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    Compuestos de disulfuro para el suministro de agentes farmacéuticos
    1.
    发明专利
    Compuestos de disulfuro para el suministro de agentes farmacéuticos 未知

    公开(公告)号：ES2859923T3

    公开(公告)日：2021-10-04

    申请号：ES14757096

    申请日：2014-02-28

    Applicant: UNIV TUFTS ,  XU QIAOBING ,  WANG MING

    Inventor： XU QIAOBING ,  WANG MING

    IPC: C07B45/06 ,  A61K31/70 ,  C07C323/25

    Abstract: Un compuesto de fórmula (I): **(Ver fórmula)** o sales del mismo, en donde **(Ver fórmula)** A, una cabeza hidrófila, es en el que cada uno de Ra, Ra', Ra" y Ra'", independientemente, es H, un radical alifático monovalente C1-C20, un radical heteroalifático monovalente C1-C20, un radical de arilo monovalente o un radical de heteroarilo monovalente; y Z es un radical alifático bivalente C1-C20, un radical heteroalifático bivalente C1-C20, un radical de arilo bivalente o un radical de heteroarilo bivalente; o A se selecciona de las siguientes estructuras: **(Ver fórmula)** B es**(Ver fórmula)** en el que R4, R5, R6, e Y se definen a continuación; cada uno de R1 y R4, independientemente, es un radical alifático bivalente C1-C10, un radical heteroalifático bivalente C1-C10, un radical de arilo bivalente o un radical de heteroarilo bivalente; cada uno de R2 y R5, independientemente, es un radical alifático bivalente C1-C20, un radical heteroalifático bivalente C1-C20, un radical de arilo bivalente o un radical de heteroarilo bivalente; cada uno de R3 y R6, independientemente, es un radical alifático monovalente C1-C20, un radical heteroalifático monovalente C1-C20, un radical de arilo monovalente o un radical de heteroarilo monovalente; cada uno de átomos de carbono; y una cola hidrófoba, y también una cola hidrófoba, tiene de 8 a 24 cada uno de X, un conector, e Y, también un conector, independientemente, es **(Ver fórmula)** en el que cada uno de m, n, p, q y t, independientemente, es de 1-6; W es O, S o NRc; cada uno de L1, L3, L5, L7, y L9, independientemente, es un enlace, O, S o NRd; cada uno de L2, L4, L6, L8, y L10, independientemente, es un enlace, O, S o NRe; y V es ORf, SRg, o NRhRi, siendo cada uno de Rb, Rc, Rd, Re, Rf, Rg, Rh y Ri, independientemente, H, OH, radical oxialifático C1-C10, radical alifático monovalente C1-C10, radical heteroalifático monovalente C1-C10, un radical de arilo monovalente o un radical de heteroarilo monovalente, en donde los radicales de arilo y heteroarilo pueden incluir sustituyentes seleccionados de alquilo C1-C10, alquenilo C2-C10, alquinilo C2-C10, cicloalquilo C3-C20, cicloalquenilo C3-C20, heterocicloalquilo C3-C20, heterocicloalquenilo C3- C20, alcoxilo C1-C10, arilo, ariloxilo, heteroarilo, heteroariloxilo, amino, alquilamino C1-C10, dialquilamino C2-C20, arilamino, diarilamino, alquilsulfonamino C1-C10, arilsulfonamino, alquilimino C1-C10, arilimino, alquilsulfonimino C1-C10, arilsulfonimino, hidroxilo, halo, tio, alquiltio C1-C10, ariltio, alquilsulfonilo C1-C10, arilsulfonilo, acilamino, aminoacilo, aminotioacilo, amido, amidino, guanidina, ureido, tioureido, ciano, nitro, nitroso, azido, acilo, tioacilo, aciloxilo, carboxilo y éster carboxílico, y en donde los radicales alifáticos y heteroalifáticos pueden incluir sustituyentes seleccionados de alquenilo C2-C10, alquinilo C2-C10, cicloalquilo C3-C20, cicloalquenilo C3-C20, heterocicloalquilo C3-C20, heterocicloalquenilo C3-C20, alcoxilo C1-C10, arilo, ariloxilo, heteroarilo, heteroariloxilo, amino, alquilamino C1-C10, dialquilamino C2-C20, arilamino, diarilamino, alquilsulfonamino C1-C10, arilsulfonamino, alquilimino C1-C10, arilimino, alquilsulfonimino C1-C10, arilsulfonimino, hidroxilo, halo, tio, alquiltio C1-C10, ariltio, alquilsulfonilo C1-C10, arilsulfonilo, acilamino, aminoacilo, aminotioacilo, amido, amidino, guanidina, ureido, tioureido, ciano, nitro, nitroso, azido, acilo, tioacilo, aciloxilo, carboxilo y éster carboxílico.

    FABRICATION OF ISOLATED NANOSTRUCTURES AND/OR ARRAYS OF NANOSTRUCTURES
    6.
    发明申请
    FABRICATION OF ISOLATED NANOSTRUCTURES AND/OR ARRAYS OF NANOSTRUCTURES 审中-公开
    分离的纳米结构和/或纳米结构阵列的制造

    公开(公告)号：WO2008018923A2

    公开(公告)日：2008-02-14

    申请号：PCT/US2007/007101

    申请日：2007-03-22

    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  XU, Qiaobing ,  BAO, Jiming ,  CAPASSO, Federico ,  WHITESIDES, George, M.

