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公开(公告)号：JP2014056572A
公开(公告)日：2014-03-27
申请号：JP2013173963
申请日：2013-08-23
Applicant: Sharp Laboratories Of America Inc , シャープ ラボラトリーズ オブ アメリカ, インコーポレイテッドSharp Laboratories of America, Inc.
Inventor： XU XINYU , PETRUS J L VAN BEEK , YUAN CHANG
CPC classification number: G06K9/48 , G06K9/3275 , G06K9/4642
Abstract: PROBLEM TO BE SOLVED: To provide a computationally efficient edge based matching technique.SOLUTION: A system for image processing includes determining edge pixels of a model image using an edge based technique and determining an angular orientation for each the edge pixels of the model image. The system determines a histogram of gradient orientations on the basis of the angular orientations of the model image. The system determines edge pixels of an input image using an edge based technique and determines an angular orientation for each of the edge pixels of the input image. The system determines a histogram of gradient orientations on the basis of the angular orientations of the input image. The system compares the histogram of gradient orientations of the model image with the histogram of gradient orientations of the input image to determine candidate locations of an object within the input image.
Abstract translation: 要解决的问题：提供基于计算的边缘匹配技术。解决方案：用于图像处理的系统包括使用基于边缘的技术来确定模型图像的边缘像素，并且确定模型图像的每个边缘像素的角度取向。 该系统基于模型图像的角度取向来确定梯度取向的直方图。 该系统使用基于边缘的技术确定输入图像的边缘像素，并确定输入图像的每个边缘像素的角度取向。 该系统基于输入图像的角度取向来确定梯度取向的直方图。 该系统将模型图像的梯度取向的直方图与输入图像的梯度取向的直方图进行比较，以确定输入图像内的对象的候选位置。
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2.发明专利
公开(公告)号：JP2009081458A
公开(公告)日：2009-04-16
申请号：JP2008306873
申请日：2008-12-01
Applicant: Sharp Corp , Sharp Laboratories Of America Inc , シャープ ラボラトリーズ オブ アメリカ, インコーポレイテッドSharp Laboratories of America, Inc. , シャープ株式会社
Inventor： KAWAZOE TOSHIYA , AOKI EIJI , FUJII KATSUMASA , SHIEN TEN SUU
IPC: H01L27/06 , H01L21/822 , H01L21/8238 , H01L27/04 , H01L27/092
Abstract: PROBLEM TO BE SOLVED: To provide an electrostatic discharge protection device for semiconductor integrated circuit which can be formed without adding any special step nor photomask to a manufacturing step even when a silicide step is employed, to provide a method for producing the same, and to provide an electrostatic discharge protection circuit using the electrostatic discharge protection device. SOLUTION: The electrostatic discharge protection device includes: a thyristor; and a trigger diode A for triggering the thyristor into an on state with a low voltage. The diode A includes: an n-type cathode high impurity concentration region 9; a p-type anode high impurity concentration region 8; a gate oxide film 13 formed between the regions 9 and 8 for providing a gate of a MOS transistor of the semiconductor integrated circuit; a polysilicon 14 layered on the oxide film 13; and a gate sidewall insulator 12 provided on a sidewall of the oxide film 13 and a sidewall of the polysilicon 14 for electrically insulating the silicide layer formed on the surface of the region 9 from the silicide layer formed on the surface of the region 8. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 解决的问题：为了提供一种用于半导体集成电路的静电放电保护装置，即使在使用硅化物步骤的情况下也可以在制造步骤中不加任何特殊步骤或光掩模来形成，以提供其制造方法 并且提供使用该静电放电保护装置的静电放电保护电路。
解决方案：静电放电保护装置包括：晶闸管; 以及触发二极管A，用于将晶闸管触发成低电压的导通状态。 二极管A包括：n型阴极高杂质浓度区域9; p型阳极高杂质浓度区域8; 形成在区域9和8之间的用于提供半导体集成电路的MOS晶体管的栅极的栅极氧化膜13; 层叠在氧化膜13上的多晶硅14; 以及设置在氧化膜13的侧壁和多晶硅14的侧壁上的栅极侧壁绝缘体12，用于将形成在区域9的表面上的硅化物层与形成在区域8的表面上的硅化物层电绝缘。 P>版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2008500791A
公开(公告)日：2008-01-10
申请号：JP2007527184
申请日：2004-11-05
Inventor： アヤガリ，ディーパク , チャン，ワイ−チャング
CPC classification number: H04L12/2854 , H04L69/18 , H04L69/24
Abstract: Embodiments of the present invention comprise methods and systems for establishing, managing and transitioning between network coordination modes.
