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公开(公告)号：KR101094455B1
公开(公告)日：2011-12-15
申请号：KR1020090077125
申请日：2009-08-20
Applicant: 고려대학교 산학협력단
IPC: B82B3/00
Abstract: 본 발명의 일 실시예에 따른 광기전 소자 제작 방법은, 기판 상에 제1 전극 및 제2 전극을 형성하는 단계; 나노와이어 용액을 상기 기판 상에 도포하는 단계; 및 상기 제1 전극 및 상기 제2 전극 사이에 복수의 나노와이어가 배열되도록 상기 제1 전극 및 상기 제2 전극 사이에 교류 신호를 인가하는 단계를 포함한다.
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公开(公告)号：KR1020110019550A
公开(公告)日：2011-02-28
申请号：KR1020090077125
申请日：2009-08-20
Applicant: 고려대학교 산학협력단
IPC: B82B3/00
Abstract: PURPOSE: A photovoltaic device using a nanowire, and a manufacturing method thereof are provided to improve the light power generation efficiency by increasing the density of the nanowire among electrodes. CONSTITUTION: A manufacturing method of a photovoltaic device using a nanowire comprises the following steps; forming first and second electrodes on a substrate(S102); spreading a nanowire solution containing plural nanowires on the substrate(S104); applying an AC signal in between the electrodes for arranging the nanowires(S106); and evaporating liquid portions from the nanowire solution(S108).
Abstract translation: 目的：提供使用纳米线的光电器件及其制造方法，以通过增加电极之间的纳米线的密度来提高发光效率。 构成：使用纳米线的光电器件的制造方法包括以下步骤： 在基板上形成第一和第二电极（S102）; 在衬底上铺展含有多个纳米线的纳米线溶液（S104）; 在所述电极之间施加AC信号以布置所述纳米线（S106）; 并从纳米线溶液中蒸发液体部分（S108）。
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公开(公告)号：KR1020110003614A
公开(公告)日：2011-01-13
申请号：KR1020090060942
申请日：2009-07-06
Applicant: 고려대학교 산학협력단
IPC: B82B3/00
CPC classification number: G01K13/006 , B82Y15/00 , G01R33/035
Abstract: PURPOSE: A method for manufacturing a superconductor sensor using Al nanowire is provided to enable operation at an ultralow temperature and low magnetic field using aluminum nanowire captured through dielectrophoresis as a superconductor. CONSTITUTION: A method for manufacturing a superconductor sensor using Al nanowire comprises the steps of: forming a metal electrode on a semiconductor substrate; applying an aluminum nanowire solution on the metal electrode; and applying AC signaling between the metal electrodes to capture aluminum nanowire(220). The aluminum nanowire is grown to single crystal.
Abstract translation: 目的：提供一种使用Al纳米线制造超导体传感器的方法，可以使用通过介电电泳捕获的铝纳米线作为超导体在超低温和低磁场下运行。 构成：使用Al纳米线制造超导体传感器的方法包括以下步骤：在半导体衬底上形成金属电极; 在金属电极上施加铝纳米线溶液; 以及在所述金属电极之间施加AC信号以捕获铝纳米线（220）。 铝纳米线生长成单晶。
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Patent Agency Ranking
公开(公告)号：KR1020110019551A
公开(公告)日：2011-02-28
申请号：KR1020090077126
申请日：2009-08-20
Applicant: 고려대학교 산학협력단
IPC: H01L29/78 , B82B3/00 , H01L21/336
CPC classification number: H01L21/02603 , H01L21/02225 , H01L29/0669 , H01L29/41725 , H01L29/42312 , H01L29/4232
Abstract: PURPOSE: A method for manufacturing a nano-wire transistor is provided to reduce cost required for manufacturing processes by effectively arranging a plurality of nano-wires between a source electrode and a drain electrode using dielectrophoresis method. CONSTITUTION: A source electrode and a drain electrode are formed on a substrate(S102). A gate electrode is formed between the source electrode and the drain electrode(S104). A gate insulator is formed on the gate electrode(S106). A nano-wire solution including nano-wire is applied on the substrate(S108). An alternating current signal is applied between the source electrode and the drain electrode(S110). The solution of the nano-wire is evaporated(S112).
