公开(公告)号：KR1020100096847A

公开(公告)日：2010-09-02

申请号：KR1020090015910

申请日：2009-02-25

Applicant: 고려대학교 산학협력단

Inventor： 홍문표 ,  김동우 ,  김두현 ,  김건수

IPC: H01L51/00 ,  H01L29/786

CPC classification number: H01L51/105 ,  H01L51/0516 ,  H01L51/0525 ,  H01L51/0545

Abstract: PURPOSE: An organic thin film transistor and a manufacturing method thereof are provided to improve the property of an organic thin film transistor by minimizing the difference between the work function of an electrode and the energy level of the organic semiconductor. CONSTITUTION: A gate electrode(20) is formed on a substrate. A gate insulating layer(30) is formed on the gate electrode and the substrate. The gate insulating layer is formed through a solution process which uses a solvent-based material with siloxane bonding. A source electrode and a drain electrode(40b) are formed on the gate insulating layer. A carrier injection film is formed on the source electrode and the drain electrode with a forced oxidation method. An organic semiconductor layer, which is overlapped with the gate electrode between the source electrode and the drain electrode, is formed.

Abstract translation: 目的：提供一种有机薄膜晶体管及其制造方法，通过最小化电极的功函数与有机半导体的能级之间的差异来提高有机薄膜晶体管的性能。 构成：在基板上形成栅电极（20）。 在栅电极和基板上形成栅极绝缘层（30）。 栅极绝缘层通过使用具有硅氧烷键合的溶剂基材料的溶液法形成。 源电极和漏电极（40b）形成在栅极绝缘层上。 用强制氧化法在源电极和漏电极上形成载流子注入膜。 形成与源电极和漏电极之间的栅电极重叠的有机半导体层。

公开(公告)号：KR1020110015266A

公开(公告)日：2011-02-15

申请号：KR1020090072903

申请日：2009-08-07

Applicant: 주식회사 동진쎄미켐 ,  고려대학교 산학협력단

Inventor： 이호진 ,  김병욱 ,  김위용 ,  홍문표 ,  김두현

IPC: H01L29/786 ,  H01B3/36

CPC classification number: H01L51/052 ,  H01B3/36

Abstract: PURPOSE: An organic insulation film composition and an organic thin film transistor using the same are provided to reduce hysteresis by forming a gate insulation layer through a low temperature curing process when an organic thin film transistor is driven. CONSTITUTION: An organic insulation film composition includes novolak resin, cross-linking agents, a photoinitiator, and solvents. The organic insulation film composition is coated on a base material and is softly baked. The organic insulation film composition is optically cured by light irradiation and then is thermally processed. A pattern is formed by developing the organic insulation film composition with developers after the light irradiation. An organic thin film transistor includes a gate insulation layer(3), an organic semiconductor layer(6), and an electrode layer.

Abstract translation: 目的：提供有机绝缘膜组合物和使用其的有机薄膜晶体管，以在驱动有机薄膜晶体管时通过低温固化工艺形成栅极绝缘层来减小滞后。 构成：有机绝缘膜组合物包括酚醛清漆树脂，交联剂，光引发剂和溶剂。 将有机绝缘膜组合物涂覆在基材上并轻轻烘烤。 有机绝缘膜组合物通过光照射光学固化，然后进行热处理。 通过在光照射后用显影剂显影有机绝缘膜组合物形成图案。 有机薄膜晶体管包括栅极绝缘层（3），有机半导体层（6）和电极层。

公开(公告)号：KR100993014B1

公开(公告)日：2010-11-08

申请号：KR1020090015909

申请日：2009-02-25

Applicant: 고려대학교 산학협력단

Inventor： 홍문표 ,  김두현 ,  김건수

IPC: H01L29/786

Abstract: 본 발명은 유기 박막 트랜지스터 및 그의 제조 방법에 관한 것이다.
본 발명에서는 기판 위에 게이트 전극을 형성하고, 게이트 전극 및 기판 위에 게이트 절연막을 형성한다. 그리고 게이트 절연막 위에 수송자 주입막과, 상기 수송자 주입막 위에 각각 위치하는 소스 전극 및 드레인 전극을 동시에 형성한다. 그리고 수송자 주입막을 포함하는 소스 전극 및 드레인 전극 사이에 상기 게이트 전극과 중첩되는 유기 반도체 층을 형성한다.
유기박막트랜지스터, 수송자주입막, 금속산화막

公开(公告)号：KR1020110015257A

公开(公告)日：2011-02-15

申请号：KR1020090072890

申请日：2009-08-07

Applicant: 주식회사 동진쎄미켐 ,  고려대학교 산학협력단

Inventor： 이호진 ,  김병욱 ,  김위용 ,  홍문표 ,  김두현

IPC: H01L29/786 ,  H01B3/30

CPC classification number: H01L51/052 ,  H01B3/30

Abstract: PURPOSE: An organic insulation film composition for forming a gate insulation layer and an organic thin film transistor using the same are provided to improve the property of the organic thin film transistor by reducing hysteresis when driving the organic thin film transistor. CONSTITUTION: An organic insulation film composition includes novolak resin, cross-linking agents and solvents. The novolak resin is made by step polymerization. The organic insulation film composition is coated on a base substrate and is thermally processed after soft bake. An organic thin film transistor includes a gate insulation layer(3), an organic semiconductor layer(6), and an electrode layer.

Abstract translation: 目的：提供一种用于形成栅极绝缘层的有机绝缘膜组合物和使用其的有机薄膜晶体管，以通过在驱动有机薄膜晶体管时减小滞后来改善有机薄膜晶体管的性能。 构成：有机绝缘膜组合物包括酚醛清漆树脂，交联剂和溶剂。 酚醛清漆树脂通过步骤聚合制成。 将有机绝缘膜组合物涂布在基底基材上，并在软烘烤后进行热处理。 有机薄膜晶体管包括栅极绝缘层（3），有机半导体层（6）和电极层。

公开(公告)号：KR1020100096846A

公开(公告)日：2010-09-02

申请号：KR1020090015909

申请日：2009-02-25

Applicant: 고려대학교 산학협력단

Inventor： 홍문표 ,  김두현 ,  김건수

IPC: H01L29/786

CPC classification number: H01L51/105 ,  H01L51/0023 ,  H01L51/0545

Abstract: PURPOSE: An organic thin film transistor and a manufacturing method thereof are provided to reduce contact resistance between a source/drain electrode and an organic semiconductor by forming a stepped structured metal oxide layer and a source/drain electrode. CONSTITUTION: A gate electrode(20) is formed on a substrate. A gate insulating layer(30) is formed on the gate electrode and the substrate. A carrier injection layer, a source electrode, and a drain electrode are simultaneously formed on the gate insulating layer. An organic semiconductor layer(60), which is overlapped with the gate electrode between the source electrode and the drain electrode, is formed. The carrier injection layer is overlapped with two edges of the gate electrode and is formed in an island form.

Abstract translation: 目的：提供一种有机薄膜晶体管及其制造方法，以通过形成阶梯状结构的金属氧化物层和源极/漏极来减小源极/漏极和有机半导体之间的接触电阻。 构成：在基板上形成栅电极（20）。 在栅电极和基板上形成栅极绝缘层（30）。 在栅极绝缘层上同时形成载流子注入层，源电极和漏电极。 形成与源电极和漏电极之间的栅电极重叠的有机半导体层（60）。 载流子注入层与栅电极的两个边缘重叠并形成为岛状。