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公开(公告)号：JP4256544B2
公开(公告)日：2009-04-22
申请号：JP23095599
申请日：1999-08-17
IPC: H01L21/8238 , H01L21/332 , H01L21/822 , H01L27/02 , H01L27/04 , H01L27/092 , H01L29/74 , H01L29/866
CPC classification number: H01L27/0262 , H01L27/0248 , H01L27/0259 , H01L29/7412
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公开(公告)号：JP5070189B2
公开(公告)日：2012-11-07
申请号：JP2008306873
申请日：2008-12-01
IPC: H01L27/06 , H01L21/329 , H01L21/332 , H01L21/822 , H01L21/8238 , H01L27/04 , H01L27/092 , H01L29/74 , H01L29/866
Abstract: PROBLEM TO BE SOLVED: To provide an electrostatic discharge protection device for semiconductor integrated circuit which can be formed without adding any special step nor photomask to a manufacturing step even when a silicide step is employed, to provide a method for producing the same, and to provide an electrostatic discharge protection circuit using the electrostatic discharge protection device. SOLUTION: The electrostatic discharge protection device includes: a thyristor; and a trigger diode A for triggering the thyristor into an on state with a low voltage. The diode A includes: an n-type cathode high impurity concentration region 9; a p-type anode high impurity concentration region 8; a gate oxide film 13 formed between the regions 9 and 8 for providing a gate of a MOS transistor of the semiconductor integrated circuit; a polysilicon 14 layered on the oxide film 13; and a gate sidewall insulator 12 provided on a sidewall of the oxide film 13 and a sidewall of the polysilicon 14 for electrically insulating the silicide layer formed on the surface of the region 9 from the silicide layer formed on the surface of the region 8. COPYRIGHT: (C)2009,JPO&INPIT
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Patent Agency Ranking
公开(公告)号：JP3875446B2
公开(公告)日：2007-01-31
申请号：JP2000054746
申请日：2000-02-29
IPC: H01L21/8246 , H01L21/8247 , H01L21/28 , H01L21/3205 , H01L21/8242 , H01L23/58 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/45 , H01L29/788 , H01L29/792
CPC classification number: H01L29/456 , H01L21/28291 , H01L28/55 , H01L28/65
Abstract: A conductive barrier, useful as a ferroelectric capacitor electrode, having high temperature stability has been provided. This conductive barrier permits the use of iridium (Ir) metal in IC processes involving annealing. Separating silicon substrate from Ir film with an intervening, adjacent, tantalum (Ta) film has been found to very effective in suppressing diffusion between layers. The Ir prevents the interdiffusion of oxygen into the silicon during annealing. A Ta or TaN layer prevents the diffusion of Ir into the silicon. This Ir/TaN structure protects the silicon interface so that adhesion, conductance, hillock, and peeling problems are minimized. The use of Ti overlying the Ir/TaN structure also helps prevent hillock formation during annealing. A method of forming a multilayer Ir conductive structure and Ir ferroelectric electrode are also provided.
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7.发明申请
公开(公告)号：WO2020005958A1
公开(公告)日：2020-01-02
申请号：PCT/US2019/039009
申请日：2019-06-25
Applicant: SHARP LABORATORIES OF AMERICA, INC.
Inventor： SUGIYAMA, Edward
Abstract: In a wireless communications network, a system is presented for modifying extended idle-mode Discontinuous Reception (eDRX). The system includes a base station and a wireless terminal/user equipment (UE). A Cellular Internet of Things (CIoT) Core Network (CN) node is also part of the system and includes a Mobility Management Entity (MME) node that receives a downlinked message changing initial UE eDRX parameters to modified UE eDRX parameters, and packages a eDRX change message. The eDRX change message is downlinked to the UE, and the UE replaces the initial eDRX parameters with the modified eDRX parameters in response to the eDRX change message. As a result, the UE and base station are in a connected mode. The modified eDRX parameters may include an eDRX cycle and a Paging Time Window length.
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公开(公告)号：WO2019245881A1
公开(公告)日：2019-12-26
申请号：PCT/US2019/037113
申请日：2019-06-13
Applicant: SHARP LABORATORIES OF AMERICA, INC.
Inventor： SHAHEEN, Kamel, M. , AIBA, Tatsushi , YOKOMAKURA, Kazunari , SUGIYAMA, Masami, Edward , ISHII, Atsushi
Abstract: An access node of a radio access network (RAN) that communicates over a radio interface with a wireless terminal. The access node comprises processor circuitry, transmitting circuitry, and receiving circuitry. The processor circuitry is configured to generate an indication of access node capability to support the wireless terminal when the wireless terminal operates in a restricted mode. The transmitting circuitry is configured to transmit the indication to the wireless terminal. The receiving circuitry is configured to receive an indication from the wireless terminal that the wireless terminal is in the restricted mode. The processor circuitry is further configured to make a determination, upon receipt of the indication from the wireless terminal, that a connection with the wireless terminal can be maintained in the restricted mode and to generate a responsive message based on the determination.
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9.发明申请
公开(公告)号：WO2019217543A2
公开(公告)日：2019-11-14
申请号：PCT/US2019/031302
申请日：2019-05-08
Inventor： AIBA, Tatsushi , YING, Kai , KOWALSKI, John, Michael
IPC: H04L1/18
Abstract: A user equipment (UE) is described. The UE includes receiving circuitry configured to receive a radio resource control (RRC) signal including information used for configuring the UE to monitor physical downlink control channel (PDCCH) candidates either for a downlink control information (DCI) format 0_1 and a DCI format 1_1 or a first DCI format and a second DCI format. The UE also includes transmitting circuitry configured to perform a transmission on a physical uplink shared channel (PUSCH). In a case that the PUSCH is scheduled by using the second DCI format, a first hybrid automatic repeat request-acknowledgment (HARQ-ACK) and a second HARQ-ACK are multiplexed on the PUSCH. The number of resources for the first HARQ-ACK and the number of resources for the second HARQ-ACK are respectively determined.
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公开(公告)号：WO2019160644A1
公开(公告)日：2019-08-22
申请号：PCT/US2019/014032
申请日：2019-01-17
Inventor： YING, Kai , AIBA, Tatsushi , KOWALSKI, John Michael
Abstract: A user equipment (UE) is described. The UE includes receiving circuity configured to receive a radio resource control (RRC) message comprising a first parameter used for configuring a periodicity. The receiving circuitry is also configured to receive a RRC message comprising a second parameter used for configuring a number of repetitions. The UE also includes transmitting circuitry configured to perform, based on the first parameter and the second parameter, repetitions of transmissions of a transport block. The UE is not expected to be configured with the number of repetitions larger than the number of slots within the period.
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