公开(公告)号：WO2005071722A1

公开(公告)日：2005-08-04

申请号：PCT/US2005/001073

申请日：2005-01-12

Applicant: LAM RESEARCH CORPORATION ,  RAMALINGAM, Shyam ,  KOTA, Gowri ,  LEE, Chris

Inventor： RAMALINGAM, Shyam ,  KOTA, Gowri ,  LEE, Chris

IPC: H01L21/311

CPC classification number: H01L29/517 ,  H01L21/28194 ,  H01L21/31116 ,  H01L21/31122

Abstract: A method for selectively etching a high dielectric constant layer over a silicon substrate is provided. The silicon substrate is placed into an etch chamber. An etchant gas is provided into the etch chamber, where the etchant gas comprises BCl 3 , an inert diluent, and Cl 2 , where the flow ratio of the inert diluent to BCl 3 is between 2:1 and 1:2, and where the flow ratio of BCl 3 to Cl 2 is between 2:1 and 20:1. A plasma is generated from the etchant gas to selectively etch the high dielectric constant layer.

Abstract translation: 提供了一种用于选择性地蚀刻硅衬底上的高介电常数层的方法。 将硅衬底放入蚀刻室中。 将蚀刻剂气体提供到蚀刻室中，其中蚀刻剂气体包含BCl 3，惰性稀释剂和Cl 2，其中惰性稀释剂与BCl 3：在2：1和1：2之间，并且其中BCl 3：与Cl 2的流动比在2：1和20之间 ：1。 从蚀刻剂气体产生等离子体以选择性地蚀刻高介电常数层。

公开(公告)号：WO2005071722B1

公开(公告)日：2005-11-17

申请号：PCT/US2005001073

申请日：2005-01-12

Applicant: LAM RES CORP ,  RAMALINGAM SHYAM ,  KOTA GOWRI ,  LEE CHRIS

Inventor： RAMALINGAM SHYAM ,  KOTA GOWRI ,  LEE CHRIS

IPC: H01L21/28 ,  H01L21/311 ,  H01L29/51

CPC classification number: H01L29/517 ,  H01L21/28194 ,  H01L21/31116 ,  H01L21/31122

Abstract: A method for selectively etching a high dielectric constant layer over a silicon substrate is provided. The silicon substrate is placed into an etch chamber. An etchant gas is provided into the etch chamber, where the etchant gas comprises BCl3, an inert diluent, and Cl2, where the flow ratio of the inert diluent to BCl3 is between 2:1 and 1:2, and where the flow ratio of BCl3 to Cl2 is between 2:1 and 20:1. A plasma is generated from the etchant gas to selectively etch the high dielectric constant layer.

Abstract translation: 提供了一种用于在硅衬底上选择性蚀刻高介电常数层的方法。 将硅衬底放置在蚀刻室中。 蚀刻气体被提供到蚀刻室中，其中蚀刻剂气体包括BCl 3，惰性稀释剂和Cl2，其中惰性稀释剂与BCl 3的流动比在2:1和1:2之间，其中流动比 BCl3至Cl2的含量为2：1至20：1。 从蚀刻剂气体产生等离子体以选择性地蚀刻高介电常数层。