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    Method of manufacturing a colorant-added upper dielectric layer for a PDP display
    5.
    发明授权
    Method of manufacturing a colorant-added upper dielectric layer for a PDP display 失效
    制造用于PDP显示器的着色剂添加上电介质层的方法

    公开(公告)号：US07559818B2

    公开(公告)日：2009-07-14

    申请号：US11654634

    申请日：2007-01-18

    Applicant: Sung-Wook Lee

    Inventor： Sung-Wook Lee

    IPC: H01J9/00 ,  C03C17/04 ,  C03C17/02

    CPC classification number: H01J11/12 ,  H01J9/02 ,  H01J11/38 ,  H01J11/44 ,  H01J2211/38 ,  H01J2211/444

    Abstract: A front substrate for a plasma display panel (PDP) and an associated fabrication method are provided. An upper dielectric layer of the front substrate includes a colorant, which causes the dielectric layer to also act as a color filter. The resulting front substrate enhances at least one of color temperature, color purity, and/or contrast without increasing complexity or cost.

    Abstract translation: 提供了一种用于等离子体显示面板（PDP）的前基板和相关的制造方法。 前基板的上电介质层包括着色剂，其使电介质层也用作滤色器。 所得到的前基板增强色温，色纯度和/或对比度中的至少一种，而不增加复杂性或成本。

    Exhaust gas recirculation system of vehicle
    6.
    发明授权
    Exhaust gas recirculation system of vehicle 有权
    车辆废气再循环系统

    公开(公告)号：US07438063B1

    公开(公告)日：2008-10-21

    申请号：US11861441

    申请日：2007-09-26

    Applicant: Youngmin Sohn ,  Wootae Kim ,  Chun Woo Lee ,  Myong Ho Kim ,  Ingee Suh ,  Seung Woo Lee ,  Sung Wook Lee ,  Jin Hong Kim ,  Yong Yun Hwang

    Inventor： Youngmin Sohn ,  Wootae Kim ,  Chun Woo Lee ,  Myong Ho Kim ,  Ingee Suh ,  Seung Woo Lee ,  Sung Wook Lee ,  Jin Hong Kim ,  Yong Yun Hwang

    IPC: F02B47/08 ,  F02B47/10

    CPC classification number: F02B47/08 ,  F02M26/15 ,  F02M26/41 ,  Y02T10/121

    Abstract: An exhaust gas recirculation system. A water jacket in a cylinder block is configured for coolant to flow therein. A cylinder head is attached to the cylinder block. A cylinder is disposed in the cylinder block and the cylinder head. An intake manifold runner is connected to an intake hole of the cylinder. An exhaust manifold runner is connected to an exhaust hole of the cylinder. A first recirculation gas pathway is disposed in the cylinder block, and receives recirculated exhaust gas from the exhaust manifold runner. A second recirculation gas pathway is disposed in the cylinder head, and has a first end connected to the first recirculation gas pathway and a second end connected to the intake manifold runner. A recirculation valve, mounted at the second recirculation gas pathway, controls supply of the recirculated exhaust gas to the intake manifold runner. An engine control unit controls the recirculation valve.

    Abstract translation: 废气再循环系统。 气缸体中的水套被配置为使冷却剂在其中流动。 气缸盖连接到气缸体。 缸体设置在气缸体和气缸盖中。 进气歧管流道连接到气缸的进气孔。 排气歧管流道连接到气缸的排气孔。 第一再循环气体通道设置在气缸体中，并且从排气歧管流道接受再循环废气。 第二再循环气体通道设置在气缸盖中，并且具有连接到第一再循环气体通路的第一端和连接到进气歧管流道的第二端。 安装在第二再循环气体通路处的再循环阀控制再循环废气向进气歧管流道的供应。 发动机控制单元控制再循环阀。

    Etching solution for D-defect evaluation in silicon wafer and evaluation method using the same
    7.
    发明申请
    Etching solution for D-defect evaluation in silicon wafer and evaluation method using the same 审中-公开
    用于硅晶圆缺陷评估的蚀刻方法及其评估方法

