公开(公告)号：WO1996042101A1

公开(公告)日：1996-12-27

申请号：PCT/IB1996000573

申请日：1996-06-11

Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE ,  DeHEER, Walter, A. ,  UGARTE, Daniel ,  CHATELAIN, André

Inventor： ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE

IPC: H01J03/02

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J2201/30434

Abstract: The electron source comprises a uniform microscopically flat carbon nanotube film parallel to which and close to which are one or several perforated thin conducting plates, which are electrically insulated from the microscopically flat carbon nanotube film. An electric field at the microscopically flat carbon nanotube film, provided by a voltage applied to the microscopically flat carbon nanotube film and to the conducting plates causes electron emission from the microscopically flat carbon nanotube film by the field emission effect resulting in an electron beam which passes through the perforations in the conducting plates. The electron beam intensity is determined by the electric field at the carbon nanotube film which can be regulated with the voltages applied to perforated thin conducting plates.

Abstract translation: 电子源包括平行的微观平坦的碳纳米管薄膜，并且接近于与微观平坦的碳纳米管薄膜电绝缘的一个或多个穿孔的薄导电板。 通过施加到显微平面碳纳米管膜和导电板上的电压提供的微观平坦碳纳米管膜上的电场通过场发射效应导致来自显微平面碳纳米管膜的电子发射，导致电子束通过 通过导电板中的穿孔。 电子束强度由碳纳米管膜上的电场确定，可以用施加到穿孔的薄导电板上的电压进行调节。