公开(公告)号：WO2005033655A3

公开(公告)日：2009-04-09

申请号：PCT/US2004029705

申请日：2004-09-10

Applicant: ADVANCED TECH MATERIALS ,  KING MACKENZIE E ,  WANG WEIHUA ,  HAN JIANWEN ,  ROEDER JEFFREY F ,  LURCOTT STEVEN M ,  STAWASZ MICHELE

Inventor： KING MACKENZIE E ,  WANG WEIHUA ,  HAN JIANWEN ,  ROEDER JEFFREY F ,  LURCOTT STEVEN M ,  STAWASZ MICHELE

IPC: G01N27/403 ,  C25D21/12 ,  G01N20060101 ,  G01N27/26

CPC classification number: C25D21/12

Abstract: The present invention relates to an electrode assembly useful for analyzing metal electroplating solutions. Such electrode assembly comprises a measuring electrode, preferably a rotating disc electrode or a microelectrode, and at least one of an in situ cleaning mechanism, a nucleation and metal growth optimization mechanism, and a voltage limiting mechanism. The present invention also relates to usage of such electrode assembly for in situ cleaning of the measuring electrode, nucleation and metal growth optimization, or voltage limitation.

Abstract translation: 本发明涉及一种用于分析金属电镀溶液的电极组件。 这种电极组件包括测量电极，优选旋转圆盘电极或微电极，以及原位清洁机构，成核和金属生长优化机构中的至少一个以及电压限制机构。 本发明还涉及这种电极组件用于测量电极的原位清洗，成核和金属生长优化或电压限制的用途。

公开(公告)号：WO2005033655A2

公开(公告)日：2005-04-14

申请号：PCT/US2004/029705

申请日：2004-09-10

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  KING, Mackenzie, E. ,  WANG, Weihua ,  HAN, Jianwen ,  ROEDER, Jeffrey, F. ,  LURCOTT, Steven, M. ,  STAWASZ, Michele

Inventor： KING, Mackenzie, E. ,  WANG, Weihua ,  HAN, Jianwen ,  ROEDER, Jeffrey, F. ,  LURCOTT, Steven, M. ,  STAWASZ, Michele

IPC: G01N

CPC classification number: C25D21/12

Abstract: The present invention relates to an electrode assembly useful for analyzing metal electroplating solutions. Such electrode assembly comprises a measuring electrode, preferably a rotating disc electrode or a microelectrode, and at least one of an in situ cleaning mechanism, a nucleation and metal growth optimization mechanism, and a voltage limiting mechanism. The present invention also relates to usage of such electrode assembly for in situ cleaning of the measuring electrode, nucleation and metal growth optimization, or voltage limitation.

Abstract translation: 本发明涉及一种用于分析金属电镀溶液的电极组件。 这种电极组件包括测量电极，优选旋转圆盘电极或微电极，以及原位清洁机构，成核和金属生长优化机构中的至少一个以及电压限制机构。 本发明还涉及这种电极组件用于测量电极的原位清洗，成核和金属生长优化或电压限制的用途。

公开(公告)号：WO2006133249A3

公开(公告)日：2009-04-16

申请号：PCT/US2006022037

申请日：2006-06-06

Applicant: ADVANCED TECH MATERIALS ,  DARSILLO MICHAEL ,  WRSCHKA PETER ,  WELCH JAMES ,  GILES JEFFREY ,  STAWASZ MICHELE ,  BOGGS KARL

Inventor： DARSILLO MICHAEL ,  WRSCHKA PETER ,  WELCH JAMES ,  GILES JEFFREY ,  STAWASZ MICHELE ,  BOGGS KARL

IPC: B44C1/22 ,  C23F1/00 ,  C23F1/10 ,  H01L21/302

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09K3/1472 ,  H01L21/3212

Abstract: Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a Step I slurry formulation, which is used to selectively remove and planarize copper, into a Step II slurry formulation, which is used to selectively remove barrier layer material, on a single CMP platen pad.

Abstract translation: 化学机械抛光（CMP）组合物和用于从其上具有其的微电子器件衬底去除铜和阻挡层材料的单CMP压板工艺。 该方法包括将用于选择性地将铜去除和平面化的步骤I浆料制剂原位转化成用于在单个CMP压板垫上选择性除去阻挡层材料的步骤II浆料制剂。

公开(公告)号：WO2006133249A2

公开(公告)日：2006-12-14

申请号：PCT/US2006/022037

申请日：2006-06-06

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  DARSILLO, Michael ,  WRSCHKA, Peter ,  WELCH, James ,  GILES, Jeffrey ,  STAWASZ, Michele ,  BOGGS, Karl

Inventor： DARSILLO, Michael ,  WRSCHKA, Peter ,  WELCH, James ,  GILES, Jeffrey ,  STAWASZ, Michele ,  BOGGS, Karl

IPC: B24B37/04

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09K3/1472 ,  H01L21/3212

Abstract: Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a Step I slurry formulation, which is used to selectively remove and planarize copper, into a Step II slurry formulation, which is used to selectively remove barrier layer material, on a single CMP platen pad.

Abstract translation: 化学机械抛光（CMP）组合物和用于从其上具有其的微电子器件衬底去除铜和阻挡层材料的单CMP压板工艺。 该方法包括将用于选择性地将铜选择性地除去和平面化的步骤I浆料制剂原位转化成用于在单个CMP压板垫上选择性除去阻挡层材料的步骤II浆料制剂。