公开(公告)号：WO2011066491A3

公开(公告)日：2012-03-29

申请号：PCT/US2010058153

申请日：2010-11-29

Applicant: CORNING INC ,  BANKAITIS JONAS ,  MOORE MICHAEL J ,  STONE JEFFERY S ,  WILLIAMSON PAUL J ,  ZHANG CHUNHE

Inventor： BANKAITIS JONAS ,  MOORE MICHAEL J ,  STONE JEFFERY S ,  WILLIAMSON PAUL J ,  ZHANG CHUNHE

IPC: H01L21/304 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/304 ,  H01L21/02021 ,  H01L21/02032 ,  H01L21/30625

Abstract: Methods and apparatus for processing edge portions of a donor semiconductor wafer include controlling chemical mechanical polishing parameters to achieve chamfering of the edges of the donor semiconductor wafer; and alternatively or additionally flexing the donor semiconductor wafer to present a concave configuration, where edge portions thereof are pronounced as compared to a central surface area thereof, such that the pronounced edge portions of the donor semiconductor wafer are preferentially polished against a polishing surface in order to achieve the chamfering.

Abstract translation: 用于处理施主半导体晶片的边缘部分的方法和装置包括控制化学机械抛光参数以实现施主半导体晶片的边缘的倒角; 并且替代地或附加地弯曲施主半导体晶片以呈现凹形结构，其中其边缘部分与其中心表面区域相比更显着，使得施主半导体晶片的显着边缘部分优先按照抛光表面被抛光 实现倒角。

公开(公告)号：WO2011066491A2

公开(公告)日：2011-06-03

申请号：PCT/US2010/058153

申请日：2010-11-29

Applicant: CORNING INCORPORATED ,  BANKAITIS, Jonas ,  MOORE, Michael J. ,  STONE, Jeffery S. ,  WILLIAMSON, Paul J. ,  ZHANG, Chunhe

Inventor： BANKAITIS, Jonas ,  MOORE, Michael J. ,  STONE, Jeffery S. ,  WILLIAMSON, Paul J. ,  ZHANG, Chunhe

IPC: H01L21/304

CPC classification number: H01L21/304 ,  H01L21/02021 ,  H01L21/02032 ,  H01L21/30625

Abstract: Methods and apparatus for processing edge portions of a donor semiconductor wafer include controlling chemical mechanical polishing parameters to achieve chamfering of the edges of the donor semiconductor wafer; and alternatively or additionally flexing the donor semiconductor wafer to present a concave configuration, where edge portions thereof are pronounced as compared to a central surface area thereof, such that the pronounced edge portions of the donor semiconductor wafer are preferentially polished against a polishing surface in order to achieve the chamfering.

Abstract translation: 用于处理施主半导体晶片的边缘部分的方法和装置包括控制化学机械抛光参数以实现施主半导体晶片的边缘的倒角; 并且替代地或附加地弯曲施主半导体晶片以呈现凹形结构，其中其边缘部分与其中心表面区域相比更显着，使得施主半导体晶片的显着边缘部分优先按照抛光表面被抛光 实现倒角。