中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

29 records (took 0.02 seconds)

    Temperature compensation rc oscillator signal processing asic using source bulk voltage of the Mosfet
    3.
    发明专利
    Temperature compensation rc oscillator signal processing asic using source bulk voltage of the Mosfet 审中-公开

    公开(公告)号：JP2013504263A

    公开(公告)日：2013-02-04

    申请号：JP2012528064

    申请日：2010-09-02

    Applicant: エス3シー インコーポレイテッドS3C Inc.

    Inventor： シュ，ツィーネン

    IPC: H03K3/354 ,  H03B5/20 ,  H03K4/501

    CPC classification number: H03L1/022 ,  H03K3/011 ,  H03K3/03 ,  H03K3/354 ,  H03K4/502

    Abstract: A temperature compensated CMOS RC oscillator circuit changes the source-bulk voltage to stabilize the MOSFET's threshold voltage variation over temperature using a resistor and temperature-correlated bias current. The MOSFET's source is connected to ground through a resistor. This temperature-correlated bias current also runs through this resistor. When temperature increases, the bias current also increases, which increases the MOSFET's source-bulk voltage. The increased source-bulk voltage helps to stabilize the threshold voltage of MOSFET at high temperature. A power saving logic is also embedded in this oscillator to achieve higher frequency at lower power consumption. In the present invention, there is no high gain op amp or high speed comparator, which makes the resultant oscillator to be low power design and which can be integrated into a single chip with other system.

    Smart diagnosis and protection circuits for ASIC wiring fault conditions
    7.
    发明授权
    Smart diagnosis and protection circuits for ASIC wiring fault conditions 有权
    智能诊断和保护电路，用于ASIC接线故障条件

    公开(公告)号：US09054517B1

    公开(公告)日：2015-06-09

    申请号：US13829532

    申请日：2013-03-14

    Applicant: S3C, Inc.

    Inventor： Zhineng Zhu

    IPC: H02H3/00 ,  H02H9/04

    CPC classification number: H02H9/04 ,  H02H11/003 ,  H02H11/006

    Abstract: An application specific integrated circuit (ASIC) is disclosed. The ASIC comprises an internal circuit coupled between a power line and ground and an output buffer coupled to the internal circuit; wherein the output buffer provides an output signal. The ASIC includes a fault detection circuit coupled between the power line and ground; and a first protection block configured to receive a first control signal from the fault detection circuit. The first switch is coupled to the power line, the output buffer and the internal circuit. The first protection block prevents current from flowing between the power line and ground when a fault condition is detected. The ASIC further includes a second protection block configured to receive a second control signal from the fault detection circuit, wherein the second protection block is coupled to the output signal, the power line and ground. The second protection block prevents current from flowing between the power line and ground or the power line and the output line when a fault condition is detected.

    Abstract translation: 公开了专用集成电路（ASIC）。 ASIC包括耦合在电力线和地之间的内部电路和耦合到内部电路的输出缓冲器; 其中所述输出缓冲器提供输出信号。 ASIC包括耦合在电力线和地之间的故障检测电路; 以及被配置为从故障检测电路接收第一控制信号的第一保护块。 第一个开关耦合到电源线，输出缓冲器和内部电路。 当检测到故障条件时，第一个保护块防止电流在电源线和地之间流动。 ASIC还包括被配置为从故障检测电路接收第二控制信号的第二保护块，其中第二保护块耦合到输出信号，电力线和地。 当检测到故障条件时，第二保护模块防止电流在电源线与地之间或电源线和输出线之间流动。

    MEDIA-COMPATIBLE ELECTRICALLY ISOLATED PRESSURE SENSOR FOR HIGH TEMPERATURE APPLICATIONS
    8.
    发明申请
    MEDIA-COMPATIBLE ELECTRICALLY ISOLATED PRESSURE SENSOR FOR HIGH TEMPERATURE APPLICATIONS 审中-公开
    适用于高温应用的媒体兼容电力隔离传感器

    公开(公告)号：WO2010101986A8

    公开(公告)日：2011-03-31

    申请号：PCT/US2010026024

    申请日：2010-03-03

    Applicant: S3C INC ,  SUMINTO JAMES TJANMENG ,  YUNUS MOHAMMAD

    Inventor： SUMINTO JAMES TJANMENG ,  YUNUS MOHAMMAD

    IPC: G01L9/06

    CPC classification number: B81C1/00158 ,  G01L9/0042 ,  G01L9/0055 ,  G01L19/147

    Abstract: A pressure sensor is described with sensing elements electrically and physically isolated from a pressurized medium. An absolute pressure sensor has a reference cavity, which can be at a vacuum or zero pressure, enclosing the sensing elements. The reference cavity is formed by bonding a recessed cap wafer with a gauge wafer having a micromachined diaphragm. Sensing elements are disposed on a first side of the diaphragm. The pressurized medium accesses a second side of the diaphragm opposite to the first side where the sensing elements are disposed. A spacer wafer may be used for structural support and stress relief of the gauge wafer. In one embodiment, vertical through-wafer conductive vias are used to bring out electrical connections from the sensing elements to outside the reference cavity. In an alternative embodiment, peripheral bond pads on the gauge wafer are used to bring out electrical connections from the sensing elements to outside the reference cavity

