公开(公告)号：WO2005086183A1

公开(公告)日：2005-09-15

申请号：PCT/US2004/003148

申请日：2004-02-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CHEN, Fen ,  CHRISTIANSEN, Cathryn, J. ,  DUFRESNE, Roger, A. ,  LEE, Tom, C. ,  LI, Baozhen ,  STRONG, Alvin, W. ,  WATSON, Kimball, M. ,  WYNNE, Jean, E.

Inventor： CHEN, Fen ,  CHRISTIANSEN, Cathryn, J. ,  DUFRESNE, Roger, A. ,  LEE, Tom, C. ,  LI, Baozhen ,  STRONG, Alvin, W. ,  WATSON, Kimball, M. ,  WYNNE, Jean, E.

IPC: H01C17/22

CPC classification number: H01C17/22

Abstract: A method (300) for trimming resistors (422), and an apparatus (400) for trimming resistors are provided for resistors made of a material whose resistance changes in response to applied voltage. The method comprises measuring (310) the resistance of the resistor. The measured resistance is compared (320) with a target resistance. Based. on the difference (330) between the measured resistance and the target resistance, trimming (340) control parameters (maximum sweep voltage, sweep rate, pulse voltage level, pulse duration, pulse shape) of the applied voltage are calculated. An electric power corresponding to the calculated trimming control parameters is applied across the resistor so as to cause the resistor's resistance to approach the target resistance. The resistor's resistance is measured again and compared with the target resistance. If the difference is not sufficiently small, process described above is repeated until the difference between the measured resistance and the target resistance is less than a pre-specified value.

Abstract translation: 提供了一种用于微调电阻器（422）的方法（300）和用于微调电阻器的装置（400），用于由其电阻响应于施加电压而改变的材料制成的电阻器。 该方法包括测量（310）电阻器的电阻。 将测得的电阻与目标电阻进行比较（320）。 根据。 在测量电阻和目标电阻之间的差（330）上，计算施加电压的修整（340）控制参数（最大扫描电压，扫描速率，脉冲电压电平，脉冲持续时间，脉冲形状）。 对应于计算的微调控制参数的电力施加在电阻器两端，以使电阻器的电阻接近目标电阻。 再次测量电阻的电阻，并与目标电阻进行比较。 如果差异不够小，则重复上述处理，直到测得的电阻和目标电阻之间的差小于预定值。

公开(公告)号：WO2005048304A3

公开(公告)日：2005-07-28

申请号：PCT/US2004036660

申请日：2004-11-04

Applicant: IBM ,  BADAMI DINESH A ,  LEE TOM C ,  LI BAOZHEN ,  MATUSIEWICZ GERALD ,  MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D ,  WATSON KIMBALL M ,  WYNNE JEAN E

Inventor： BADAMI DINESH A ,  LEE TOM C ,  LI BAOZHEN ,  MATUSIEWICZ GERALD ,  MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D ,  WATSON KIMBALL M ,  WYNNE JEAN E

IPC: H01L23/525 ,  H01L27/10 ,  H01L23/58 ,  H01L29/00

CPC classification number: H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

Abstract translation: 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。 熔丝连接在第一电介质层的顶部。 熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方，直接穿过两个通孔。 两个台面各自包括第三自钝化导电材料。 激光熔丝通过将激光束引导到熔丝链来编程。 控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。 这种电阻变化被检测并转换成数字信号。

公开(公告)号：WO2005048304A2

公开(公告)日：2005-05-26

申请号：PCT/US2004/036660

申请日：2004-11-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  BADAMI, Dinesh, A. ,  LEE, Tom, C. ,  LI, Baozhen ,  MATUSIEWICZ, Gerald ,  MOTSIFF, William, T. ,  MUZZY, Christopher, D. ,  WATSON, Kimball, M. ,  WYNNE, Jean, E.

Inventor： BADAMI, Dinesh, A. ,  LEE, Tom, C. ,  LI, Baozhen ,  MATUSIEWICZ, Gerald ,  MOTSIFF, William, T. ,  MUZZY, Christopher, D. ,  WATSON, Kimball, M. ,  WYNNE, Jean, E.

IPC: H01L

CPC classification number: H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

Abstract translation: 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。 熔丝链接在第一介电层的顶部上。 熔丝链路电连接两个通孔并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方并直接位于两个过孔上方。 两个台面均包括第三自钝化导电材料。 激光熔丝通过将激光束引导至熔丝链路进行编程。 控制激光束使得响应于激光束对熔丝链路的影响，熔丝链路的电阻改变但熔丝链路不被熔断。 这种电阻变化被感测并转换成数字信号。

公开(公告)号：WO2010017062A1

公开(公告)日：2010-02-11

申请号：PCT/US2009/051908

申请日：2009-07-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  COLLINS, David, S. ,  JOSEPH, Alvin ,  LINDGREN, Peter, J. ,  STAMPER, Anthony, K. ,  WATSON, Kimball, M.

Inventor： COLLINS, David, S. ,  JOSEPH, Alvin ,  LINDGREN, Peter, J. ,  STAMPER, Anthony, K. ,  WATSON, Kimball, M.

IPC: H01L23/522

CPC classification number: H01L23/522 ,  H01L23/481 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An array of through substrate vias (TSVs) (20) is formed through a semiconductor substrate (12) and a contact- via-level dielectric layer (50) thereupon. A metal-wire-level dielectric layer (60) and a line-level metal wiring structure (80) embedded therein are formed directly on the contact-via-level dielectric layer (50). The line-level metal wiring structure (80) includes cheesing holes that are filled with isolated portions of the metal-wire-level dielectric layer (60). In one embodiment, the entirety of the cheesing holes is located outside the area of the array of the TSVs (20) to maximize the contact area between the TSVs (20) and the line-level metal wiring structure (80). In another embodiment, a set of cheesing holes overlying an entirety of seams (18) in the array of TSVs (20) is formed to prevent trapping of any plating solution in the seams (19)of the TSVs (20) during plating to prevent corrosion of the TSVs (20)at the seams (19).

Abstract translation: 穿过衬底通孔（TSV）（20）的阵列通过半导体衬底（12）和接触通过级介电层（50）在其上形成。 直接在接触通路层电介质层（50）上形成金属线层介电层（60）和嵌入其中的线状金属布线结构（80）。 线状金属布线结构（80）包括填充有金属线层介电层（60）的隔离部分的奶酪孔。 在一个实施例中，整个烘干孔位于TSV（20）阵列的区域的外侧，以最大化TSV（20）和线路级金属布线结构（80）之间的接触面积。 在另一个实施例中，形成了覆盖在TSV（20）阵列中的整个接缝（18）的一组烘干孔，以防止在电镀期间捕获TSV（20）的接缝（19）中的任何电镀溶液以防止 接缝处的TSV（20）的腐蚀（19）。