semiconductor material and layers of a passive semiconductor material alternating therewith, with corresponding narrower or wider exclusion zones. The semiconductor materials are crystals whose lattice periods differ in the free state by more than 0.1 %. The layers are under elastic tension and have a thickness bellow the critical thickness.
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Patent Agency Ranking
公开(公告)号：AT185655T
公开(公告)日：1999-10-15
申请号：AT94904793
申请日：1993-12-27
Applicant: N PROIZV PREDPR PRINCIPIA OPTI , PRINCIPIA OPTICS INC
Abstract: A laser electron-beam tube comprises an electron-beam source housed in a vacuum chamber and a laser target. The laser target consists of partially transparent reflecting layers and highly reflecting layers, all accommodated on a substratum; interspersed with these are at least two layers of an active semiconductor material and layers of a passive semiconductor material alternating therewith, with corresponding narrower or wider exclusion zones. The semiconductor materials are crystals whose lattice periods differ in the free state by more than 0.1 %. The layers are under elastic tension and have a thickness bellow the critical thickness.
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公开(公告)号：EP0696094B1
公开(公告)日：1999-10-13
申请号：EP94904793.0
申请日：1993-12-27
IPC: H01S3/0959 , H01S3/18 , H01J29/10
CPC classification number: H01S3/0959 , H01S5/04
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8.发明公开A semiconductor laser screen of a cathode-ray tube 失效Kathodenstrahlrohr-Schirm von Halbleiterlasern。
公开(公告)号：EP0549363A1
公开(公告)日：1993-06-30
申请号：EP92311808.7
申请日：1992-12-24
Applicant: PRINCIPIA OPTICS INC. , P.N. LEBEDEV INSTITUTE OF PHYSICS
Inventor： Nasibov, Alexander S. , Reznikov, Pavel V.
IPC: H01S3/0959 , H01S3/18 , H01J29/10
CPC classification number: H01S5/305 , H01S5/04 , H01S5/041 , H01S5/30 , H01S5/3059 , H01S5/3086
Abstract: A laser screen of a cathode-ray tube has a semiconductor member (2) made of a semiconductor material selected from the group consisting of an A II B VI compound or a solid solution of an A II B VI compound and a pair of mirror layers (1,3) formed on the opposite sides of said semiconductor member. The material of the semiconductor member is doped with a donor impurity in the form of an element of the VII Group of the Periodic Table. A content of the donor impurity ranges from 3·10¹⁷ to 5·10¹⁸ cm⁻³, and the resistivity of the semiconductor member is maximum 10⁻¹Ω/cm.
Abstract translation: 阴极射线管的激光屏具有由选自由AIIBVI化合物或AIIBVI化合物的固溶体和形成的一对镜层（1,3）组成的组的半导体材料制成的半导体部件（2） 在所述半导体部件的相对侧。 半导体元件的材料掺杂有元素周期表VII族元素形式的施主杂质。 施主杂质的含量范围为3.10 1 -7℃至5.10 8 cm -3，半导体元件的电阻率最大为10欧姆欧姆/厘米3 。
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公开(公告)号：EP0696094A4
公开(公告)日：1995-11-28
申请号：EP94904793
申请日：1993-12-27
Applicant: NP PREDPR PRINCIPIA OPTICS , PRINCIPIA OPTICS INC
CPC classification number: H01S3/0959 , H01S5/04
Abstract: A laser electron-beam tube comprises an electron-beam source housed in a vacuum chamber and a laser target. The laser target consists of partially transparent reflecting layers and highly reflecting layers, all accommodated on a substratum; interspersed with these are at least two layers of an active semiconductor material and layers of a passive semiconductor material alternating therewith, with corresponding narrower or wider exclusion zones. The semiconductor materials are crystals whose lattice periods differ in the free state by more than 0.1%. The layers are under elastic tension and have a thickness below the critical thickness.
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公开(公告)号：EP0696094A1
公开(公告)日：1996-02-07
申请号：EP94904793.0
申请日：1993-12-27
IPC: H01S3/0959 , H01S3/18 , H01J29/10
CPC classification number: H01S3/0959 , H01S5/04
Abstract: A laser electron-beam tube comprises an electron-beam source housed in a vacuum chamber and a laser target. The laser target consists of partially transparent reflecting layers and highly reflecting layers, all accommodated on a substratum; interspersed with these are at least two layers of an active semiconductor material and layers of a passive semiconductor material alternating therewith, with corresponding narrower or wider exclusion zones. The semiconductor materials are crystals whose lattice periods differ in the free state by more than 0.1 %. The layers are under elastic tension and have a thickness bellow the critical thickness.
Abstract translation: 激光电子束管包括容纳在真空室和激光靶中的电子束源。 激光靶由部分透明的反射层和高反射层组成，全部容纳在基底上; 与之交替的是至少两层有源半导体材料和与其交替的无源半导体材料的层，具有相应较窄或更宽的排除区。 半导体材料是其晶格周期在自由状态下不同于0.1％以上的晶体。 这些层处于弹性张力下，并且具有低于临界厚度的厚度。
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