公开(公告)号：IL251786D0

公开(公告)日：2017-06-29

申请号：IL25178617

申请日：2017-04-19

Applicant: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ROTHMAN JOHAN

Inventor： ROTHMAN JOHAN

IPC: G01J20060101

Abstract: The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer and each diode comprising a collection region with a first type of doping in the absorption layer. The device comprises a conduction mesh under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions of two adjacent diodes, the at least one conduction channel having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.

公开(公告)号：IL259526A

公开(公告)日：2021-12-01

申请号：IL25952618

申请日：2018-05-22

Applicant: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ROTHMAN JOHAN

Inventor： ROTHMAN JOHAN

IPC: H01L31/02 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/18

Abstract: A photodetection device and a method for manufacturing the device, the device including a substrate and an array of diodes, the substrate including an absorption layer including a first type of doping, and each diode including, in the absorption layer, a collection region including a second type of doping opposite to the first type. The device further includes, under the surface of the substrate, a conductive mesh including at least one conductive channel inserted between the collection regions of two adjacent diodes, the at least one conductive channel including the first type of doping and a higher doping density than the absorption layer. The doping density of the at least one conductive channel is the result of a diffusion of metal in the absorption layer from a metal mesh provided on the surface of the substrate.

公开(公告)号：IL267741D0

公开(公告)日：2019-08-29

申请号：IL26774119

申请日：2019-06-30

Applicant: BADANO GIACOMO ,  ROTHMAN JOHAN ,  COMMISSARIAT ENERGIE ATOMIQUE

Inventor： BADANO GIACOMO ,  ROTHMAN JOHAN

IPC: G02B20060101

Abstract: The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.

公开(公告)号：IL259526D0

公开(公告)日：2018-07-31

申请号：IL25952618

申请日：2018-05-22

Applicant: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ROTHMAN JOHAN

Inventor： ROTHMAN JOHAN

IPC: H01L20060101

Abstract: A photodetection device and a method for manufacturing the device, the device including a substrate and an array of diodes, the substrate including an absorption layer including a first type of doping, and each diode including, in the absorption layer, a collection region including a second type of doping opposite to the first type. The device further includes, under the surface of the substrate, a conductive mesh including at least one conductive channel inserted between the collection regions of two adjacent diodes, the at least one conductive channel including the first type of doping and a higher doping density than the absorption layer. The doping density of the at least one conductive channel is the result of a diffusion of metal in the absorption layer from a metal mesh provided on the surface of the substrate.

公开(公告)号：IL259543A

公开(公告)日：2021-07-29

申请号：IL25954318

申请日：2018-05-23

Applicant: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ROTHMAN JOHAN ,  ROCHETTE FLORENT

Inventor： ROTHMAN JOHAN ,  ROCHETTE FLORENT

IPC: H01L27/146 ,  H01L31/103

Abstract: A photodetection device including a diode array and a method for production thereof. In the device, each diode of the array includes an absorption region having a first bandgap energy and a collection region having a first doping type, and adjacent diodes in a network are separated by a trench including sides and a bottom. The bottom and sides of the trench form a stabilization layer having a second doping type, opposite the first doping type, and a bandgap energy greater than the first bandgap energy of the absorption regions.

公开(公告)号：IL251786A

公开(公告)日：2021-07-29

申请号：IL25178617

申请日：2017-04-19

Applicant: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ROTHMAN JOHAN

Inventor： ROTHMAN JOHAN

IPC: H01L27/146 ,  H01L27/00 ,  H01L29/73

Abstract: The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer and each diode comprising a collection region with a first type of doping in the absorption layer. The device comprises a conduction mesh under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions of two adjacent diodes, the at least one conduction channel having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.

公开(公告)号：IL259543D0

公开(公告)日：2018-07-31

申请号：IL25954318

申请日：2018-05-23

Applicant: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ROTHMAN JOHAN ,  ROCHETTE FLORENT

Inventor： ROTHMAN JOHAN ,  ROCHETTE FLORENT

IPC: H01L20060101

Abstract: A photodetection device including a diode array and a method for production thereof. In the device, each diode of the array includes an absorption region having a first bandgap energy and a collection region having a first doping type, and adjacent diodes in a network are separated by a trench including sides and a bottom. The bottom and sides of the trench form a stabilization layer having a second doping type, opposite the first doping type, and a bandgap energy greater than the first bandgap energy of the absorption regions.

