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公开(公告)号：KR101402501B1
公开(公告)日：2014-06-03
申请号：KR1020120016563
申请日：2012-02-17
Applicant: 강릉원주대학교산학협력단
IPC: C01B21/072 , B22F9/00 , H01L21/48
Abstract: 본 발명은 질화알루미늄의 결정입자로 이루어지는 결정조직을 가지며, 4점 구부림 강도는 350 MPa 이상이고, 열전도도가 190 W/m·K 이상인 질화알루미늄 소결체 및 그 제조방법에 관한 것으로, 상기 질화알루미늄 소결체는 소결조제로 산화 이트리아를 사용함으로써, 높은 열전도 특성 및 기계적 특성을 구현할 수 있고, 반도체 기판 등에 활용 가능하다.
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公开(公告)号：KR1020130095112A
公开(公告)日：2013-08-27
申请号：KR1020120016563
申请日：2012-02-17
Applicant: 강릉원주대학교산학협력단
IPC: C01B21/072 , B22F9/00 , H01L21/48
CPC classification number: C01B21/0722 , C01B21/0728 , C01P2006/32 , C01P2006/90 , C04B35/581
Abstract: PURPOSE: An aluminum nitride sintered body using yttria nitrate as a sintering aid, a manufacturing method thereof and a semiconductor substrate including the same realize high thermal conductive and mechanical characteristics and the aluminum nitride sintered body can be used in a semiconductor substrate, etc. CONSTITUTION: A manufacturing method of an aluminum nitride sintered body comprises the steps of: manufacturing an aqueous solution containing yttria nitrate; dispersing and drying aluminum nitride in the manufactured aqueous solution; heat-treating the dried mixture at 300-700°C; and pressurizing and sintering the mixture. [Reference numerals] (AA) First step of producing Y(NO_3)_3·6H_2O solution within 20-30 deg. C; (BB) Second step of depositing, dispersing aluminum nitride in the Y(NO_3)_3·6H_2O solution and drying; (CC) Third step of heat-treating the produced aluminum nitride/yttria mixture at 500 deg. C; (DD) Fourth step of producing aluminum nitride sintered body by using a hot-press
Abstract translation: 目的：使用硝酸钇作为烧结助剂的氮化铝烧结体及其制造方法和包含该氮化铝的半导体基板实现高导热性和机械特性，并且氮化铝烧结体可用于半导体衬底等。 ：氮化铝烧结体的制造方法，其特征在于，包括：制造含有硝酸钇的水溶液; 在制造的水溶液中分散和干燥氮化铝; 在300-700℃下对干燥的混合物进行热处理; 并对混合物进行加压和烧结。 （AA）在20-30度内生成Y（NO 3）3·6H 2 O溶液的第一步骤。 C; （BB）将氮化铝沉淀在Y（NO 3）3·6H 2 O溶液中并进行干燥的第二步骤; （CC）在500度下对所生产的氮化铝/氧化钇混合物进行热处理的第三步骤。 C; （DD）使用热压制造氮化铝烧结体的第四工序
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