公开(公告)号：WO2008066884A8

公开(公告)日：2008-06-05

申请号：PCT/US2007/024564

申请日：2007-11-29

Applicant: ADVANCED MICRO DEVICES, INC. ,  STRECK, Christof ,  KAHLERT, Volker

Inventor： STRECK, Christof ,  KAHLERT, Volker

IPC: H01L21/768

Abstract: A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a layer of a dielectric material (210). A recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver (216), possibly encapsulated by rhodium (214), (217).

公开(公告)号：WO2008094669A1

公开(公告)日：2008-08-07

申请号：PCT/US2008/001316

申请日：2008-01-31

Applicant: ADVANCED MICRO DEVICES, INC. ,  STRECK, Christof ,  KAHLERT, Volker

Inventor： STRECK, Christof ,  KAHLERT, Volker

IPC: H01L21/768 ,  H01L21/314

CPC classification number: H01L21/02178 ,  C23C16/303 ,  C23C16/45525 ,  H01L21/0228 ,  H01L21/318 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867

Abstract: By forming an aluminum nitride layer (106) by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.

Abstract translation: 通过自限制工艺顺序形成氮化铝层（106），可以显着提高铜基金属化层的界面特性，同时保持层堆叠的整体介电常数处于较低的水平。

公开(公告)号：WO2008066884A1

公开(公告)日：2008-06-05

申请号：PCT/US2007024564

申请日：2007-11-29

Applicant: ADVANCED MICRO DEVICES INC ,  STRECK CHRISTOF ,  KAHLERT VOLKER

Inventor： STRECK CHRISTOF ,  KAHLERT VOLKER

IPC: H01L21/768

CPC classification number: H01L21/76849 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a layer of a dielectric material (210). A recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver (216), possibly encapsulated by rhodium (214), (217).

Abstract translation: 形成半导体结构的方法包括提供包括电介质材料层（210）的半导体衬底。 在介电材料层中设置凹部。 该凹部填充有可能由铑（214），（217）包封的银（216）的材料。

公开(公告)号：WO2007053381A1

公开(公告)日：2007-05-10

申请号：PCT/US2006/041559

申请日：2006-10-23

Applicant: ADVANCED MICRO DEVICES, INC. ,  STRECK, Christof ,  KAHLERT, Volker ,  HANKE, Alexander

Inventor： STRECK, Christof ,  KAHLERT, Volker ,  HANKE, Alexander

IPC: H01L21/20 ,  H01L21/205

CPC classification number: H01L21/02532 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/0251

Abstract: By incorporating an atomic species of increased covalent radius, which may at least partially substitute germanium, a highly efficient strain mechanism may be provided, in which the risk of stress relief due to germanium conglomeration and lattice defects may be reduced. The atomic species of increased radius, such as tin, may be readily incorporated by epitaxial growth techniques on the basis of tin hydride.

Abstract translation: 通过掺入可以至少部分替代锗的增加的共价半径的原子种类，可以提供高效的应变机理，其中可能降低由于锗聚集和晶格缺陷引起的应力消除的风险。 增加半径的原子物质，如锡，可以通过基于氢化锡的外延生长技术容易地引入。