公开(公告)号：KR1020120027799A

公开(公告)日：2012-03-22

申请号：KR1020100089587

申请日：2010-09-13

Applicant: 고려대학교 산학협력단

Inventor： 김지현 ,  김홍렬

IPC: H01L21/335 ,  H01L29/76

Abstract: PURPOSE: A method for enhancing electrical features of a semiconductor device of a hetero structure is provided to irradiate a proton on the rear side of a substrate, thereby enhancing performance of the semiconductor device. CONSTITUTION: A semiconductor device of a hetero structure includes a crystal layer growing on a substrate. A proton is irradiated on the rear side of the substrate. Crystal layers are selected by groups made of ZnO, GaAs, GaP, and GaN. The substrate is selected by groups made of Si, SiC, GaAs, and a sapphire substrate.

Abstract translation: 目的：提供一种用于增强异质结构的半导体器件的电特征的方法，用于照射衬底背面的质子，从而提高半导体器件的性能。 构成：异质结构的半导体器件包括在衬底上生长的晶体层。 在基板的背面照射质子。 晶体层由ZnO，GaAs，GaP和GaN制成的组选择。 衬底由Si，SiC，GaAs和蓝宝石衬底制成的组选择。