Abstract:
Liquid is applied and subjected to a heat treatment to form one thin film among an insulating thin film, a silicon thin film and a conductive thin film constituting a TFT. A substrate is spin-coated with the liquid which contains a thin film component and is supplied from the coating liquid storing part (105) of a spin-coater (102). The substrate to which the coating liquid is applied is subjected to a heat treatment by a heat treatment unit (103) to form a coating film on the substrate. If, further, the coating film is subjected to laser annealing, etc., one of the film qualities, crystallinity, denseness and adhesion is improved. If the coating liquid or resist is applied by an ink-jet method, the utilization efficiency of coating liquid can be improved and, further, a patterned coating film can be formed. A thin film device which is low in cost and has a high throughput can be obtained. By manufacturing TFTs with a manufacturing apparatus having the high utilization efficiency of the coating liquid, the initial investment and the cost of a liquid crystal display are significantly reduced.
Abstract:
In a TFT which is provided with a channel area opposed to gate electrodes with a gate insulating film inbetween, a source-drain area connected to the channel area, a source-drain wiring layer which is electrically connected to the source-drain area, and a gate wiring layer which is electrically connected to the gate electrodes on the surface side of a substrate, at least one component composed of a conductive or semiconductor film is provided with an expanded section for radiating heat which is formed by expanding the component itself for improving the heat radiating efficiency of the component.
Abstract:
A display, such as an EL device having little variation in film thickness between pixels, and a color filter are disclosed. Arranged on a substrate are pixels formed by an ink-jet method in regions to be coated and partitioned by banks so formed as to satisfy the formulae a>d/4, d/2 t0, c>(1/2)x(d/b) where a is the width of the banks, c is the height of the banks, b is the width of the regions to be coated, d is the diameter of droplets of a liquid material for forming a thin film, and t0 is the thickness of the thin film. A method of modifying the surface is a method comprising forming banks of an organic martial on an inorganic bank forming surface, and performing a plasma processing under an excessive fluorine condition, or a method comprising performing oxygen gas plasma processing of a substrate having banks formed of an organic material, and then performing fluorine-based gas plasma processing.
Abstract:
A method for forming a thin film comprises repeating the step of forming an affinity bank layer (111-11n) of a material (inorganic material such as SiO2) exhibiting an affinity with a thin film material liquid (130) and the step of forming a nonaffinity bank layer (121-12n) of a material (organic material such as resist) exhibiting a nonaffinity with the thin film material liquid (130) so as to form a bank (110) of alternate affinity bank layers and nonaffinity bank layers, filling the space between the banks with the thin film material liquid (130) by an ink-jet method, and performing heat treatment so as to form thin film layers (131-13n) in order. By performing the steps, the cost necessary for affinity control is reduced, and a multilayer thin film with a uniform thickness is formed.
Abstract:
In forming a thin film transistor (620) whose OFF-current characteristics are improved, the source and drain regions (602 and 603) of low impurity concentration are formed. In this process, all the ions (indicated by arrow Ion-1) of around 80 keV energy produced from a mixed gas (doping gas) containing 5 % PH3 and the rest of H2 gas, are implanted into a polycrystalline silicon film (604) so that the concentration of impurities in a range of 3 x 10 /cm to 1 x 10 /cm in terms of P ions. Then all the ions (indicated by arrow Ion-2) of about 20 keV energy produced from a doping gas of pure hydrogen are implanted into a low concentration region (604a) so that the concentration of impurities is in a range of 1 x 10 /cm to 1 x 10 /cm in terms of H ions. After that, the impurities are activated by thermally treating the low concentration region (604a) in a nitrogen atmosphere at a temperature of approximately 300 DEG C for approximately one hour.
Abstract translation:在形成截止电流特性提高的薄膜晶体管(620)的场合,形成低杂质浓度的源区(602,603)。 在该过程中,将由含有5%PH 3和其余H 2气体的混合气体(掺杂气体)产生的约80keV能量的所有离子(由箭头Ion-1表示)注入到多晶硅膜(604)中, 使得以P +换算为3×10 13 / cm 2至1×10 14 / cm 2范围内的杂质浓度。 然后将由纯氢的掺杂气体产生的约20keV能量的所有离子(由箭头Ion-2表示)注入到低浓度区域(604a)中,使得杂质浓度在1×10 5 14> / cm 2至1×10 15 / cm 2。 之后,通过在约300℃的氮气气氛中热处理低浓度区域(604a)约1小时使杂质活化。
Abstract:
As shown in the figure, on a transparent substrate (209) provided with a matrix array, a black matrix (216) consisting of molybdenum silicide layers (216bb...) is present for each of picture element regions (201bb...). These molybdenum silicide layers (216bb) are insulated and separated from data lines (202a, 202b), gate lines (203a, 203b) and molybdenum silicide layers (216ab, 216ba...) disposed therearound on a boundary region with picture element regions disposed therearound, but, conductively connected to the picture element electrode (206) of the picture element region (201bb). Here, the outermost edges of the molybdenum silicide layer (216bb) and the corresponding outermost edges of the picture element electrode (206) coincide with each other.