公开(公告)号：WO2011143356A1

公开(公告)日：2011-11-17

申请号：PCT/US2011/036137

申请日：2011-05-11

Applicant: UNIVERSITY OF VIRGINIA PATENT FOUNDATION ,  WOLF, Stuart A. ,  LU, Jiwei ,  STAN, Mircea R.

Inventor： WOLF, Stuart A. ,  LU, Jiwei ,  STAN, Mircea R.

IPC: G11C11/22

CPC classification number: G11C11/14 ,  G11C11/161 ,  G11C11/1675 ,  Y10T29/49069

Abstract: The present invention proposes an electronic memory device comprising a memory line including a memory domain. The memory line may contain a number of memory domains and a number of fixed domains, wherein each memory domain stores a single binary bit value. A multiferroic element may be disposed proximate to each memory domain allowing the magnetization of the memory domain to be changed using a spin torque current, and ensuring the stability of the magnetization of the domain when it is not being written. The domain boundary between the memory domain and one of its adjacent fixed domains may thereby be moved. An antiferromagnetic element may be disposed proximate to each fixed domain to ensure the stability of the magnetization of these. The value of each memory domain may be read by applying a voltage to a magnetic tunnel junction comprising the memory domain and measuring the current flowing through it.

Abstract translation: 本发明提出了一种包括存储器线的电子存储器件，该存储器线包括存储器域。 存储器线可以包含多个存储器域和多个固定域，其中每个存储器域存储单个二进制位值。 可以将多层元件设置在每个存储器域附近，从而允许使用自旋转矩电流来改变存储器域的磁化，并且当未写入时确保该域的磁化的稳定性。 因此，可以移动存储器域与其一个相邻固定域之间的域边界。 反铁磁元件可以设置在每个固定结构域附近，以确保这些磁化的稳定性。 可以通过将电压施加到包括存储器域的磁性隧道结并测量流过它的电流来读取每个存储器域的值。