    Inventor： XU, Qiaobing ,  BAO, Jiming ,  CAPASSO, Federico ,  WHITESIDES, George, M.

    CPC classification number: B81C1/00031 ,  B08B17/065 ,  B82Y20/00 ,  B82Y30/00 ,  G01N21/658 ,  G02B2207/101

    Abstract: Methods for fabricating nanostructures and articles associated therewith are described. In some embodiments, an isolated nanostructure (e.g., a metal nanowire) or an array of nanostructures can be fabricated by depositing a material (e.g., a metal) on a surface having a plurality of protrusions or indentations. At least a portion of the deposited material may be embedded in an encapsulating material, and the encapsulating material can be cut, for instance, to form a thin slice that includes the deposited material at least partially embedded therein. In some instances, the slice can be positioned on a surface in a desired arrangement. The encapsulating material can be removed from the surface to form one or more isolated nanostructures of the deposited material. Advantageously, dimensions of the nanostructures can be controlled to, e.g., 15 run, to form nanostructures having a variety of shapes and geometries (e.g., wires, rings, and cylinders). Nanostructures can also be formed in a variety of materials, including metals, ceramics, and polymers. In addition, nanostructures can also be fabricated over large areas (e.g., greater than 1 mm 2 ). In some cases, these nanostructures are positioned in association with other components, e.g., to form a functional component of a device.

    Abstract translation: 描述了用于制造纳米结构和与其相关的制品的方法。 在一些实施例中，分离的纳米结构（例如金属纳米线）或纳米结构阵列可以通过在具有多个突起或凹陷的表面上沉积材料（例如金属）来制造。 至少一部分沉积材料可以嵌入封装材料中，并且可以切割封装材料，例如以形成包括至少部分嵌入其中的沉积材料的薄片。 在一些情况下，切片可以以期望的布置定位在表面上。 包封材料可从表面去除以形成沉积材料的一个或多个分离的纳米结构。 有利地，可以将纳米结构的尺寸控制为例如15nm，以形成具有各种形状和几何形状（例如线材，环和圆柱体）的纳米结构。 纳米结构也可以用各种材料形成，包括金属，陶瓷和聚合物。 另外，纳米结构也可以在大面积上制造（例如，大于1mm 2）。 在一些情况下，这些纳米结构与其他组分相关联地定位，例如以形成装置的功能组分。

    FABRICATION OF ISOLATED NANOSTRUCTURES AND/OR ARRAYS OF NANOSTRUCTURES
    9.
    发明申请
    FABRICATION OF ISOLATED NANOSTRUCTURES AND/OR ARRAYS OF NANOSTRUCTURES 审中-公开
    隔离纳米结构的制造和/或纳米结构的阵列

    公开(公告)号：WO2008018923A3

    公开(公告)日：2008-07-10

    申请号：PCT/US2007007101

    申请日：2007-03-22

    Applicant: HARVARD COLLEGE ,  XU QIAOBING ,  BAO JIMING ,  CAPASSO FEDERICO ,  WHITESIDES GEORGE M

    Inventor： XU QIAOBING ,  BAO JIMING ,  CAPASSO FEDERICO ,  WHITESIDES GEORGE M

    IPC: G02B5/18

    CPC classification number: B81C1/00031 ,  B08B17/065 ,  B82Y20/00 ,  B82Y30/00 ,  G01N21/658 ,  G02B2207/101

    Abstract: Methods for fabricating nanostructures and articles associated therewith are described. In some embodiments, an isolated nanostructure (e.g., a metal nanowire) or an array of nanostructures can be fabricated by depositing a material (e.g., a metal) on a surface having a plurality of protrusions or indentations. At least a portion of the deposited material may be embedded in an encapsulating material, and the encapsulating material can be cut, for instance, to form a thin slice that includes the deposited material at least partially embedded therein. In some instances, the slice can be positioned on a surface in a desired arrangement. The encapsulating material can be removed from the surface to form one or more isolated nanostructures of the deposited material. Advantageously, dimensions of the nanostructures can be controlled to, e.g., 15 run, to form nanostructures having a variety of shapes and geometries (e.g., wires, rings, and cylinders). Nanostructures can also be formed in a variety of materials, including metals, ceramics, and polymers. In addition, nanostructures can also be fabricated over large areas (e.g., greater than 1 mm 2 ). In some cases, these nanostructures are positioned in association with other components, e.g., to form a functional component of a device.

    Abstract translation: 描述了制造与其相关的纳米结构和制品的方法。 在一些实施方案中，可以通过在具有多个突起或凹陷的表面上沉积材料（例如金属）来制造分离的纳米结构（例如，金属纳米线）或纳米结构阵列。 沉积材料的至少一部分可以嵌入到封装材料中，并且可以切割封装材料，例如，以形成薄片，其包括至少部分地嵌入其中的沉积材料。 在一些情况下，切片可以以期望的布置位于表面上。 封装材料可以从表面去除以形成沉积材料的一个或多个分离的纳米结构。 有利地，纳米结构的尺寸可以被控制为例如15次，以形成具有各种形状和几何形状（例如，线，环和圆柱体）的纳米结构。 纳米结构也可以以各种材料形成，包括金属，陶瓷和聚合物。 此外，纳米结构也可以在大面积上制造（例如，大于1mm 2）。 在一些情况下，这些纳米结构与其它组分相关联地定位，例如以形成器件的功能组件。

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