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    PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER
    2.
    发明申请
    PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER 审中-公开
    包含含PNICTIDE的吸收层和发射层之间的电解电容器的光电器件

    公开(公告)号：WO2014058788A1

    公开(公告)日：2014-04-17

    申请号：PCT/US2013/063705

    申请日：2013-10-07

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  FEIST, Rebekah K. ,  DEGROOT, Marty W. ,  STEVENS, James C.

    Inventor： FEIST, Rebekah K. ,  DEGROOT, Marty W. ,  STEVENS, James C.

    IPC: H01L31/032 ,  H01L31/062 ,  H01L31/07 ,  H01L31/072 ,  H01L31/108 ,  H01L31/109

    CPC classification number: H01L31/0296 ,  H01L31/032 ,  H01L31/062 ,  H01L31/07 ,  H01L31/072 ,  H01L31/1085 ,  H01L31/109 ,  H01L31/1828 ,  Y02E10/50

    Abstract: The present invention provides strategies for improving the quality of the insulating layer in MIS and SIS devices in which the insulator layer interfaces with at least one pnictide-containing film. The principles of the present invention are based at least in part on the discovery that very thin (20 nm or less) insulating films comprising a chalcogenide such as i-ZnS are surprisingly superior tunnel barriers in MIS and SIS devices incorporating pnictide semiconductors. In one aspect, the present invention relates to a photovoltaic device, comprising: a semiconductor region comprising at least one pnictide semiconductor; an insulating region electrically coupled to the semiconductor region, wherein the insulating region comprises at least one chalcogenide and has a thickness in the range from 0.5 nm to 20 nm; and a rectifying region electrically coupled to the semiconductor region in a manner such that the insulating region is electrically interposed between the collector region and the semiconductor region.

    Abstract translation: 本发明提供了用于提高MIS和SIS器件中的绝缘层的质量的策略，其中绝缘体层与至少一个含有pnictide的膜接合。 本发明的原理至少部分地基于以下发现：包含诸如i-ZnS之类的硫族化物的非常薄（20nm或更小）的绝缘膜在MIS和包含pnictide半导体的SIS器件中是令人惊讶的优越的隧道势垒。 一方面，本发明涉及一种光伏器件，包括：包含至少一个半导体的半导体区域; 绝缘区域，其电耦合到所述半导体区域，其中所述绝缘区域包括至少一个硫族化物，并且具有在0.5nm至20nm范围内的厚度; 以及整流区域，其以这样的方式电耦合到所述半导体区域，使得所述绝缘区域电插入在所述集电极区域和所述半导体区域之间。

    PROGRAMMABLE STRAIN GAUGE AMPLIFIER
    3.
    发明申请
    PROGRAMMABLE STRAIN GAUGE AMPLIFIER 审中-公开
    可编程应变计放大器

    公开(公告)号：WO2009076564A1

    公开(公告)日：2009-06-18

    申请号：PCT/US2008/086490

    申请日：2008-12-11

    Applicant: MENARD, INC. ,  STEVENS, James, C.

    Inventor： STEVENS, James, C.

    IPC: G01L1/22

    CPC classification number: G01L1/2256

    Abstract: A strain gauge amplifier assembly for operationally connecting between a strain gauge having first and second differential voltage output values and a PC, including a board; an amplifier mounted to the board and configured for electrically connecting with first and second outputs of a strain gauge; a main controller mounted to the board and having data management elements including at least one controller core, a serial port, an A/D converter and an EEPROM, the amplifier being operationally connected with the main controller; a digital potentiometer assembly mounted to the board and operational to adjust at least one of the gain and offset values of the amplifier; and, a port assembly for connecting with a strain gauge and receiving first and second differential voltage values and with an external PC.

