公开(公告)号：WO2008010957A3

公开(公告)日：2008-01-24

申请号：PCT/US2007/015987

申请日：2007-07-13

Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  YUNFEI, Ding

Inventor： YUNFEI, Ding

IPC: G11C11/00

Abstract: A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).

公开(公告)号：WO2007137055A2

公开(公告)日：2007-11-29

申请号：PCT/US2007/069014

申请日：2007-05-16

Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  XIAO, Luo ,  WANG, Lien-chang

Inventor： XIAO, Luo ,  WANG, Lien-chang

IPC: H01L29/76 ,  H01L29/94 ,  G11C11/00 ,  G11C11/14 ,  H01L31/00

CPC classification number: H01L27/228 ,  G11C11/16 ,  H01L29/4238

Abstract: A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.

Abstract translation: 描述了一种用于提供和使用磁存储单元和磁存储器的方法和系统。 该方法和系统包括提供磁性元件并提供选择装置。 磁性元件可通过在第一方向通过磁性元件驱动的第一写入电流而被编程为第一状态，并且通过在第二方向上被驱动通过磁性元件的第二写入电流而被编程为第二状态。 选择装置与磁性元件连接。 选择装置包括其中具有孔的门。 选择装置被配置为使得第一写入电流和第二写入电流被提供给穿过该孔的磁性元件。

公开(公告)号：WO2007117392A2

公开(公告)日：2007-10-18

申请号：PCT/US2007/008203

申请日：2007-03-29

Applicant: GRANDIS INC. ,  RENESAS TECHNOLOGY CORP. ,  WANG, Lien-Chang ,  CHEN, Eugene Youjun ,  HUAI, Yiming ,  DIAO, Zhitao

Inventor： WANG, Lien-Chang ,  CHEN, Eugene Youjun ,  HUAI, Yiming ,  DIAO, Zhitao

IPC: H01L43/00

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/12

Abstract: Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.

Abstract translation: 与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。 描述了插头MTJ设计和制造技术。

公开(公告)号：WO2008118942A1

公开(公告)日：2008-10-02

申请号：PCT/US2008/058231

申请日：2008-03-26

Applicant: GRANDIS INC. ,  RENESAS TECHNOLOGY CORP.

Inventor： DIAO, Zhitao ,  WANG, Lien-Chang ,  HUAI, Yiming

IPC: G11C11/15

CPC classification number: G11C11/16 ,  Y10T29/49002

Abstract: A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.

Abstract translation: 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括在阵列，多个位线以及至少一个偏置结构中提供多个磁存储单元。 多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件，并且可由通过磁性元件驱动的至少一个写入电流来编程。 多个位线对应于多个磁存储单元。 所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。 所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。

公开(公告)号：WO2009026249A1

公开(公告)日：2009-02-26

申请号：PCT/US2008/073512

申请日：2008-08-18

Applicant: GRANDIS INC. ,  RENESAS TECHNOLOGY CORP. ,  NAGAI, Hide ,  DIAO, Zhitao ,  HUAI, Yiming

Inventor： NAGAI, Hide ,  DIAO, Zhitao ,  HUAI, Yiming

IPC: G11C11/15 ,  G11B5/127

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659

Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer includes a low saturation magnetization material.

Abstract translation: 描述包括磁性元件的磁性装置。 磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。 当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。 自由层包括低饱和磁化材料。

公开(公告)号：WO2007145381A2

公开(公告)日：2007-12-21

申请号：PCT/JP2007/062638

申请日：2007-06-18

Applicant: CASIO COMPUTER CO., LTD. ,  RENESAS TECHNOLOGY CORP. ,  MURAKI, Jun ,  KURIYAMA, Yuji ,  NAKAGOMI, Kouichi ,  MIZUNO, Kimiyasu ,  IWATA, Kenichi ,  MOCHIZUKI, Seiji ,  IMAOKA, Ren

Inventor： MURAKI, Jun ,  KURIYAMA, Yuji ,  NAKAGOMI, Kouichi ,  MIZUNO, Kimiyasu ,  IWATA, Kenichi ,  MOCHIZUKI, Seiji ,  IMAOKA, Ren

IPC: H04N7/26

CPC classification number: H04N7/50 ,  H04N19/107 ,  H04N19/132 ,  H04N19/159 ,  H04N19/172 ,  H04N19/176 ,  H04N19/31 ,  H04N19/436 ,  H04N19/44 ,  H04N19/46 ,  H04N19/587 ,  H04N19/61 ,  H04N19/70

Abstract: A CODEC 5 compresses and encodes a motion picture captured at a high speed of 240 Q)S frame rate in MPEG format. The CODEC 5 divides pictures in each frame into I pictures and the main frame P pictures (P4, P8, P 12) and the other sub frame P pictures (pi, p2, p3, ...). In encoding P pictures of the main frame, the CODEC 5 uses I pictures that are adjacent on the time axis or P pictures of other main frames as a reference picture. With a playback device, etc., of its motion picture playback performance of 60 fps, to perform an actual speed playback with the playback time being equal to the picture-capturing time, only the main frame alone is to be subjected to playback, in that case the decoding process of P pictures of the sub frames is not required.

