公开(公告)号：KR1020000056928A

公开(公告)日：2000-09-15

申请号：KR1019990006690

申请日：1999-02-27

Applicant: (주) 라이트론

Inventor： 김홍만 ,  박기성 ,  김명규

IPC: G01J1/02

CPC classification number: G01J1/08 ,  G01J1/0295 ,  H01L31/105

Abstract: PURPOSE: An optical detector capable of detecting wavelength and optical current simultaneously is provided to measure wavelength of various input light sources and optical current simultaneously by growing a plurality of InGaAsP optical absorption layers having different band gaps to have wider optical absorption wave length band width. CONSTITUTION: An optical detector capable of detecting wavelength and optical current simultaneously includes a plurality of InGaAsP optical absorption layers(10) having different band gaps, a clad layer, a InGaAs optical absorption layer(7) and a clad layer stacked on an electronic InP semiconductor substrate(6) in sequence and an upper hole type resistant contact metal layer(2) additionally contacting the clad layer on the InGaAsP optical absorption layers, so that optical current according to the strength of partial light beams radiated from an optical fiber is measured by the upper hole type resistant contact metal layer and a middle hole type resistant contact metal layer(8) and the wave length of the remaining light beams is measured by the middle hole type resistant contact metal layer and a lower electronic resistant contact metal layer(5).

Abstract translation: 目的：提供同时检测波长和光电流的光学检测器，通过生长具有不同带隙的多个InGaAsP光吸收层同时测量各种输入光源和光电流的波长，以具有更宽的光吸收波长带宽。 构成：能够同时检测波长和光电流的光检测器包括具有不同带隙的多个InGaAsP光吸收层（10），包层，InGaAs光吸收层（7）和堆叠在电子InP上的覆层 半导体衬底（6）以及另外与InGaAsP光吸收层上的覆盖层接触的上孔型电阻接触金属层（2），从而测量根据从光纤辐射的部分光束的强度的光电流 通过上孔型电阻接触金属层和中孔型电阻接触金属层（8），其余光束的波长通过中孔型电阻接触金属层和下电子电阻接触金属层（ 5）。