Abstract translation: 目的：提供一种制造纳米线晶体管的方法，通过使用介电电泳法在源电极和漏极之间有效地布置多根纳米线，从而降低制造工艺所需的成本。 构成：在基板上形成源电极和漏电极（S102）。 在源电极和漏电极之间形成栅电极（S104）。 在栅电极上形成栅极绝缘体（S106）。 将包括纳米线的纳米线溶液施加在基板上（S108）。 在源电极和漏电极之间施加交流信号（S110）。 蒸发纳米线溶液（S112）。
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公开(公告)号：KR1020110003612A
公开(公告)日：2011-01-13
申请号：KR1020090060940
申请日：2009-07-06
Applicant: 고려대학교 산학협력단
IPC: H01L21/336 , H01L29/78 , B82B3/00
CPC classification number: H01L29/42312 , H01L21/02244 , H01L21/02603 , H01L21/2815 , H01L21/32051 , H01L29/78696
Abstract: PURPOSE: A bottom-up gate all-around device and a manufacturing method thereof are provided to reduce power consumption by increasing a ratio between an operating current and a shut-off current and controlling a device through a low operating voltage. CONSTITUTION: A metal electrode(140,150) is formed on a semiconductor substrate. A nanowire channel(130) is formed between the metal electrodes. The nanowire channel is formed into a suspended structure. A gate electrode is formed in the side of the nanowire channel. An electroplated material(160) protects the nanowire channel and the gate electrode.
Abstract translation: 目的：提供自底向上的全能装置及其制造方法，以通过增加工作电流和截止电流之间的比例并通过低工作电压来控制装置来降低功耗。 构成：在半导体衬底上形成金属电极（140,150）。 在金属电极之间形成纳米线通道（130）。 纳米线通道形成悬挂结构。 在纳米线通道的侧面形成栅电极。 电镀材料（160）保护纳米线通道和栅电极。
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公开(公告)号：KR1020100133196A
公开(公告)日：2010-12-21
申请号：KR1020090051956
申请日：2009-06-11
Applicant: 고려대학교 산학협력단
IPC: G03G15/00
Abstract: PURPOSE: A vertical direction printing device is provided to change a paper moving orientation and a printing head moving orientation to a vertical direction, thereby reducing the surfaces which printing device and combination printer occupies. CONSTITUTION: A feeding unit of housing supplies a paper. An outlet of the housing discharges the paper which printing is completed. A printing head performs the printing work to the paper. A carrier shaft(240) moves the printing head to the vertical direction to the bottom surface of the housing. A controller controls operation of the carrier shaft and controls the printing operation of the printing head. A pulley(330) is fixed to the housing. A pulley string(310) connects the printing head and a mass body(230).
Abstract translation: 目的：提供垂直方向打印装置，以便将纸张移动方向和打印头移动方向改变到垂直方向，从而减少打印装置和组合打印机占据的表面。 规定：房屋供应单位供应纸张。 外壳的出口排出完成打印的纸张。 打印头对纸张执行打印作业。 托架轴（240）将打印头移动到与壳体的底面垂直的方向。 控制器控制行星架轴的操作并控制打印头的打印操作。 滑轮（330）固定在壳体上。 滑轮组（310）连接打印头和质量体（230）。
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公开(公告)号：KR101090740B1
公开(公告)日：2011-12-08
申请号：KR1020090060940
申请日：2009-07-06
Applicant: 고려대학교 산학협력단
IPC: H01L21/336 , H01L29/78 , B82B3/00
Abstract: 본발명에따른상향식게이트올 어라운드소자는동작전류와꺼짐전류사이의비를크게할 수있으므로작은동작전압으로소자를제어할수 있고소모전력을감소시킬수 있다는장점이있다.
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公开(公告)号：KR101027975B1
公开(公告)日：2011-04-13
申请号：KR1020090060942
申请日：2009-07-06
Applicant: 고려대학교 산학협력단
IPC: B82B3/00
Abstract: 본 발명은 알루미늄 나노와이어를 이용한 초전도체 센서의 제조방법에 관한 것으로, 보다 상세하게는 상향식 방법으로 제작된 알루미늄 전극위에 알루미늄 나노와이어 용액을 도포하고 두 알루미늄 전극사이에 교류 신호를 인가하여 전기장을 형성하여 알루미늄 나노와이어를 포획하여 초전도체 센서로 동작시킴으로써 온도와 자기장 변화를 측정할 수 있는 알루미늄 나노와이어를 이용한 초전도체 센서의 제조방법에 관한 것이다.
본 발명에 따른 알루미늄 나노와이어를 이용한 초전도체 센서의 제조방법에 의하면 유전영동 방식으로 포획한 알루미늄 나노와이어를 초전도체 센서로 사용함으로써 극저온에서 초전도체 센서로 작동하고, 작은 자기장에서도 저항의 변화가 크기 때문에 저자장 환경에서 시료를 측정할 때 정확한 자기장 값을 측정할 수 있는 장점이 있다.
알루미늄 나노와이어, 초전도체, 유전영동
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