Abstract translation: CODEC 5以MPEG格式压缩并编码以240Q的高速捕获的动态图像S帧速率。 CODEC 5将每帧中的图像分为I图像和主帧P图像（P4，P8，P12）和其他子帧P图像（pi，p2，p3，...）。 在对主帧的P图像进行编码时，CODEC 5使用在时间轴上相邻的I图像或其他主帧的P图像作为参考图像。 对于60 fps的动态影像播放性能的播放装置等，为了在播放时间等于拍摄时间的情况下进行实际的速度重放，仅仅主框架将被重放， 在这种情况下，不需要子帧的P画面的解码处理。

公开(公告)号：WO2007143393A3

公开(公告)日：2007-12-13

申请号：PCT/US2007/069558

申请日：2007-05-23

Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  LUO, Xiao ,  CHEN, Eugene, Youjun ,  WANG, Lien-Chang ,  HUAI, Yiming

Inventor： LUO, Xiao ,  CHEN, Eugene, Youjun ,  WANG, Lien-Chang ,  HUAI, Yiming

IPC: G11C11/00

Abstract: A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.

公开(公告)号：WO2006047061A3

公开(公告)日：2006-05-04

申请号：PCT/US2005/036059

申请日：2005-10-07

Applicant: SEMEQUIP INC. ,  RENESAS TECHNOLOGY CORP. ,  JACOBSON, Dale, C. ,  KAWASAKI, Yoji

Inventor： JACOBSON, Dale, C. ,  KAWASAKI, Yoji

IPC: H01L21/336 ,  H01L21/425

Abstract: A method of producing ultra shallow junctions (104) for PMOS transistors, which eliminates the need for pre-amorphization implants, is disclosed. The method utilizes octadecaborane, B 18 H 22 . In accordance with the present invention, the pre-­amorphizing step may be eliminated, greatly reducing cost per processed wafer. An appropriate process sequence has been suggested to take advantage of cluster ion implantation for PMOS manufacturing. In addition, the novel use of tilted implants for the source/drain extension and for pocket implants has been described.

公开(公告)号：WO2009021006A1

公开(公告)日：2009-02-12

申请号：PCT/US2008/072289

申请日：2008-08-06

Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  LUO, Xiao ,  YU, David, Chang-cheng

Inventor： LUO, Xiao ,  YU, David, Chang-cheng

IPC: G11C11/14

CPC classification number: G11C11/1673 ,  G11C11/1659

Abstract: A method and system for providing a magnetic memory including a plurality of magnetic storage cells, a plurality of bit lines, at least one reference line, and at least one sense amplifier. Magnetic element(s) are programmable using write current(s) driven through the magnetic element. The sense amplifier(s) are coupled with the bit lines and reference line(s), and include logic and a plurality of stages. A first stage converts at least current signal to at least one differential voltage signal. A second stage amplifies the at least one differential voltage signal. The logic selectively disables at least one of the first and second stages in the absence of a read operation and enabling the first and second stages during the read operation.

Abstract translation: 一种用于提供包括多个磁存储单元，多个位线，至少一个参考线和至少一个读出放大器的磁存储器的方法和系统。 磁性元件可以通过驱动通过磁性元件的写入电流来编程。 读出放大器与位线和参考线耦合，并且包括逻辑和多个级。 第一级至少将电流信号转换成至少一个差分电压信号。 第二级放大至少一个差分电压信号。 在没有读取操作的情况下，逻辑选择性地禁用第一和第二级中的至少一个，并且在读取操作期间启用第一级和第二级。

公开(公告)号：WO2008045684A2

公开(公告)日：2008-04-17

申请号：PCT/US2007/079584

申请日：2007-09-26

Applicant: RENESAS TECHNOLOGY CORP. ,  KUIVENHOVEN, Robert

Inventor： KUIVENHOVEN, Robert

IPC: B60R21/16

CPC classification number: B60R21/0173

Abstract: A squib driver module comprises a squib circuit for deploying a squib, e.g., in an airbag assembly, the squib circuit including a high side driver and a low side driver in combination for driving a firing signal to the squib: a circuit for activating the firing signal in response to a firing condition; squib diagnostic circuits for conducting diagnostic tests without activating the firing signal and without delivering a diagnostic signal equivalent of the firing signal to the squib, and for generating digital fault information based on the tests; registers for storing the fault information; logic for recognizing a fault condition based on the fault information; and a communication module for communicating the fault condition to a microprocessor unit. The squib diagnostic circuit may include node voltage diagnostic circuits, USD and/or LSD open/short circuits, USD and/or LSD driver fault diagnostic circuits, squib-squib short diagnostic circuits, and/or squib resistance diagnostic circuits.

Abstract translation: 爆管驱动器模块包括用于展开爆管（例如在气囊组件中）的爆管电路，爆管电路包括组合的高侧驱动器和低侧驱动器，用于驱动发射信号到 爆管：响应于点火条件而激活点火信号的电路; 用于在不激活点火信号的情况下进行诊断测试并且没有向点火器发送等同于点火信号的诊断信号并且用于基于测试产生数字故障信息; 寄存器用于存储故障信息; 用于基于故障信息识别故障状况的逻辑; 以及用于将故障状况传达给微处理器单元的通信模块。 爆管诊断电路可以包括节点电压诊断电路，USD和/或LSD开路/短路，USD和/或LSD驱动器故障诊断电路，点火爆管短路诊断电路和/或引爆电阻诊断电路。