Abstract:
PROBLEM TO BE SOLVED: To provide a method for extracting oil-and-fat of woven fabric by a supercritical fluid. SOLUTION: The method for extracting oil-and-fat of woven fabric by a supercritical fluid comprises a step of placing a woven fabric in an extraction tank 10 having a central pillar body in which an opening 11 for pouring a supercritical fluid is provided, a step of pouring a gas into a storage tank 20, a step of cooling the gas by a cooling apparatus 30, a step of pressing the gas by a pump 40, a step of heating the gas by a heating apparatus 50 to form a supercritical fluid and a step of carrying out oil-and-fat extraction by pouring the supercritical fluid into an extraction tank 10. The method efficiently washes woven fabric, etc., to which oil-and-fat are attached without requiring a detergent or a washing water. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
An electrical or electrochemical cell, including a cathode layer, an electrolyte layer, and an anode layer is disclosed. The cathode layer includes a first material providing a cathodic electric transport, charge storage or redox function. The electrolyte layer includes a polymer, a first electrolyte salt, and/or an ionic liquid. The anode layer includes a second material providing an anodic electric transport, charge storage or redox function. At least one of the cathode and anode layers includes the ionic liquid, a second electrolyte salt, and/or a transport-enhancing additive.
Abstract:
An electrical or electrochemical cell, including a cathode layer, an electrolyte layer, and an anode layer is disclosed. The cathode layer includes a first material providing a cathodic electric transport, charge storage or redox function. The electrolyte layer includes a polymer, a first electrolyte salt, and/or an ionic liquid, The anode layer includes a second material providing an anodic electric transport, charge storage or redox function. At least one of the cathode and anode layers includes the ionic liquid, a second electrolyte salt, and/or a transport-enhancing additive.
Abstract:
A package comprises a first unit including a semiconductor body, a hole, an isolation layer, a conductive layer and a solder. The semiconductor body has a first surface having a pad and a protection layer exposing the pad. The hole penetrates the semiconductor body. The isolation layer is disposed on the side wall of the hole. The conductive layer covers the pad, a part of the protection layer, and the isolation layer. The lower end of the conductive layer extends to below a second surface of the semiconductor body. The solder is disposed in the hole, and is electrically connected to the pad via the conductive layer. A second unit similar to the first unit and stacked thereon includes a lower end of a second conductive layer that extends to below a second surface of a second semiconductor body and contacts the upper end of the first solder.
Abstract:
Method for manufacturing a device having a conductive via includes the following steps. A dielectric material layer including a through hole is formed on a substrate. A seed metallic layer is formed on the dielectric material layer and in the through hole. A metallic layer is formed on the seed metallic layer, and is filled in the through hole. The metallic layer located over the seed metallic layer and outside the through hole is etched by a spin etching process, whereby the metallic layer located in the through hole is formed to a lower portion. An upper portion is formed on the lower portion, and a metallic trace is formed on the seed metallic layer, wherein the upper and lower portions is formed to a conductive via, and the conductive via and the metallic trace expose a part of the seed metallic layer. The exposed seed metallic layer is etched.
Abstract:
The present invention relates to a three-dimensional package and a method of making the same. The method comprises: (a) providing a semiconductor body; (b) forming at least one blind hole in the semiconductor body; (c) forming an isolation layer on the side wall of the blind hole; (d) forming a conductive layer on the isolation layer; (e) patterning the conductive layer; (f) removing a part of the lower surface of the semiconductor body and a part of the isolation layer, so as to expose a part of the conductive layer; (g) forming a solder on the lower end of the conductive layer; (h) stacking a plurality of the semiconductor bodies, and performing a reflow process; and (i) cutting the stacked semiconductor bodies, so as to form a plurality of three-dimensional packages. As such, the lower end of the conductive layer and the solder thereon are “inserted” into the space formed by the conductive layer of the lower semiconductor body, so as to enhance the joining between the conductive layer and the solder, and effectively reduce the overall height of the three-dimensional packages after joining.
Abstract:
The present invention relates to a method of extracting oil of cloth via supercritical fluid, comprises the steps of: a cloth to be extracted is provided in an extracting tank; a gas is filled into a storing tank; a water-cooling machine is provided and served to cool down the temperature of the gas; a pump is provided and served to compress the gas; a water-heating machine is provided and served to raise the temperature of the gas so the gas becomes a supercritical fluid; and the supercritical fluid is inserted into the extracting tank for extracting the oil. By the above mentioned method, the cleanness of the cleanroom wiping cloth can be immediately sensed and obtained, and the gas can be recycled for achieving energy-saving.
Abstract:
A three-dimensional package and a method of making the same including providing a wafer; forming at least one blind hole in the wafer; forming an isolation layer on the side wall of the blind hole; forming a conductive layer on the isolation layer; forming a dry film on the conductive layer; filling the blind hole with metal; removing the dry film, and patterning the conductive layer; removing a part of the metal in the blind hole to form a space; removing a part of the second surface of the wafer and a part of the isolation layer, to expose a part of the conductive layer; forming a solder on the lower end of the conductive layer, the melting point of the solder is lower than the metal; stacking a plurality of the wafers, and performing a reflow process; and cutting the stacked wafers, to form three-dimensional packages.
Abstract:
A method for manufacturing a device having a via structure includes the following steps. A seed metallic layer is formed on a substrate. A patterned metallic-trace layer is formed on the seed metallic layer. A positive-type photoresist layer is formed on the patterned metallic-trace layer and seed metallic layer. The photoresist layer is patterned for defining a through hole which exposes a part of the patterned metallic-trace layer, wherein the through hole has a high aspect ratio. A metallic material is electroplated in the through hole so as to form a metallic pillar. The photoresist layer is removed. A part of the seed metallic layer is etched, whereby traces of the patterned metallic-trace layer are electrically isolated from each other. A dielectric material layer is formed on the substrate for sealing the patterned metallic-trace layer and a part of the metallic pillar and exposing a top surface of the metallic pillar.
Abstract:
A game racquet includes head portion and a handle portion. The head and handle portions include one or both of a fiber-reinforced thermoset material and a fiber-reinforced thermoplastic material. The handle portion is coupled to the head portion by shock and/or vibration absorbing material.