    公开(公告)号：US20060144823A1

    公开(公告)日：2006-07-06

    申请号：US11323907

    申请日：2005-12-29

    Applicant: Young-Hun Kim ,  Sung-Wook Lee ,  Young-Chang Park

    Inventor： Young-Hun Kim ,  Sung-Wook Lee ,  Young-Chang Park

    IPC: C23F1/00 ,  C03C15/00 ,  B44C1/22 ,  H01L21/66

    CPC classification number: C09K13/08 ,  G01N1/32 ,  H01L22/12

    Abstract: The present invention relates to an etching solution for evaluating crystal defects of silicon wafers, and more particularly to an etching solution comprising KMnO4 and HF. The etching solution for crystal defect evaluation of a silicon wafer in accordance with the present invention can accurately and quickly evaluate the crystal defects in silicon wafers having specific resistance values of 0.01 Ω·cm or smaller, which previously could only be evaluated by physical methods. Also, the etching solution of the present invention can quickly evaluate a D-defects in silicon wafers having specific resistance values exceeding 0.01 Ω·cm.

    Abstract translation: 本发明涉及一种用于评估硅晶片的晶体缺陷的蚀刻溶液，更具体地涉及包含KMnO 4和HF的蚀刻溶液。 根据本发明的硅晶片的晶体缺陷评估蚀刻溶液可以准确且快速地评估具有0.01Ω·cm或更小的电阻值的硅晶片中的晶体缺陷，其以前只能通过物理方法进行评估。 此外，本发明的蚀刻溶液可以快速评估具有超过0.01Ω·cm的电阻值的硅晶片中的D缺陷。

    Hydrogen production module by integrated reaction/separation process, and hydrogen production reactor using same
    10.
    发明授权
    Hydrogen production module by integrated reaction/separation process, and hydrogen production reactor using same 有权
    氢气生产模块通过综合反应/分离过程，氢气生产反应器采用相同方式

    公开(公告)号：US09452932B2

    公开(公告)日：2016-09-27

    申请号：US14354854

    申请日：2012-08-08

    Applicant: Jong-Soo Park ,  Kyung-Ran Hwang ,  Shin-Kun Ryi ,  Chun-Boo Lee ,  Sung-Wook Lee ,  Jin-Woo Park

    Inventor： Jong-Soo Park ,  Kyung-Ran Hwang ,  Shin-Kun Ryi ,  Chun-Boo Lee ,  Sung-Wook Lee ,  Jin-Woo Park

    IPC: B01J7/00 ,  C01B3/38 ,  B01J19/00 ,  B01J19/24

    CPC classification number: C01B3/38 ,  B01J19/0093 ,  B01J19/249 ,  B01J2219/00783 ,  B01J2219/00835 ,  B01J2219/00844 ,  B01J2219/00873 ,  B01J2219/00907 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2475 ,  B01J2219/2479 ,  C01B2203/0283 ,  C01B2203/041 ,  C01B2203/1058 ,  C01B2203/1241 ,  C01B2203/142

    Abstract: The present invention relates to a hydrogen production module by an integrated reaction/separation process, and a hydrogen production reactor using the same, and more specifically, provides a hydrogen production apparatus which laminates a plurality of layered unit cells, is mounted in a pressure-resistant chamber, and can be operated at a high pressure, wherein the unit cell comprises a first modified catalyst, and a second modified catalyst opposite to a hydrogen separator. The hydrogen production module can produce hydrogen using a hydrocarbon, carbon monoxide and an alcohol as sources. Particularly, all the modified catalysts are formed into a porous metal plate form, thereby maximizing the heat transfer effect necessary for reaction. While a reaction and separation of hydrogen simultaneously occur, separated reactants permeate the first modified catalyst so as to come in contact with the same, and then pass through the gap between the hydrogen separator and the second modified catalyst opposite to each other. Therefore, it is possible to obtain a high efficiency over the equilibrium conversion rate of reaction temperature, and high purity hydrogen can be obtained.

    Abstract translation: 本发明涉及通过一体化反应/分离方法的氢气生产模块和使用该制氢反应器的氢气生产反应器，更具体地说，提供一种将多个分层单元电池层叠的氢制造装置， 并且可以在高压下操作，其中单元电池包括第一改性催化剂和与氢分离器相对的第二改性催化剂。 氢气生产模块可以使用烃，一氧化碳和酒精作为源产生氢。 特别地，所有的改性催化剂形成多孔金属板形式，从而最大化反应所需的传热效果。 同时发生氢的反应和分离，分离的反应物渗入第一改性催化剂以与其接触，然后通过氢分离器和第二改性催化剂彼此相对的间隙。 因此，可以获得比反应温度的平衡转化率高的效率，并且可以获得高纯度的氢。

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