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1.发明申请FIELD EMISSION ELECTRODE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE 审中-公开场发射电极，其制造方法和电子器件
公开(公告)号：WO2006057459A3
公开(公告)日：2006-12-14
申请号：PCT/JP2005022244
申请日：2005-11-28
Applicant: KOCHI IND PROMOTION CT , CASIO COMPUTER CO LTD , NISHIMURA KAZUHITO , SASAOKA HIDEKI
Inventor： NISHIMURA KAZUHITO , SASAOKA HIDEKI
IPC: H01J1/304
CPC classification number: H01J1/3048 , H01J2201/30457
Abstract: An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5nm to 10nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.
Abstract translation: 在基板上形成具有X射线衍射中的金刚石图案并由多个粒径为5nm〜10nm的金刚石细晶粒形成的电子发射膜。 当电子发射膜导致发射电流流动时，电子发射膜可以将场强限制在低水平，并且具有均匀的电子发射特性。
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2.发明申请FIELD EMISSION ELECTRODE, MANUFACTURING MEHTOD THEREOF, AND ELECTRONIC DEVICE 审中-公开现场排放电极，其制造方法及电子设备
公开(公告)号：WO2006057459A2
公开(公告)日：2006-06-01
申请号：PCT/JP2005/022244
申请日：2005-11-28
Applicant: KOCHI INDUSTRIAL PROMOTION CENTER , CASIO COMPUTER CO., LTD. , NISHIMURA, Kazuhito , SASAOKA, Hideki
Inventor： NISHIMURA, Kazuhito , SASAOKA, Hideki
IPC: H01J1/304
CPC classification number: H01J1/3048 , H01J2201/30457
Abstract: An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5nm to 10nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.
Abstract translation: 在基板上形成具有X射线衍射中的金刚石图案并由多个粒径为5nm〜10nm的金刚石细晶粒形成的电子发射膜。 当电子发射膜导致发射电流流动时，电子发射膜可以将场强限制在低水平，并且具有均匀的电子发射特性。
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