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公开(公告)号：KR1020110080776A
公开(公告)日：2011-07-13
申请号：KR1020100001176
申请日：2010-01-07
Applicant: (주) 파루
CPC classification number: C01B32/16 , B82Y30/00 , B82Y40/00 , C01P2004/64 , H01L21/02606 , H01L29/0669
Abstract: PURPOSE: A single molecule doped single-walled carbon nanotube and a thin film transistor using the same are provided to increase the characteristic of semiconductor components and reduce the metallic characteristic of the carbon nanotube by opening various single modules of the single-wall carbon nanotube. CONSTITUTION: A single molecule doped single-walled carbon nanotube includes the following: An aqueous dispersing solution containing single-walled carbon nanotube and a surfactant is prepared. A single molecule compound and a doping agent for the metal complex of the single molecule or the mixture of the same are added in the aqueous dispersing solution. A mixing process is implemented at temperature between 40 and 100 degrees Celsius. The doping agent is contained on the inner side of the single-walled carbon nanotube. The single-walled carbon nanotube containing the doping agent is washed.
Abstract translation: 目的：提供单分子掺杂单壁碳纳米管和使用其的薄膜晶体管，以通过打开单壁碳纳米管的各种单个模块来增加半导体组件的特性并降低碳纳米管的金属特性。 构成：单分子掺杂单壁碳纳米管包括以下：制备含有单壁碳纳米管和表面活性剂的水分散溶液。 将单分子化合物和单分子的金属络合物或其混合物的掺杂剂加入到水性分散溶液中。 混合过程在40至100摄氏度之间的温度下进行。 掺杂剂包含在单壁碳纳米管的内侧。 洗涤含有掺杂剂的单壁碳纳米管。
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公开(公告)号：KR101645971B1
公开(公告)日：2016-08-09
申请号：KR1020100001176
申请日：2010-01-07
Applicant: (주) 파루
Abstract: 본발명은단일벽 탄소나노튜브의도핑및 상기도핑된단일벽 탄소나노튜브를이용한박막트랜지스터에관한것으로보다상세하게는단분자가도핑된단일벽 탄소나노튜브의제조방법및 이를이용한박막트랜지스터에관한것으로, 상기본 발명에따른박막트랜지스터는탄소나노튜브가갖고있는금속성분의금속성이감소하고동시에반도체성분의특성이증가되어전하이동도및 전류점멸비가향상된박막트랜지스터로인쇄전자분야에서소자를구축하는데크게기여할것이다.
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