Abstract:
A multi-layer structure in a reaction cell for a diamond growth is provided. The multi-layer structure includes: a diamond seed; a first metal catalyst layer provided on the diamond seed, the first metal catalyst layer containing a first concentration of carbon; a second metal catalyst layer provided on the first metal layer, the second metal catalyst layer containing a second concentration of carbon that is higher than the first concentration; and a carbon source layer provided on the second metal layer.
Abstract:
Disclosed is a method of growing a diamond, including the steps of providing a diamond seed in a reaction chamber; providing a protective layer above the diamond seed; providing a catalyst above the protective layer; providing a carbon source above the catalyst; applying pressure to the reaction chamber; heating the catalyst to a first temperature; holding the first temperature for a first duration; heating the catalyst to a second temperature; and holding the second temperature for a second duration.
Abstract:
A multi-layer structure in a reaction cell for a diamond growth is provided. The multi-layer structure includes: a diamond seed; a first metal catalyst layer provided on the diamond seed, the first metal catalyst layer containing a first concentration of carbon; a second metal catalyst layer provided on the first metal layer, the second metal catalyst layer containing a second concentration of carbon that is higher than the first concentration; and a carbon source layer provided on the second metal layer.
Abstract:
A multi-layer structure in a reaction cell for a diamond growth is provided. The multi-layer structure includes: a diamond seed; a first metal catalyst layer provided on the diamond seed, the first metal catalyst layer containing a first concentration of carbon; a second metal catalyst layer provided on the first metal layer, the second metal catalyst layer containing a second concentration of carbon that is higher than the first concentration; and a carbon source layer provided on the second metal layer.