    Abstract translation: 一种应变计放大器组件，用于在具有第一和第二差分电压输出值的应变仪和包括板的PC之间可操作地连接; 放大器，其安装到所述板并且被配置为与应变仪的第一和第二输出端电连接; 主控制器，其安装到所述板上并具有包括至少一个控制器核心，串行端口，A / D转换器和EEPROM的数据管理元件，所述放大器与主控制器可操作地连接; 一个数字电位器组件，其安装到该电路板上并可操作以调节放大器的增益和偏移值中的至少一个; 以及用于与应变计连接并接收第一和第二差分电压值以及外部PC的端口组件。

    CRYSTALLIZATION OF POLYPROPYLENE USING A SEMI-CRYSTALLINE, BRANCHED OR COUPLED NUCLEATING AGENT
    10.
    发明申请
    CRYSTALLIZATION OF POLYPROPYLENE USING A SEMI-CRYSTALLINE, BRANCHED OR COUPLED NUCLEATING AGENT 审中-公开
    使用半结晶支化或偶联成核剂结晶聚丙烯

    公开(公告)号：WO2003040095A2

    公开(公告)日：2003-05-15

    申请号：PCT/US2002/035715

    申请日：2002-11-05

    Applicant: DOW GLOBAL TECHNOLOGIES INC. ,  STEVENS, James, C. ,  VANDERLENDE, Daniel, D. ,  ANSEMS, Patricia

    Inventor： STEVENS, James, C. ,  VANDERLENDE, Daniel, D. ,  ANSEMS, Patricia

    IPC: C07D

    CPC classification number: C08J5/18 ,  B32B27/32 ,  C07B2200/11 ,  C07F7/00 ,  C08F4/65904 ,  C08F4/6592 ,  C08F110/06 ,  C08J2323/12 ,  C08J2323/14 ,  C08J2367/02 ,  C08L23/02 ,  C08L23/10 ,  C08L23/12 ,  C08L23/142 ,  C08L23/147 ,  C08L23/16 ,  C08L101/00 ,  C08L2205/02 ,  C08L2314/06 ,  C09K2200/0617 ,  C09K2200/062 ,  C08F4/64144 ,  C08L2666/06 ,  C08L2666/04

    Abstract: A method of nucleating a propylene homo- or copolymer, the method comprising contacting the propylene polymer with a semi-crystalline branched or coupled polymeric nucleating agent under nucleation conditions. In one embodiment, the propylene homopolymer is characterized as having 13C NMR peaks corresponding to a regio-error at about 14.6 and about 15.7 ppm, the peaks of about equal intensity. In another embodiment, the copolymer is characterized as comprising at least about 60 weight percent (wt%) of units derived from propylene, and as having at least one of the following properties: (i) 13 C NMR peaks corresponding to a regio-error at about 14.6 and about 15.7 ppm, the peaks of about equal intensity, (ii) a B-value greater than about 1.4 when the comonomer content, i.e., the units derived from ethylene and/or the unsaturated comonomer(s), of the copolymer is at least about 3 wt%, (iii) a skewness index, Si x , greater than about -1.20, (iv) a DSC curve with a T me that remains essentially the same and a Tmax that decreases as the amount of comonomer, i.e., the units derived from ethylene and/or the unsaturated comonomer(s), in the copolymer is increased, and (v) an X-ray diffraction pattern that reports more gamma-form crystals than a comparable copolymer prepared with a Ziegler-Natta (Z-N) catalyst.

    Abstract translation: 一种使丙烯均聚物或共聚物成核的方法，所述方法包括在成核条件下使所述丙烯聚合物与半结晶支化或偶联聚合物成核剂接触。 在一个实施方案中，丙烯均聚物的特征在于具有对应于约14.6和约15.7ppm的区域误差的13 C NMR峰，约等强度的峰。 在另一个实施方案中，共聚物的特征在于包含至少约60重量％（wt％）的衍生自丙烯的单元，并具有至少一种以下性质：（i）13 C NMR 在约14.6和约15.7ppm处对应于区域误差的峰，约等强度的峰，（ii）当共聚单体含量（即衍生自乙烯和/或不饱和单体的单元）的B值大于约1.4时 （iii）偏度指数Si x大于约-1.20，（iv）具有T 的DSC曲线， 基本上保持相同，并且随着共聚单体的量，即共聚物中衍生自乙烯和/或不饱和共聚单体的单元的量增加，T max降低，以及（v） 报道比用齐格勒 - 纳塔（ZN）催化剂制备的可比较的共聚物更多的γ-型晶体的X-射线衍射图。

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