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    MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION
    1.
    发明申请
    MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION 审中-公开
    具有低饱和磁化的磁性元件

    公开(公告)号：WO2009026249A1

    公开(公告)日：2009-02-26

    申请号：PCT/US2008/073512

    申请日：2008-08-18

    Applicant: GRANDIS INC. ,  RENESAS TECHNOLOGY CORP. ,  NAGAI, Hide ,  DIAO, Zhitao ,  HUAI, Yiming

    Inventor： NAGAI, Hide ,  DIAO, Zhitao ,  HUAI, Yiming

    IPC: G11C11/15 ,  G11B5/127

    CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659

    Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer includes a low saturation magnetization material.

    Abstract translation: 描述包括磁性元件的磁性装置。 磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。 当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。 自由层包括低饱和磁化材料。

    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZING SPIN TRANSFER
    2.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZING SPIN TRANSFER 审中-公开

    公开(公告)号：WO2007143393A3

    公开(公告)日：2007-12-13

    申请号：PCT/US2007/069558

    申请日：2007-05-23

    Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  LUO, Xiao ,  CHEN, Eugene, Youjun ,  WANG, Lien-Chang ,  HUAI, Yiming

    Inventor： LUO, Xiao ,  CHEN, Eugene, Youjun ,  WANG, Lien-Chang ,  HUAI, Yiming

    IPC: G11C11/00

    Abstract: A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.

    CURRENT DRIVEN SWITCHING OF MAGNETIC STORAGE CELLS UTILIZING SPIN TRANSFER AND MAGNETIC MEMORIES USING SUCH CELLS HAVING ENHANCED READ AND WRITE MARGINS
    3.
    发明申请
    CURRENT DRIVEN SWITCHING OF MAGNETIC STORAGE CELLS UTILIZING SPIN TRANSFER AND MAGNETIC MEMORIES USING SUCH CELLS HAVING ENHANCED READ AND WRITE MARGINS 审中-公开
    使用具有增强读取和写入标志的这种细胞的磁性转移和磁性记忆的磁性存储细胞的当前驱动切换

    公开(公告)号：WO2008002813A2

    公开(公告)日：2008-01-03

    申请号：PCT/US2007/071710

    申请日：2007-06-20

    Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  CHEN, Eugene, Youjun ,  HUAI, Yiming ,  PANCHULA, Alex, Fischer ,  WANG, Lien-Chang ,  LUO, Xiao

    Inventor： CHEN, Eugene, Youjun ,  HUAI, Yiming ,  PANCHULA, Alex, Fischer ,  WANG, Lien-Chang ,  LUO, Xiao

    IPC: G11C11/15

    CPC classification number: G11C11/16

    Abstract: A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.

    Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 磁存储器包括阵列中的磁存储单元，位线和源极线。 每个磁存储单元包括至少一个磁性元件。 磁性元件可以通过驱动通过磁性元件的写入电流来编程。 每个磁性元件具有自由和固定的层和主要间隔物。 如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物 如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s） 比最大高电阻状态读取电流除以最小高电阻状态写入电流。

    METHOD AND SYSTEM FOR PROVIDING FIELD BIASED MAGNETIC MEMORY DEVICES
    4.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING FIELD BIASED MAGNETIC MEMORY DEVICES 审中-公开
    用于提供现场偏磁磁记录装置的方法和系统

    公开(公告)号：WO2008118942A1

    公开(公告)日：2008-10-02

    申请号：PCT/US2008/058231

    申请日：2008-03-26

    Applicant: GRANDIS INC. ,  RENESAS TECHNOLOGY CORP.

    Inventor： DIAO, Zhitao ,  WANG, Lien-Chang ,  HUAI, Yiming

    IPC: G11C11/15

    CPC classification number: G11C11/16 ,  Y10T29/49002

    Abstract: A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.

    Abstract translation: 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括在阵列，多个位线以及至少一个偏置结构中提供多个磁存储单元。 多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件，并且可由通过磁性元件驱动的至少一个写入电流来编程。 多个位线对应于多个磁存储单元。 所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。 所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。

    METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY
    8.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY 审中-公开

    公开(公告)号：WO2006063007A3

    公开(公告)日：2006-06-15

    申请号：PCT/US2005/044180

    申请日：2005-12-06

    Applicant: GRANDIS, INC. ,  PAKALA, Mahendra ,  VALET, Thierry ,  HUAI, Yiming ,  DIAO, Zhitao

    Inventor： PAKALA, Mahendra ,  VALET, Thierry ,  HUAI, Yiming ,  DIAO, Zhitao

    IPC: H01L21/00

    Abstract: A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

    MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING AND STORING MULTIPLE BITS
    9.
    发明授权
    MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING AND STORING MULTIPLE BITS 有权
    与自旋转移交接和保管多位磁存储元件

    公开(公告)号：EP1658614B1

    公开(公告)日：2008-08-13

    申请号：EP04782234.1

    申请日：2004-08-24

    Applicant: Grandis, Inc.

    Inventor： NGUYEN, Paul, P. ,  HUAI, Yiming

    IPC: G11C11/15 ,  G11C11/16

    CPC classification number: G11C11/16 ,  B82Y25/00 ,  G11C11/5607 ,  H01F10/3263 ,  H01L43/08

    Abstract: A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

    MAGNETIC ELEMENT UTILIZING SPIN TRANSFER AND AN MRAM DEVICE USING THE MAGNETIC ELEMENT
    10.
    发明授权
    MAGNETIC ELEMENT UTILIZING SPIN TRANSFER AND AN MRAM DEVICE USING THE MAGNETIC ELEMENT 有权
    自旋转移和MRAM分量与磁性元件磁性元件

    公开(公告)号：EP1552526B1

    公开(公告)日：2006-10-18

    申请号：EP03767253.2

    申请日：2003-08-06

    Applicant: Grandis, Inc.

    Inventor： HUAI, Yiming ,  NGUYEN, Paul, P.

    IPC: G11C11/15 ,  G11C11/16

    CPC classification number: H01F10/3263 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/302

    Abstract: A method and system for providing a magnetic element (100) capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element (100) are disclosed. The magnetic element (100) includes a first ferromagnetic pinned layer (104), a nonmagnetic spacer layer (106), a ferromagnetic free layer (108), an insulating barrier layer (110) and a second ferromagnetic pinned layer (112). The pinned layer (104) has a magnetization pinned in a first direction. The nonmagnetic spacer layer (106) is conductive and is between the first pinned layer (104) and the free layer (108). The barrier layer (110) resides between the free layer (108) and the second pinned layer (112) and is an insulator having a thickness allowing o electron tunneling through the barrier layer (110). The second pinned laye (112) has a magnetization pinned in a second direction. The magnetic element (100) is configured to allow the magnetization of the free layer (108) to change direction due to spin transfer when a write current is passed through the magnetic element (100).

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