公开(公告)号：WO2010086543A1

公开(公告)日：2010-08-05

申请号：PCT/FR2010/050112

申请日：2010-01-26

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ROTHMAN, Johan

Inventor： ROTHMAN, Johan

IPC: H01L31/107 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0216 ,  H01L31/0232

CPC classification number: H01L31/1032 ,  B82Y20/00 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/03529 ,  H01L31/1035 ,  H01L31/105 ,  H01L31/107 ,  Y02E10/50

Abstract: La photodiode fabriquée comprend un empilement de trois couches comprenant une couche intermédiaire (2) interposée entre une première et une deuxième couches ( 1, 3) de semi-conducteurs d'un premier type de conductivité et une région (4) en contact avec au moins la couche intermédiaire (2) et la deuxième couche (3) et s'étendant transversalement par rapport aux plans des trois couches ( 1, 2, 3), ladite région (4) présentant un deuxième type de conductivité opposé au premier type de conductivité. La couche intermédiaire (2) est réalisée en un matériau semi-conducteur du deuxième type de conductivité, une inversion du type de conductivité de la couche intermédiaire (2) depuis le deuxième type de conductivité vers le premier type de conductivité étant induite par les dopants de premier type de conductivité présents dans les première et deuxième couches (1, 3) de façon à former une jonction P-N avec ladite région (4).

Abstract translation: 本发明的光电二极管包括三层的叠层，包括设置在具有第一类导电性的半导体的第一和第二层（1,3）之间的中间层（2）和与至少 中间层（2）和第二层（3），并且相对于三层（1,2,3）的平面横向延伸，所述区域（4）具有与第一类型的导电性相反的第二类型的导电性 。 中间层（2）由具有第二类导电性的半导体材料制成，中间层（2）的导电类型从第二类导电性转变为由掺杂剂诱发的第一类型的导电性 的第一和第二层（1,3）中的第一类型的导电性，以便与所述区域（4）形成PN结。

公开(公告)号：WO2005101512A2

公开(公告)日：2005-10-27

申请号：PCT/FR2005/050208

申请日：2005-04-04

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ,  ROTHMAN, Johan

Inventor： ROTHMAN, Johan

IPC: H01L27/144

CPC classification number: H01L31/03529 ,  H01L27/144 ,  H01L31/022408 ,  H01L31/101 ,  H01L31/109 ,  Y02E10/50

Abstract: L'invention concerne un dispositif de détection photonique, de type MESA, comportant au moins une première jonction, qui comporte elle - même une première couche collectrice (2), des flancs (5) formés ou gravés dans cette couche collectrice, caractérisé en ce que ces flancs comportent au moins partiellement une couche (51) de dopage opposé au dopage de la première couche collectrice.

Abstract translation: MESA型光子检测装置，其包括至少一个第一接头，该第一接头又包括第一集电器层（2）和在其中形成或蚀刻的侧面（5），其特征在于，所述侧面至少部分地包括相对的层（51） 掺杂到第一集电极层。

公开(公告)号：WO2005101512A3

公开(公告)日：2006-07-20

申请号：PCT/FR2005050208

申请日：2005-04-04

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  ROTHMAN JOHAN

Inventor： ROTHMAN JOHAN

IPC: H01L31/101 ,  H01L27/144 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/109

CPC classification number: H01L31/03529 ,  H01L27/144 ,  H01L31/022408 ,  H01L31/101 ,  H01L31/109 ,  Y02E10/50

Abstract: A MESA-type photon detection device comprising at least one first junction which in turn comprises a first collector layer (2), and flanks (5) formed or etched therein, characterised in that the flanks at least partially comprise a layer (51) oppositely doped to the first collector layer.

Abstract translation: MESA型光子检测装置，其包括至少一个第一接头，该第一接头又包括第一收集器层（2）和在其中形成或蚀刻的侧面（5），其特征在于，所述侧面至少部分地包括相对的层（51） 掺杂到第一集电极层。