    Abstract translation: 描述了一种压力传感器，其具有与加压介质电气和物理隔离的感测元件。 绝对压力传感器具有可以处于真空或零压力的参考腔，包围感测元件。 参考空腔通过将具有微加工膜片的规格晶片与凹形盖晶片结合而形成。 感测元件设置在隔膜的第一侧上。 加压介质访问隔膜的与传感元件设置的第一侧相对的第二侧。 间隔晶片可用于测量晶片的结构支撑和应力释放。 在一个实施例中，垂直透晶片导电通孔用于引出从感测元件到参考腔外部的电连接。 在替代实施例中，测量晶片上的外围接合焊盘用于引出从感测元件到参考腔外部的电连接

    SYSTEM AND METHOD FOR MINIMIZING DEFLECTION OF A MEMBRANE OF AN ABSOLUTE PRESSURE SENSOR
    9.
    发明申请
    SYSTEM AND METHOD FOR MINIMIZING DEFLECTION OF A MEMBRANE OF AN ABSOLUTE PRESSURE SENSOR 审中-公开
    用于最小化绝对压力传感器的膜的偏移的系统和方法

    公开(公告)号：WO2011140140A1

    公开(公告)日：2011-11-10

    申请号：PCT/US2011/035062

    申请日：2011-05-03

    Applicant: S3C, INC. ,  HUSSAIN, Javed ,  YUNUS, Mohammad ,  SUMINTO, James, T.

    Inventor： HUSSAIN, Javed ,  YUNUS, Mohammad ,  SUMINTO, James, T.

    IPC: G01L9/00

    CPC classification number: B81B7/0058 ,  B81C1/00888 ,  B81C2201/053 ,  G01L9/0055 ,  H01L21/78

    Abstract: A Micro-Electro-Mechanical System (MEMS) pressure sensor is disclosed, comprising a gauge wafer, comprising a micromachined structure comprising a membrane region and a pedestal region, wherein a first surface of the micromachined structure is configured to be exposed to a pressure medium that exerts a pressure resulting in a deflection of the membrane region. The gauge wafer also comprises a plurality of sensing elements patterned on the electrical insulation layer on a second surface in the membrane region, wherein a thermal expansion coefficient of the material of the sensing elements substantially matches with a thermal expansion coefficient of the material of the gauge wafer. The pressure sensor comprises a cap wafer coupled to the gauge wafer, which includes a recess on an inner surface of the cap wafer facing the gauge wafer that defines a sealed reference cavity that encloses and prevents exposure of the sensing elements to an external environment.

    Abstract translation: 公开了一种微机电系统（MEMS）压力传感器，其包括量规晶片，其包括微加工结构，其包括膜区域和基座区域，其中微机械加工结构的第一表面被配置为暴露于压力介质 其施加导致膜区域偏转的压力。 测量晶片还包括在膜区域中的第二表面上在电绝缘层上图案化的多个感测元件，其中感测元件的材料的热膨胀系数基本上与量规材料的热膨胀系数相匹配 晶圆。 压力传感器包括联接到量规晶片的盖子晶片，其包括位于盖晶片的内表面上的面向量规晶片的凹槽，该凹槽限定密封的参考腔，其封闭并防止感测元件暴露于外部环境。

    A TEMPERATURE COMPENSATED RC OSCILLATOR FOR SIGNAL CONDITIONING ASIC USING SOURCE BULK VOLTAGE OF MOSFET
    10.
    发明申请
    A TEMPERATURE COMPENSATED RC OSCILLATOR FOR SIGNAL CONDITIONING ASIC USING SOURCE BULK VOLTAGE OF MOSFET 审中-公开
    用于信号调节ASIC的温度补偿RC振荡器使用MOSFET的源极电压

    公开(公告)号：WO2011028946A1

    公开(公告)日：2011-03-10

    申请号：PCT/US2010/047735

    申请日：2010-09-02

    Applicant: S3C INC. ,  ZHU, Zhineng

    Inventor： ZHU, Zhineng

    IPC: G05F1/10

    CPC classification number: H03L1/022 ,  H03K3/011 ,  H03K3/03 ,  H03K3/354 ,  H03K4/502

    Abstract: A temperature compensated CMOS RC oscillator circuit changes the source- bulk voltage to stabilize the MOSFET's threshold voltage variation over temperature using a resistor and temperature-correlated bias current. The MOSFET's source is connected to ground through a resistor. This temperature-correlated bias current also runs through this resistor. When temperature increases, the bias current also increases, which increases the MOSFET's source-bulk voltage. The increased source-bulk voltage helps to stabilize the threshold voltage of MOSFET at high temperature. A power saving logic is also embedded in this oscillator to achieve higher frequency at lower power consumption. In the present invention, there is no high gain op amp or high speed comparator, which makes the resultant oscillator to be low power design and which can be integrated into a single chip with other system.

    Abstract translation: 温度补偿CMOS RC振荡器电路使用电阻和温度相关偏置电流来改变源 - 体电压，以稳定MOSFET的温度阈值电压变化。 MOSFET的源极通过电阻连接到地。 该温度相关偏置电流也通过该电阻。 当温度升高时，偏置电流也会增加，从而增加了MOSFET的源 - 体电压。 增加的源体电压有助于在高温下稳定MOSFET的阈值电压。 该振荡器中也嵌入节能逻辑，以在较低的功耗下实现更高的频率。 在本发明中，没有高增益运算放大器或高速比较器，这使得所得到的振荡器具有低功率设计，并且可以与其它系统集成到单个芯片中。

Patent Agency Ranking