公开(公告)号：WO2012128891A1

公开(公告)日：2012-09-27

申请号：PCT/US2012/026443

申请日：2012-02-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORP. ,  HU, Guohan ,  NOWAK, Janusz, J. ,  TROUILLOUD, Philip, L. ,  WORLEDGE, Daniel, C.

Inventor： HU, Guohan ,  NOWAK, Janusz, J. ,  TROUILLOUD, Philip, L. ,  WORLEDGE, Daniel, C.

IPC: G11C11/14

CPC classification number: H01L43/12 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08

Abstract: A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier.

Abstract translation: 用于磁性随机存取存储器（MRAM）的磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 形成在自由层上的铁（Fe）除尘层; 形成在除尘层上的绝缘隧道屏障; 以及具有不变磁化方向的磁性固定层，邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间; 其中自由层和固定层具有垂直的磁各向异性并且通过隧道势垒磁耦合。

公开(公告)号：WO2009117228A2

公开(公告)日：2009-09-24

申请号：PCT/US2009/035285

申请日：2009-02-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  ASSEFA, Solomon ,  KANAKASABAPATHY, Sivananda, K. ,  NOWAK, Janusz, Jozef ,  TROUILLOUD, Philip, L.

Inventor： ASSEFA, Solomon ,  KANAKASABAPATHY, Sivananda, K. ,  NOWAK, Janusz, Jozef ,  TROUILLOUD, Philip, L.

IPC: G11C11/16 ,  H01L21/4763

CPC classification number: H01L27/228 ,  G11C11/1659 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

Abstract translation: 介绍了用于屏蔽磁存储单元免受磁场影响的技术。 根据本发明的方面，磁存储元件形成有至少一个导电段，其电耦合到磁存储元件。 导电部分的至少一部分被磁性衬垫包围。 磁性衬垫可操作以将由通过导电段的电流产生的磁场的至少一部分转移离开磁存储元件。

公开(公告)号：WO2009117228A3

公开(公告)日：2009-12-30

申请号：PCT/US2009035285

申请日：2009-02-26

Applicant: IBM ,  ASSEFA SOLOMON ,  KANAKASABAPATHY SIVANANDA K ,  NOWAK JANUSZ JOZEF ,  TROUILLOUD PHILIP L

Inventor： ASSEFA SOLOMON ,  KANAKASABAPATHY SIVANANDA K ,  NOWAK JANUSZ JOZEF ,  TROUILLOUD PHILIP L

IPC: G11C11/00

CPC classification number: H01L27/228 ,  G11C11/1659 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

Abstract translation: 介绍了磁场对磁记忆体进行屏蔽的技术。 根据本发明的方面，磁存储元件形成有至少一个电耦合到磁存储元件的导电段。 导电段的至少一部分被磁性衬垫包围。 磁性衬垫可操作以将由导电段流过的电流产生的磁场的至少一部分转移离开磁存储元件。