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    PRECURSOR COMPOSITIONS FOR ALD/CVD OF GROUP II RUTHENATE THIN FILMS
    3.
    发明申请
    PRECURSOR COMPOSITIONS FOR ALD/CVD OF GROUP II RUTHENATE THIN FILMS 审中-公开
    用于II组RUTHENATE薄膜的ALD / CVD的前体组合物

    公开(公告)号：WO2008088563A3

    公开(公告)日：2009-04-09

    申请号：PCT/US2007063831

    申请日：2007-03-12

    Applicant: ADVANCED TECH MATERIALS ,  XU CHONGYING ,  HENDRIX BRYAN C ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  STENDER MATTHIAS ,  CHEN TIANNIU

    Inventor： XU CHONGYING ,  HENDRIX BRYAN C ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  STENDER MATTHIAS ,  CHEN TIANNIU

    IPC: H01L21/44 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/365 ,  H01L21/441

    CPC classification number: C07F17/02

    Abstract: Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO3) thin films, e.g., in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing such precursor compositions in packaged form. Cyclopentadienyl compounds of varied type are described, including cyclopentadienyl as well as non cyclopentadienyl ligands coordinated to ruthenium, strontium or barium central atoms. The precursors of the invention are useful for forming contacts for microelectronic memory device structures, and in a specific aspect for selectively coating copper metallization without deposition on associated dielectric, under deposition conditions in a forming gas ambient.

    Abstract translation: 用于原子层沉积（ALD）和氧化钌氧化物（SrRuO 3）薄膜的化学气相沉积（CVD）的前体组合物，例如在微电子器件的制造中，以及制备和使用这些前体的方法以及前体供应 含有包装形式的前体组合物的体系。 描述了不同类型的环戊二烯基化合物，包括环戊二烯基以及与钌，锶或钡中心原子配位的非环戊二烯基配位体。 本发明的前体可用于形成用于微电子存储器件结构的接触，并且在特定方面，用于在形成气体环境中的沉积条件下，在相关联的电介质上不沉积而选择性地涂覆铜金属化。

    METAL AMINOTROPONIMINATES, BIS-OXAZOLINATES AND GUANIDINATES
    4.
    发明申请
    METAL AMINOTROPONIMINATES, BIS-OXAZOLINATES AND GUANIDINATES 审中-公开
    金属氨基丙酸盐，双氧氮杂环丁烷和胍基

    公开(公告)号：WO2008069821A1

    公开(公告)日：2008-06-12

    申请号：PCT/US2006/062713

    申请日：2006-12-29

    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  CAMERON, Tom ,  XU, Chongying ,  CHEN, Tianniu ,  STENDER, Matthias

    Inventor： CAMERON, Tom ,  XU, Chongying ,  CHEN, Tianniu ,  STENDER, Matthias

    IPC: C07F15/06

    CPC classification number: C07F17/00 ,  C07C279/02 ,  C23C16/409

    Abstract: Metal aminotroponiminates, metal bis-oxazolinates and metal guanidinates are described, as well as ligand precursors of such compounds, and mixed ligand barium and strontium complexes suitable for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes. Such metal compounds are useful in the formation of thin metal films on substrates, e.g., in chemical vapor deposition, atomic layer deposition or rapid vapor deposition processes. The substrates formed have thin film monolayers of the metals provided by the precursors.

    Abstract translation: 本发明描述了金属氨基锑酸盐，金属双恶唑酸盐和金属胍盐，以及这些化合物的配体前体，以及适用于化学气相沉积，原子层沉积和快速气相沉积工艺的混合配体钡和锶络合物。 这种金属化合物可用于在基底上形成薄金属膜，例如在化学气相沉积，原子层沉积或快速气相沉积工艺中。 形成的基材具有由前体提供的金属的薄膜单层。

    PRECURSOR COMPOSITIONS FOR ALD/CVD OF GROUP II RUTHENATE THIN FILMS
    5.
    发明申请
    PRECURSOR COMPOSITIONS FOR ALD/CVD OF GROUP II RUTHENATE THIN FILMS 审中-公开
    用于II组RUTHENATE薄膜的ALD / CVD的前体组合物

    公开(公告)号：WO2008088563A2

    公开(公告)日：2008-07-24

    申请号：PCT/US2007/063831

    申请日：2007-03-12

    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  XU, Chongying ,  HENDRIX, Bryan, C. ,  CAMERON, Thomas, M. ,  ROEDER, Jeffrey, F. ,  STENDER, Matthias ,  CHEN, Tianniu

    Inventor： XU, Chongying ,  HENDRIX, Bryan, C. ,  CAMERON, Thomas, M. ,  ROEDER, Jeffrey, F. ,  STENDER, Matthias ,  CHEN, Tianniu

    IPC: C07F17/00

    CPC classification number: C07F17/02

    Abstract: Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO 3 ) thin films, e.g., in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing such precursor compositions in packaged form. Cyclopentadienyl compounds of varied type are described, including cyclopentadienyl as well as non cyclopentadienyl ligands coordinated to ruthenium, strontium or barium central atoms. The precursors of the invention are useful for forming contacts for microelectronic memory device structures, and in a specific aspect for selectively coating copper metallization without deposition on associated dielectric, under deposition conditions in a forming gas ambient.

    Abstract translation: 用于原子层沉积（ALD）和氧化钌氧化锶（SrR 3 O 3）薄膜的化学气相沉积（CVD）的前体组合物，例如在微电子器件的制造中以及制备方法 并使用这样的前体和含有包装形式的前体组合物的前体供给系统。 描述了不同类型的环戊二烯基化合物，包括环戊二烯基以及与钌，锶或钡中心原子配位的非环戊二烯基配位体。 本发明的前体可用于形成用于微电子存储器件结构的接触，并且在特定方面，用于在形成气体环境中的沉积条件下，在相关联的电介质上不沉积而选择性地涂覆铜金属化。

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