公开(公告)号：WO2004097909A3

公开(公告)日：2004-11-11

申请号：PCT/US2004/011162

申请日：2004-04-12

Applicant: TOKYO ELECTRON LIMITED ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  PANDA, Siddhartha ,  MOSDEN, Aelan ,  WISE, Rich ,  SUGIYAMA, Kenro ,  CAMILLERI, Joseph, Gregory

Inventor： PANDA, Siddhartha ,  MOSDEN, Aelan ,  WISE, Rich ,  SUGIYAMA, Kenro ,  CAMILLERI, Joseph, Gregory

IPC: H01L21/3065

Abstract: A method and system for deep trench silicon etch is presented. The method comprises introducing a reactive process gas and a Noble gas to a plasma processing system, wherein the reactive process gas comprises two or more of HBr, a fluorine-containing gas, and O 2 , and the Noble gas comprises at least one of He, Ne, Ar, Xe, Kr, and Rn. Additionally, radio frequency (RF) power is applied to the substrate holder, upon which the substrate rests, at two different frequencies. The first RF frequency is greater than 10 MHz, and the second frequency is less than 10 MHz.

公开(公告)号：WO2004097909A2

公开(公告)日：2004-11-11

申请号：PCT/US2004011162

申请日：2004-04-12

Applicant: TOKYO ELECTRON LTD ,  IBM ,  PANDA SIDDHARTHA ,  MOSDEN AELAN ,  WISE RICH ,  SUGIYAMA KENRO ,  CAMILLERI JOSEPH GREGORY

Inventor： PANDA SIDDHARTHA ,  MOSDEN AELAN ,  WISE RICH ,  SUGIYAMA KENRO ,  CAMILLERI JOSEPH GREGORY

IPC: C23C14/00 ,  C23C14/32 ,  H01B13/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/334

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/3065 ,  H01L29/66181

Abstract: A method and system for deep trench silicon etch is presented. The method comprises introducing a reactive process gas and a Noble gas to a plasma processing system, wherein the reactive process gas comprises two or more of HBr, a fluorine-containing gas, and O2, and the Noble gas comprises at least one of He, Ne, Ar, Xe, Kr, and Rn. Additionally, radio frequency (RF) power is applied to the substrate holder, upon which the substrate rests, at two different frequencies. The first RF frequency is greater than 10 MHz, and the second frequency is less than 10 MHz.

Abstract translation: 提出了深沟槽硅蚀刻的方法和系统。 该方法包括将反应性工艺气体和贵重气体引入等离子体处理系统，其中反应性工艺气体包括HBr，含氟气体和O 2中的两种或更多种，并且贵金属气体包括He， Ne，Ar，Xe，Kr和Rn。 此外，射频（RF）功率被施加到衬底搁置的衬底保持器上，处于两个不同的频率。 第一RF频率大于10MHz，第二频率小于10MHz。